Overlay design optimization

Patent metadata

Field	Value
Publication number	US-10311198-B2
Application number	US-201515119306-A
Country	US
Kind code	B2
Filing date	Feb 16, 2015
Priority date	Feb 16, 2014
Publication date	Jun 4, 2019
Grant date	Jun 4, 2019

Abstract

A sample comprising an overlay target is presented. The overlay target comprises at least one pair of patterned structures, the patterned structures of the pair being accommodated in respectively bottom and top layers of the sample with a certain vertical distance h between them, wherein a pattern in at least one of the patterned structures has at least one pattern parameter optimized for a predetermined optical overlay measurement scheme with a predetermined wavelength range.

First claim

The invention claimed is:

1. A sample comprising an overlay target comprising at least one pair of patterned structures, the patterned structures of the pair being top and bottom patterned structures arranged in respectively a top layer of the sample and one of underneath layers of the sample with a certain vertical distance h between them, wherein a pattern in at least one of the patterned structures is configured as a global pattern G glob formed by spaced-apart global features arranged with a pitch P approximately equal to said vertical distance h, wherein each of the global features of the global pattern is configured as a building block of a local pattern G loc of spaced-apart local features arranged with a predefined pitch value P′, at least one pattern parameter of said at least one of the patterned structures being optimized for a predetermined optical overlay measurement scheme with a predetermined wavelength range.

2. The sample according to claim 1 , wherein said at least one pattern parameter being optimized comprises a value of said pitch P of the global pattern G glob , while maintaining said predefined pitch value P′.

3. The sample according to claim 1 , wherein said at least one patterned structure is located in the top layer of the sample.

4. The sample according to claim 1 , wherein said at least one pattern parameter being optimized comprises a duty cycle of the global pattern.

5. The sample of claim 1 , being a semiconductor wafer carrying said overlay target.

6. The sample according to claim 1 , wherein said distance h is of about 1 μm, and the pitch P is about 0.8 μm.

7. The sample according to claim 1 , wherein a duty cycle of the first global pattern is about 30%.

8. A semiconductor wafer structure comprising an overlay target comprising at least one pair of patterned structures, the patterned structures of the pair being top and bottom patterned structures arranged in respectively a top layer of the wafer structure and one of underneath layers of the wafer structure with a certain vertical distance h between them, wherein a pattern in at least one of the patterned structures is configured as a global pattern G glob formed by spaced-apart global features arranged with a pitch P approximately equal to said vertical distance h, wherein each of the global features of the global pattern is configured as a local pattern G loc of spaced-apart local features arranged with a predefined pitch value P′, at least a value of said pitch P of the global pattern G glob being selected for a predetermined optical overlay measurement scheme, requiring to maintain said predefined pitch value P′.

9. The sample according to claim 8 , wherein said distance h is of about 1 μm, and the pitch P is about 0.8 μm.

10. The sample according to claim 8 , wherein a duty cycle of the first global pattern is about 30%.

11. A sample comprising an overlay target comprising at least one pair of patterned structures, the patterned structures of the pair being top and bottom patterned structures arranged in respectively a top layer of the sample and one of underneath layers of the sample with a certain vertical distance h between them, wherein at least one of the patterned structures of the pair comprises a first global pattern in the form of spaced-apart global features of the first global pattern which are arranged with a pitch P approximately equal to said vertical distance h and each of said global features of the global pattern is configured as a building block of a second local pattern of spaced-apart local features arranged with a predefined pitch value P′.

12. The sample according to claim 11 , wherein said distance h is of about 1 μm, and the pitch P is about 0.8 μm.

13. The sample according to claim 11 , wherein a duty cycle of the first global pattern is about 30%.

Assignees

• Nova Measuring Instr Ltd

Inventors

• Barak Gilad
• Verdene Tal
• Yachini Michal
• Shafir Dror
• Moon Changman
• Wolfling Shay

Classifications

• H10P76/204

  of organic photoresist masks · CPC title

• H10P72/0618

  using identification means, e.g. labels on substrates or labels on containers · CPC title

• G03F7/70683

  Mark designs · CPC title

• G06F30/392

  Floor-planning or layout, e.g. partitioning or placement · CPC title

• G06F30/398 Primary

  Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM] (optical proximity correction [OPC] design processes G03F1/36) · CPC title