Polymer, organic layer composition, organic layer, and method of forming patterns

Patent metadata

Field	Value
Publication number	US-9593205-B2
Application number	US-201514936023-A
Country	US
Kind code	B2
Filing date	Nov 9, 2015
Priority date	Nov 28, 2014
Publication date	Mar 14, 2017
Grant date	Mar 14, 2017

Abstract

A polymer, an organic layer composition including the polymer, an organic layer formed from the organic layer composition, and a method of forming patterns using the organic layer composition, the polymer including a moiety represented by Chemical Formula 1:

*-A 1 -A 3 A 2 -A 4 n *.  [Chemical Formula 1]

First claim

What is claimed is:

1. A polymer including a moiety represented by Chemical Formula 1:
*-A 1 -A 3 A 2 -A 4 n *  [Chemical Formula 1]

wherein, in Chemical Formula 1,
A 1 and A 2 are each independently a divalent nitrogen atom-containing aromatic ring group, provided that the nitrogen atom of the divalent nitrogen atom-containing aromatic ring group is bonded with a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkyl group including at least one oxygen atom (—O—), a carbonyl (—C(═O)—)-containing group, or a combination thereof,
A 3 and A 4 are each independently a divalent group represented by Chemical Formula 2, and
n is 0 or 1,

wherein, in Chemical Formula 2,
X 1 and X 2 are each independently substituted or unsubstituted C6 to C30 aryl group, and
X 3 is a substituted or unsubstituted C6 to C50 arylene group, and
wherein * indicates a linking point.

2. The polymer as claimed in claim 1 , wherein the divalent nitrogen atom-containing aromatic ring group is a divalent group of one of the following compounds:

wherein, in the above compounds,
R 1 , R 2 , and R 3 are each independently a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkyl group including at least one oxygen atom (—O—), a carbonyl (—C(═O)—)-containing group, or a combination thereof,
Z 1 to Z 6 are each independently a hydroxy group, a methoxy group, an ethoxy group, a halogen, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 cycloalkenyl group, a substituted or unsubstituted C1 to C20 alkylamine group, a substituted or unsubstituted C7 to C20 arylalkyl group, a substituted or unsubstituted C1 to C20 heteroalkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, a substituted or unsubstituted C2 to C30 heteroaryl group, a substituted or unsubstituted C1 to C4 alkyl ether group, a substituted or unsubstituted C7 to C20 arylalkylene ether group, a substituted or unsubstituted C1 to C30 haloalkyl group, or a combination thereof, and
a, b, c, d, e, and f are each independently an integer of 0 to 2.

3. The polymer as claimed in claim 2 , wherein R 1 , R 2 , and R 3 are each independently a group including at least three carbons.

4. The polymer as claimed in claim 2 , wherein R 1 , R 2 , and R 3 are each independently a group represented by one of Chemical Formulae 3 to 6:

wherein in Chemical Formulae 3 to 6,
k, m, and t are each independently an integer of 1 to 10.

5. The polymer as claimed in claim 4 , wherein, in Chemical Formula 3, k is an integer of 3 to 10.

6. The polymer as claimed in claim 4 , wherein, in Chemical Formula 6, —(C k H 2k+1 ) is a t-butyl group.

7. The polymer as claimed in claim 1 , wherein, in Chemical Formula 2,
the C6 to C30 aryl group is a monovalent group including one of the following moieties:

and
the C6 to C50 arylene group is a divalent group including one of the following moieties:

8. The polymer as claimed in claim 1 , wherein, in Chemical Formula 2, at least one of X 1 , X 2 , and X 3 is a substituted or unsubstituted naphthalene group, a substituted or unsubstituted biphenyl group, a substituted or unsubstituted pyrene group, a substituted or unsubstituted perylene group, a substituted or unsubstituted benzoperylene group, a substituted or unsubstituted coronene group, or a combination thereof.

9. The polymer as claimed in claim 1 , wherein the polymer includes a repeating unit represented by one of Chemical Formulae 1-1 to 1-4:

wherein, in Chemical Formulae 1-1 to 1-4,
R 4 and R 5 are each independently a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkyl group including at least one oxygen atom (—O—), a carbonyl (—C(═O)—)-containing group, or a combination thereof,
Z 11 to Z 22 are each independently a hydroxy group, a methoxy group, an ethoxy group, a halogen, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 cycloalkenyl group, a substituted or unsubstituted C1 to C20 alkylamine group, a substituted or unsubstituted C7 to C20 arylalkyl group, a substituted or unsubstituted C1 to C20 heteroalkyl group, a substituted or unsubstituted C2 to C30 heterocycloalkyl group, a substituted or unsubstituted C2 to C30 heteroaryl group, a substituted or unsubstituted C1 to C4 alkyl ether group, a substituted or unsubstituted C7 to C20 arylalkylene ether group, a substituted or unsubstituted C1 to C30 haloalkyl group, or a combination thereof,
n 11 to n 22 are each independently an integer of 0 to 2,
n 0 is an integer of 2 to 300, and
* indicates a linking point.

10. The polymer as claimed in claim 1 , wherein the polymer has a weight average molecular weight of about 1,000 to about 200,000.

11. An organic layer composition, comprising:
the polymer as claimed in claim 1 ; and
a solvent.

12. The organic layer composition as claimed in claim 11 , wherein the polymer is present in an amount of about 0.1 wt % to about 30 wt %, based on a total weight of the organic layer composition.

13. A method of forming patterns, the method comprising:
providing a material layer on a substrate;
applying the organic layer composition as claimed in claim 11 on the material layer;
heat-treating the organic layer composition to form a hard mask layer;
forming a silicon-containing thin layer on the hard mask layer;
forming a photoresist layer on the silicon-containing thin layer;
exposing and developing the photoresist layer to form a photoresist pattern;
selectively removing the silicon-containing thin layer using the photoresist pattern to expose a part of the material layer; and
etching an exposed part of the material layer.

14. The method as claimed in claim 13 , wherein applying the organic layer composition includes performing a spin-on coating method.

15. The method as claimed in claim 13 , wherein heat-treating the organic layer is performed at about 100° C. to about 500° C.

16. The method as claimed in claim 13 , further comprising forming a bottom antireflective coating prior to forming the photoresist layer.

17. The method as claimed in claim 13 , wherein the silicon-containing thin layer includes SiCN, SiOC, SiON, SiOCN, SiC, SiN, or a combination thereof.

Assignees

• Samsung Sdi Co Ltd

Inventors

• Mun Soo-Hyoun
• Kwon Hyo-Young
• Kim Seung-Hyun
• Namgung Ran
• Rathwell Dominea
• Jung Hyeon-Il
• Heo Yu-Mi

Classifications

• H10P76/4085

  characterised by the processes involved to create the masks · CPC title

• H10P76/2043

  using an anti-reflective coating · CPC title

• H10P76/405

  characterised by their composition, e.g. multilayer masks · CPC title

• H10P50/695

  characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask · CPC title

• H10P50/692

  characterised by their composition, e.g. multilayer masks or materials · CPC title