Control of current density in an electroplating apparatus

Patent metadata

Field	Value
Publication number	US-10214829-B2
Application number	US-201815984162-A
Country	US
Kind code	B2
Filing date	May 18, 2018
Priority date	Mar 20, 2015
Publication date	Feb 26, 2019
Grant date	Feb 26, 2019

Abstract

Various embodiments herein relate to methods and apparatus for electroplating metal onto substrates. In various cases, a reference electrode may be modified to promote improved electroplating results. The modifications may relate to one or more of the reference electrode's shape, position, relative conductivity compared to the electrolyte, or other design feature. In some particular examples the reference electrode may be dynamically changeable, for example having a changeable shape and/or position. In a particular example the reference electrode may be made of multiple segments. The techniques described herein may be combined as desired for individual applications.

First claim

What is claimed is:

1. A method for electroplating metal onto a substrate, the method comprising:
(a) receiving the substrate in an electroplating chamber, wherein the substrate is a semiconductor substrate, and wherein a reference electrode comprising a dynamically changeable shape is provided in the electroplating chamber;
(b) immersing the substrate in an electrolyte in the electroplating chamber while changing the shape of the reference electrode from a first shape to a second shape; and
(c) electroplating metal onto the substrate while monitoring a potential difference between the substrate and the reference electrode.

2. The method of claim 1 , wherein the first shape and second shape are each arc shapes, and wherein the first shape and second shape extend to different angular extents.

3. The method of claim 2 , wherein the first shape extends to a greater angular extent than the second shape.

4. The method of claim 2 , wherein the first shape extends to a lower angular extent than the second shape.

5. The method of claim 2 , wherein the first shape and second shape differ by an angular extent of at least about 10°.

6. The method of claim 2 , wherein the first shape and second shape differ by an angular extent of at least about 30°.

7. The method of claim 1 , wherein the reference electrode comprises segments that slide over one another and/or telescope into one another.

8. The method of claim 1 , wherein the reference electrode is positioned radially outside of a periphery of the substrate at a location that is angularly offset from a substrate entry position, the angular offset being between about 30-90°.

9. The method of claim 1 , wherein the reference electrode is positioned radially outside of a periphery of the substrate at a location that is angularly offset from a substrate entry position, the angular offset being between about 5-60°.

10. The method of claim 9 , wherein the angular offset is between about 20-40°.

11. The method of claim 1 , wherein the angular offset is between about 25-35°.

12. A method of electroplating metal onto a semiconductor substrate, the method comprising:
immersing the substrate in electrolyte in an electroplating chamber;
monitoring a potential difference between the substrate and a reference electrode, wherein the reference electrode is between about 10×-225× as conductive as the electrolyte; and
electroplating metal onto the substrate.

13. The method of claim 12 , wherein the reference electrode is ring-shaped and wherein the reference electrode is between about 10×-50× as conductive as the electrolyte.

14. The method of claim 12 , wherein the reference electrode is arc-shaped, the arc of the reference electrode spanning an angular extent between about 75-150°, wherein the reference electrode is between about 100×-200× as conductive as the electrolyte.

15. The method of claim 14 , wherein the arc of the reference electrode spans an angular extent between about 105-150°, wherein the reference electrode is between about 120×-200× as conductive as the electrolyte.

16. The method of claim 12 , wherein the reference electrode is arc-shaped, the arc of the reference electrode spanning an angular extent between about 150-240°, wherein the reference electrode is between about 70×-100× as conductive as the electrolyte.

Assignees

• Lam Res Corp

Inventors

• He Zhian
• Ramesh Ashwin
• Ghongadi Shantinath

Classifications

• H10W20/057

  by selectively depositing, e.g. by using selective CVD or plating · CPC title

• C25D17/001 Primary

  Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells · CPC title

• C25D5/18

  Electroplating using modulated, pulsed or reversing current · CPC title

• C25D17/12 Primary

  Shape or form (C25D17/14 takes precedence) · CPC title

• C25D21/12 Primary

  Process control or regulation (controlling or regulating in general G05) · CPC title