Wetting wave front control for reduced air entrapment during wafer entry into electroplating bath

US9028666B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9028666-B2
Application numberUS-201213460423-A
CountryUS
Kind codeB2
Filing dateApr 30, 2012
Priority dateMay 17, 2011
Publication dateMay 12, 2015
Grant dateMay 12, 2015

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Abstract

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Methods described herein manage wafer entry into an electrolyte so that air entrapment due to initial impact of the wafer and/or wafer holder with the electrolyte is reduced and the wafer is moved in such a way that an electrolyte wetting wave front is maintained throughout immersion of the wafer also minimizing air entrapment.

First claim

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What is claimed is: 1. A method of immersing a wafer into an electrolyte of a plating bath, the method comprising: (a) positioning the wafer horizontally at a first height above the electrolyte, wherein a planar plating surface of the wafer is parallel to a plane defined by the surface of the electrolyte; (b) tilting the wafer at an angle such that the planar plating surface of the wafer is no longer parallel to the plane defined by the surface of the electrolyte; (c) moving t…

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What does patent US9028666B2 cover?
Methods described herein manage wafer entry into an electrolyte so that air entrapment due to initial impact of the wafer and/or wafer holder with the electrolyte is reduced and the wafer is moved in such a way that an electrolyte wetting wave front is maintained throughout immersion of the wafer also minimizing air entrapment.
Who is the assignee on this patent?
Ranjan Manish, Ghongadi Shantinath, Wilmot Frederick Dean, and 3 more
What technology area does this patent fall under?
Primary CPC classification C25D5/00. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue May 12 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).