Current ramping and current pulsing entry of substrates for electroplating

Patent metadata

Field	Value
Publication number	US-9385035-B2
Application number	US-201313987311-A
Country	US
Kind code	B2
Filing date	Jan 7, 2013
Priority date	May 24, 2010
Publication date	Jul 5, 2016
Grant date	Jul 5, 2016

Abstract

In some method and apparatus disclosed herein, the profile of current delivered to the substrate provides a relatively uniform current density on the substrate surface during immersion. These methods include controlling the current density applied across a substrate's surface during immersion by dynamically controlling the current to account for the changing substrate surface area in contact with electrolyte during immersion. In some cases, current density pulses and/or steps are used during immersion, as well.

First claim

What is claimed is:

1. An apparatus for electroplating metal onto a surface of a substrate, comprising:
an electroplating chamber for holding electrolyte;
a substrate holder for supporting a substrate during electroplating;
a power supply for applying current to the substrate during electroplating; and
a controller comprising one or more memory devices and one or more processors to store and execute instructions, respectively, the controller having instructions to:
position the substrate at an angle relative to a surface of electrolyte in the electroplating chamber;
select a set of immersion parameters that define how the substrate is to be immersed in electrolyte during electroplating;
determine an entry profile for the substrate at the set of immersion parameters, wherein the entry profile provides information about how much substrate area is immersed at different points in time during immersion of the substrate in electrolyte, wherein the entry profile is or was determined experimentally by:
providing a test substrate;
immersing the test substrate in electrolyte at the set of immersion parameters;
while immersing the test substrate, applying a series of current changes to thereby form disrupted plating boundaries on the test substrate, where a time between subsequent current changes is known;
removing the test substrate from electrolyte;
analyzing the test substrate to identify positions of the disrupted plating boundaries; and
determining the entry profile based on the positions of the disrupted plating boundaries and the known time between subsequent current changes;

immerse the substrate in electrolyte in the electroplating chamber such that a leading edge of the substrate enters electrolyte before a trailing edge of the substrate, where the leading and trailing edges of the substrate are positioned opposite one another;
apply a current to the substrate as it is immersed, where a current profile applied to the substrate during immersion is determined based on the entry profile for the substrate; and
remove the substrate from the electrolyte.

2. The apparatus of claim 1 , wherein the current profile results in a substantially constant current density applied to the substrate during immersion.

3. The apparatus of claim 2 , wherein the current profile increases in a continuous manner.

4. The apparatus of claim 2 , wherein the current profile increases in a step-wise manner, wherein a duration of the steps is between about 0.1-30 ms.

5. The apparatus of claim 1 , wherein the current profile comprises current pulses such that a current density applied to the substrate during immersion pulses between a substantially constant current density and an increased current density.

6. The apparatus of claim 5 , wherein a magnitude of the increased current density pulses increases during immersion.

7. The apparatus of claim 1 , wherein the current profile comprises one or more pulses and/or steps.

8. The apparatus of claim 7 , wherein the one or more pulses and/or steps occur over only a portion of an immersion process.

9. The apparatus of claim 8 , wherein the one or more pulses and/or steps occur during a final portion of immersion or shortly after immersion is complete.

10. The apparatus of claim 7 , wherein the one or more pulses and/or steps begin as a wafer is first immersed in electrolyte.

11. The apparatus of claim 7 , wherein the one or more pulses and/or steps occur over an entire immersion process.

12. The method of claim 7 , wherein the current profile comprises at least one forward pulse and at least one reverse pulse.

13. A method of electroplating metal onto a substrate, comprising:
positioning the substrate at an angle relative to a surface of electrolyte in an electroplating chamber;
selecting a set of immersion parameters that define how the substrate is to be immersed in electrolyte during electroplating;
determining an entry profile for the substrate at the set of immersion parameters, wherein the entry profile provides information about how much substrate area is immersed at different points in time during immersion of the substrate in electrolyte, wherein the entry profile is determined experimentally by:
providing a test substrate;
immersing the test substrate in electrolyte at the set of immersion parameters;
while immersing the test substrate, applying a series of current changes to thereby form disrupted plating boundaries on the test substrate, where a time between subsequent current changes is known;
removing the test substrate from electrolyte;
analyzing the test substrate to identify positions of the disrupted plating boundaries;
determining the entry profile based on the positions of the disrupted plating boundaries and the known time between subsequent current changes;

immersing the substrate in electrolyte in the electroplating chamber such that a leading edge of the substrate enters electrolyte before a trailing edge of the substrate, where the leading and trailing edges of the substrate are positioned opposite one another;
applying a current to the substrate as it is immersed, where a current profile applied to the substrate during immersion provides increasing current that increases by an amount determined from an amount of substrate area immersed in electrolyte at a given time; and
removing the substrate from the electrolyte.

14. The method of claim 13 , wherein analyzing the test substrate to identify positions of the disrupted plating boundaries comprises analyzing light scattering off of the test substrate.

15. The method of claim 13 , wherein the immersion parameters comprise a tilt of the substrate during immersion and a vertical entry speed of the substrate during immersion.

16. The method of claim 15 , wherein the vertical entry speed is between about 75-600 cm/s, and wherein the tilt is between about 1-5° from the surface of electrolyte.

17. The method of claim 13 , wherein the entry profile takes into account substrate surface area contributed by features on the substrate surface.

18. The method of claim 13 , wherein the current profile provides a substantially constant current density during immersion.

19. The method of claim 18 , wherein the current increases in a continuous manner.

20. The method of claim 18 , wherein the current increases in a step-wise manner having steps between about 0.1-30 ms in duration.

21. The method of claim 13 , wherein the current profile provides a current density profile that comprises one or more current density steps and/or pulses.

22. The method of claim 21 , wherein the current density profile provides a substantially constant current density during most of substrate immersion, and further provides one or more current density pulses and/or steps toward the end of substrate immersion or soon after substrate immersion.

23. The method of claim 21 , wherein the one or more current density steps and/or pulses act to remove at least some metal deposited on the substrate.

24. The method of claim 21 , wherein the current density profile alternates between a substantially fixed current density and the steps and/or pulses.

25. The method of claim 21 , wherein a frequency and/or magnitude of the one or more steps and/or pulses varies over time.

26. The method of claim 25 , wherein the magnitude of the steps and/or pulses increases over time.

27. The method of claim 21 , wherein

Assignees

• Novellus Systems Inc

Inventors

• Spurlin Tighe A
• Zhou Jian
• Opocensky Edward C
• Reid Jonathan
• Mayer Steven T

Classifications

• H10P72/0476

  comprising at least one plating chamber · CPC title

• H10W20/043

  for electroplating · CPC title

• C25D21/12

  Process control or regulation (controlling or regulating in general G05) · CPC title

• C25D7/123

  Semiconductors first coated with a seed layer or a conductive layer · CPC title

• H01L21/76873 Primary

  Electricity · mapped topic