Control of current density in an electroplating apparatus

Patent metadata

Field	Value
Publication number	US-10214828-B2
Application number	US-201815984119-A
Country	US
Kind code	B2
Filing date	May 18, 2018
Priority date	Nov 7, 2008
Publication date	Feb 26, 2019
Grant date	Feb 26, 2019

Abstract

Various embodiments herein relate to methods and apparatus for electroplating metal onto substrates. In various cases, a reference electrode may be modified to promote improved electroplating results. The modifications may relate to one or more of the reference electrode's shape, position, relative conductivity compared to the electrolyte, or other design feature. In some particular examples the reference electrode may be dynamically changeable, for example having a changeable shape and/or position. In a particular example the reference electrode may be made of multiple segments. The techniques described herein may be combined as desired for individual applications.

First claim

What is claimed is:

1. A method of electroplating metal onto a substrate, the method comprising:
(a) receiving the substrate in an electroplating chamber, wherein the substrate is a semiconductor substrate, and wherein a reference electrode comprising multiple segments that can be independently activated and deactivated is provided in the electroplating chamber;
(b) activating multiple segments of the reference electrode;
(c) after (b), independently deactivating one or more of the segments of the reference electrode while immersing the substrate in electrolyte in the electroplating chamber; and
(e) electroplating metal onto the substrate while monitoring a potential difference between the substrate and the reference electrode.

2. The method of claim 1 , wherein the reference electrode is positioned radially outside of a periphery of the substrate at a location that is angularly offset from a substrate entry position, the angular offset being 60° or 180°.

3. An apparatus for electroplating metal onto a substrate, the apparatus comprising:
a chamber for holding electrolyte;
a substrate holder for holding the substrate in the chamber;
a reference electrode; and
a controller configured to cause:
immersing the substrate in the electrolyte at an angle such that a leading edge of the substrate contacts the electrolyte before a trailing edge of the substrate, the leading edge of the substrate first contacting the electrolyte at a substrate entry position,
controlling a potential difference between the substrate and the reference electrode during immersion, and
electroplating metal onto the substrate;

wherein the reference electrode is positioned radially outside of the periphery of the substrate at a location that is angularly offset from the substrate entry position, the angular offset being 60° or 180°.

4. The apparatus of claim 3 , wherein the angular offset is 60°.

5. The apparatus of claim 3 , wherein the angular offset is 180°.

6. The apparatus of claim 3 , wherein the reference electrode is a point reference electrode.

7. The apparatus of claim 3 , wherein the reference electrode comprises multiple segments that can be independently activated and deactivated.

8. The apparatus of claim 3 , wherein the controller is further configured to cause activating multiple segments of the reference electrode prior to immersion of the substrate, and deactivating one or more of the segments of the reference electrode while the substrate is being immersed.

Assignees

• Lam Res Corp

Inventors

• He Zhian
• Ramesh Ashwin
• Ghongadi Shantinath

Classifications

• H10W20/057

  by selectively depositing, e.g. by using selective CVD or plating · CPC title

• C25D17/12 Primary

  Shape or form (C25D17/14 takes precedence) · CPC title

• C25D17/001 Primary

  Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells · CPC title

• C25D5/18

  Electroplating using modulated, pulsed or reversing current · CPC title

• C25D21/12 Primary

  Process control or regulation (controlling or regulating in general G05) · CPC title