Integrated circuit devices including a vertical memory device

Patent metadata

Field	Value
Publication number	US-10312191-B2
Application number	US-201815923737-A
Country	US
Kind code	B2
Filing date	Mar 16, 2018
Priority date	Jul 21, 2017
Publication date	Jun 4, 2019
Grant date	Jun 4, 2019

Abstract

Provided is an integrated circuit device including a plurality of word lines overlapping each other, in a vertical direction, on a substrate, a plurality of channel structures extending in the vertical direction through the plurality of word lines on an area of the substrate, a plurality of bit line contact pads on the plurality of channel structures, and a plurality or bit lines, wherein the plurality of bit lines include a plurality of first bit lines extending parallel to each other at a first pitch in a center region of the area, and a plurality of second bit lines extending at a second pitch in an edge region of the area, the second pitch being different from the first pitch.

First claim

What is claimed is:

1. An integrated circuit device comprising:
a plurality of word lines extending parallel to a main surface of a substrate and overlapping each other in a vertical direction, on the substrate,
a plurality of channel structures extending in the vertical direction through the plurality of word lines on an area of the substrate,
a plurality of bit line contact pads on the plurality of channel structures, and
a plurality of bit lines connected to the plurality of channel structures through the plurality of bit line contact pads on the area,
wherein the plurality of bit lines comprise
a plurality of first bit lines extending parallel to each other at a first pitch in a center region of the area, and
a plurality of second bit lines extending at a second pitch in an edge region of the area, the second pitch being different from the first pitch.

2. The integrated circuit device of claim 1 , wherein the plurality of first bit lines and the plurality of second bit lines extend linearly.

3. The integrated circuit device of claim 1 , wherein the first pitch is a constant pitch and the second pitch is a variable pitch, and
wherein at least some separation distances of a plurality of separation distances between adjacent ones of the plurality of second bit lines increase with increasing distance from the center region of the area.

4. The integrated circuit device of claim 1 , wherein the first pitch is a constant pitch and the second pitch is a variable pitch, and
wherein a plurality of separation distances between adjacent ones of the plurality of second bit lines comprise a first separation distance regardless of a distance from the center region of the area, and a plurality of second separation distances that increase with increasing distance from the center region of the area.

5. The integrated circuit device of claim 1 , wherein the plurality of channel structures comprise a nonlinear channel structure having a sidewall extending along a non-planar surface in the vertical direction in the edge region of the area.

6. The integrated circuit device of claim 1 , wherein the plurality of first bit lines extend linearly in the center region, and
wherein the plurality of second bit lines extend nonlinearly in the edge region.

7. The integrated circuit device of claim 1 , wherein the plurality of bit line contact pads comprise:
a plurality of first bit line contact pads arranged at a constant pitch in the center region of the area; and
a plurality of second bit line contact pads arranged at a variable pitch in the edge region of the area.

8. The integrated circuit device of claim 1 , further comprising
a plurality of common source lines extending parallel to each other in a first horizontal direction and being within a plurality of word line cut regions defining a width of the plurality of word lines in a second horizontal direction perpendicular to the first horizontal direction,
wherein the plurality of bit lines extend in the second horizontal direction.

9. The integrated circuit device of claim 6 , wherein at least some second bit lines of the plurality of second bit lines comprise a convex curved portion in a direction away from the center region of the area.

10. The integrated circuit device of claim 6 , wherein at least some second bit lines of the plurality of second bit lines comprise a convex curved portion in a direction toward the center region of the area.

11. An integrated circuit device comprising:
a plurality of word lines extending parallel to a main surface of a substrate and overlapping each other in a vertical direction perpendicular to the main surface, the substrate having a memory cell region and a connection region sequentially arranged in a first horizontal direction,
a plurality of word line cut regions extending in the first horizontal direction and defining a width of the plurality of word lines in a second horizontal direction perpendicular to the first horizontal direction,
a plurality of channel structures extending in the vertical direction through the plurality of word lines in the memory cell region, and
a plurality of bit lines arranged on the plurality of channel structures in the memory cell region,
wherein the plurality of channel structures comprise a plurality of nonlinear channel structures extending nonlinearly in the memory cell region in the vertical direction, and
the plurality of bit lines comprise a plurality of nonlinear bit lines arranged at a variable pitch in the memory cell region in the first horizontal direction and extending on the plurality of nonlinear channel structures in the second horizontal direction.

12. The integrated circuit device of claim 11 , wherein the plurality of nonlinear bit lines comprise a curved portion that is convex toward the connection region.

13. The integrated circuit device of claim 11 , further comprising
a plurality of bit line contact pads arranged between the plurality of nonlinear channel structures and the plurality of nonlinear bit lines to connect each of the plurality of nonlinear channel structures to a respective one of the plurality of nonlinear bit lines,
wherein the plurality of bit line contact pads are arranged at a variable pitch in the first horizontal direction.

14. The integrated circuit device of claim 11 , wherein the plurality of nonlinear channel structures comprise:
a nonlinear channel structure connected to one of the plurality of bit lines; and
a nonlinear dummy channel structure that is not connected to any of the plurality of bit lines.

15. The integrated circuit device of claim 11 , further comprising a plurality of dummy channel structures extending through at least some word lines of the plurality of word lines in the connection region in the vertical direction,
wherein a width of respective ones of the plurality of dummy channel structures is larger than that of respective ones of the plurality of nonlinear channel structures.

16. The integrated circuit device of claim 11 , further comprising:
a first dummy channel structure in the memory cell region that is not connected to any one of the plurality of bit lines; and
a second dummy channel structure in the connection region that is not connected to any one of the plurality of bit lines,
wherein the second dummy channel structure nonlinearly extends in the vertical direction.

17. An integrated circuit device, comprising
a plurality of word lines extending parallel to a main surface of a substrate and overlapping each other in a vertical direction perpendicular to the main surface on the substrate,
a common source line extending in a first horizontal direction on the substrate along one side of the plurality of word lines,
a plurality of channel structures extending through the plurality of word lines in the vertical direction,
a plurality of bit line contact pads on the plurality of channel structures, and
a plurality of bit lines connected to the plurality of channel structures through the plurality of bit line contact pads,
wherein the plurality of channel structures comprise a plurality of first channel structures extending linearly in the vertical direction and a plurality of second channel structures extending nonlinearly in the vertical direction, and
the plurality of bit lines comprise a plurality of first bit lines extending linearly in a second horizontal direction perpendicular to the first horizontal direction and a plurality of second bit lines extending nonlinearly in the second horizontal direction.

18. The integrated circuit d

Assignees

• Samsung Electronics Co Ltd

Inventors

• Jung Young-Jin
• Lee Joon-Hee

Classifications

• H10W20/43 Primary

  Layouts of interconnections · CPC title

• H01L27/11582

  Electricity · mapped topic

• H01L27/11556

  Electricity · mapped topic

• H01L23/528 Primary

  Electricity · mapped topic

• H10D30/711

  having floating bodies · CPC title