Polymer, organic layer composition, organic layer, and method of forming patterns

Patent metadata

Field	Value
Publication number	US-10323124-B2
Application number	US-201514734748-A
Country	US
Kind code	B2
Filing date	Jun 9, 2015
Priority date	Sep 30, 2014
Publication date	Jun 18, 2019
Grant date	Jun 18, 2019

Abstract

The definitions of the Chemical Formula 1 are the same as defined in the detailed description.

First claim

What is claimed is:

1. A polymer comprising a moiety represented by the following Chemical Formula 1:

wherein, in the Chemical Formula 1,
A 1 a divalent group of one of the compounds listed in the following Group 1 such that each of the two valences of A 1 is a bond to a fused ring of A 1 , provided that , when A 1 is

of Group 1, then A 1 is a bound to A 3 by the nitrogen-containing ring of

A 2 is a divalent group of one of the compounds listed in the following Group 1 such that each of the two valences of A 2 is a bond to a fused ring of A 2 ,
A 3 is one of the groups listed in the following Group 2, and
m is 0 or 1:

wherein, in the Group 1,
R 1 , R 2 and R 3 are independently hydrogen, a hydroxy group, oxygen, a methoxy group, an ethoxy group, a halogen, a substituted or unsubstituted C6 to C30 aryl group, or a combination thereof,
Z 1 to Z 6 are independently a hydroxy group, a methoxy group, an ethoxy group, a halogen, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 cycloalkenyl group, a substituted or unsubstituted C1 to C20 alkylamine group, a substituted or unsubstituted C7 to C20 arylalkyl group, a substituted or unsubstituted C1 to C20 heteroalkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, a substituted or unsubstituted C2 to C30 heteroaryl group, a substituted or unsubstituted C1 to C4 alkyl ether group, a substituted or unsubstituted C7 to C20 arylalkylene ether group, a substituted or unsubstituted C1 to C30 haloalkyl group, or a combination thereof, and
a, b, c, d, e and f are independently integers of 0 to 2,

wherein, in the Group 2,
X 1 and X 2 are independently a substituted or unsubstituted C6 to C50 arylene group, a substituted or unsubstituted C1 to C10 alkyleneoxide-containing group, or a combination thereof,
Y 1 and Y 2 are independently a substituted or unsubstituted C6 to C30 aryl group,
Z 7 to Z 10 are independently a hydroxy group, a methoxy group, an ethoxy group, a halogen, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 cycloalkenyl group, a substituted or unsubstituted C1 to C20 alkylamine group, a substituted or unsubstituted C7 to C20 arylalkyl group, a substituted or unsubstituted C1 to C20 heteroalkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, a substituted or unsubstituted C2 to C30 heteroaryl group, a substituted or unsubstituted C1 to C4 alkyl ether group, a substituted or unsubstituted C7 to C20 arylalkylene ether group, a substituted or unsubstituted C1 to C30 haloalkyl group, or a combination thereof, and
g, h, i and j are independently integers of 0 to 2.

2. The polymer as claimed in claim 1 , wherein in the Group 2, X 1 and X 2 are independently a divalent group derived from one of the compounds listed in the following Group 3:

3. The polymer as claimed in claim 1 , wherein, in the Group 2, Y 1 and Y 2 are independently a monovalent group derived from one of the compounds listed in the following Group 3:

4. The polymer as claimed in claim 1 , wherein in the Group 2, at least one of X 2 , Y 1 and Y 2 is a group derived from a substituted or unsubstituted benzene, a substituted or unsubstituted naphthalene, a substituted or unsubstituted biphenyl, a substituted or unsubstituted pyrene, a substituted or unsubstituted perylene, a substituted or unsubstituted benzoperylene, a substituted or unsubstituted coronene, or a combination thereof.

5. The polymer as claimed in claim 1 , wherein, in the Group 1, R 1 , R 2 and R 3 are independently hydrogen, or a substituted or unsubstituted phenyl group.

6. The polymer as claimed in claim 1 , which is represented by one of the following Chemical Formulae:

wherein, in the above Chemical Formulae,
R 4 and R 5 are independently hydrogen, a hydroxy group, oxygen, a halogen, a substituted or unsubstituted C6 to C30 aryl group, or a combination thereof, Z 11 to Z 22 are independently a hydroxy group, a methoxy group, an ethoxy group, a halogen, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 cycloalkenyl group, a substituted or unsubstituted C1 to C20 alkylamine group, a substituted or unsubstituted C7 to C20 arylalkyl group, a substituted or unsubstituted C1 to C20 heteroalkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, a substituted or unsubstituted C2 to C30 heteroaryl group, a substituted or unsubstituted C1 to C4 alkyl ether group, a substituted or unsubstituted C7 to C20 arylalkylene ether group, a substituted or unsubstituted C1 to C30 haloalkyl group, or a combination thereof,
k, l, m, n, o, p, q, r, s, t, u and v are independently integers of 0 to 2, and
n 0 is an integer of 2 to 300.

7. The polymer as claimed in claim 1 , which has a weight average molecular weight of about 1,000 to about 200,000.

8. An organic layer composition comprising
the polymer as claimed in claim 1 , and
a solvent.

9. The organic layer composition as claimed in claim 8 , wherein the polymer is included in an amount of about 0.1 wt % to about 30 wt % based on the total weight of the organic layer composition.

10. An organic layer formed by curing the organic layer composition as claimed in claim 8 .

11. The organic layer as claimed in claim 10 , wherein the organic layer is a hardmask layer.

12. A method of forming patterns, the method comprising:
providing a material layer on a substrate;
applying the organic layer composition as claimed in claim 8 on the material layer;
heat-treating the organic layer composition to form a hardmask layer;
forming a silicon-containing thin layer on the hardmask layer;
forming a photoresist layer on the silicon-containing thin layer;
exposing and developing the photoresist layer to form a photoresist pattern;
selectively removing the silicon-containing thin layer and the hardmask layer using the photoresist pattern to expose a part of the material layer; and
etching an exposed part of the material layer.

13. The method as cla

Assignees

• Samsung Sdi Co Ltd

Inventors

• Nam Youn-Hee
• Kim Seung-Hyun
• Kwon Hyo-Young
• Kim Sung-Hwan
• Namgung Ran
• Mun Soo-Hyoun
• Rathwell Dominea
• Song Hyun-Ji
• Jung Hyeon-Il
• Heo Yu-Mi

Classifications

• H10P95/90

  Thermal treatments, e.g. annealing or sintering · CPC title

• H10P76/2043

  using an anti-reflective coating · CPC title

• H10P76/2041

  Photolithographic processes · CPC title

• H10P76/20

  of masks comprising organic materials · CPC title

• H10P50/692

  characterised by their composition, e.g. multilayer masks or materials · CPC title