Semiconductor substrate, epitaxial wafer, and method for manufacturing epitaxial wafer
US-2017145590-A1 · May 25, 2017 · US
METHOD FOR GROWING BETA-Ga2O3-BASED SINGLE CRYSTAL FILM, AND CRYSTALLINE LAYERED STRUCTURE
US2016265137A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016265137-A1 |
| Application number | US-201415025956-A |
| Country | US |
| Kind code | A1 |
| Filing date | Sep 18, 2014 |
| Priority date | Sep 30, 2013 |
| Publication date | Sep 15, 2016 |
| Grant date | — |
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Abstract
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As one embodiment, the present invention provides a method for growing a β-Ga 2 O 3 -based single crystal film by using HVPE method. The method includes a step of exposing a Ga 2 O 3 -based substrate to a gallium chloride-based gas and an oxygen-including gas, and growing a β-Ga 2 O 3 -based single crystal film on a principal surface of the Ga 2 O 3 -based substrate at a growth temperature of not lower than 900° C.
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1 . A method for growing a β-Ga 2 O 3 -based single crystal film by HYPE method, comprising a step of exposing a Ga 2 O 3 -based substrate to a gallium chloride-based gas and an oxygen-including gas and growing a β-Ga 2 O 3 -based single crystal film on a principal surface of the Ga 2 O 3 -based substrate at a growth temperature of not lower than 900° C. 2 . The method for growing a β-Ga 2 O 3 -based single crystal film according to claim 1 , wherein the gallium chloride-based gas is produced by reacting a gallium source with a Cl-including gas comprising a Cl 2 gas or an HCl gas. 3 . The method for growing a β-Ga 2 O 3 -based single crystal film according to claim 1 , wherein in the gallium chloride-based gas a GaCl gas has a highest partial pressure ratio. 4 . The method for growing a β-Ga 2 O 3 -based single crystal film according to claim 1 , wherein the oxygen-including gas comprises an O 2 gas. 5 . The method for growing a β-Ga 2 O 3 -based single crystal film according to claim 2 , wherein the Cl-including gas comprises a Cl 2 gas. 6 . The method for growing a β-Ga 2 O 3 -based single crystal film according to claim 1 , wherein a ratio of a supplied partial pressure of the oxygen-including gas to a supplied partial pressure of the gallium chloride-based gas when growing the β-Ga 2 O 3 -based single crystal film is not more than 0.5. 7 . The method for growing a β-Ga 2 O 3 -based single crystal film according to claim 1 , wherein the principal surface of the Ga 2 O 3 -based substrate has a plane orientation of (010), (−01), (001) or (101). 8 . The method for growing a β-Ga 2 O 3 -based single crystal film according to claim 1 , wherein the gallium chloride-based gas is produced at an atmosphere temperature of not less than 300° C. 9 . A crystalline layered structure, comprising: a Ga 2 O 3 -based substrate; and a β-Ga 2 O 3 -based single crystal film that is formed on a principal surface of the Ga 2 O 3 -based substrate by epitaxial crystal growth and includes Cl. 10 . The crystalline layered structure according to claim 9 , wherein a Cl concentration in the β-Ga 2 O 3 -based single crystal film is not more than 5×10 16 atoms/cm 3 . 11 . The crystalline layered structure according to claim 9 , wherein the β-Ga 2 O 3 -based single crystal film comprises a β-Ga 2 O 3 crystal film. 12 . The crystalline layered structure according to claim 11 , wherein a residual carrier concentration in the β-Ga 2 O 3 -based single crystal film is not more than 3×10 15 atoms/cm 3 . 13 . The method for growing a β-Ga 2 O 3 -based single crystal film according to claim 2 , wherein in the gallium chloride-based gas a GaCl gas has a highest partial pressure ratio. 14 . The method for growing a β-Ga 2 O 3 -based single crystal film according to claim 2 , wherein the oxygen-including gas comprises an O 2 gas. 15 . The method for growing a β-Ga 2 O 3 -based single crystal film according to claim 2 , wherein a ratio of a supplied partial pressure of the oxygen-including gas to a supplied partial pressure of the gallium chloride-based gas when growing the β-Ga 2 O 3 -based single crystal film is not more than 0.5. 16 . The method for growing a β-Ga 2 O 3 -based single crystal film according to claim 2 , wherein the principal surface of the Ga 2 O 3 -based substrate has a plane orientation of (010), (−201), (001) or (101). 17 . The method for growing a β-Ga 2 O 3 -based single crystal film according to claim 2 , wherein the gallium chloride-based gas is produced at an atmosphere temperature of not less than 300° C. 18 . The crystalline layered structure according to claim 10 , wherein the β-Ga 2 O 3 -based single crystal film comprises a β-Ga 2 O 3 crystal film.
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Monocrystalline · CPC title
Microstructure · CPC title
N-type · CPC title
being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title
Crystal orientations · CPC title
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Frequently asked questions
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- What does patent US2016265137A1 cover?
- As one embodiment, the present invention provides a method for growing a β-Ga 2 O 3 -based single crystal film by using HVPE method. The method includes a step of exposing a Ga 2 O 3 -based substrate to a gallium chloride-based gas and an oxygen-including gas, and growing a β-Ga 2 O 3 -based single crystal film on a principal surface of the Ga 2 O 3 -based substrate at a growth temperature of n…
- Who is the assignee on this patent?
- Tamura Seisakusho Kk, Nat Univ Corp Tokyo Univ Agriculture & Tech
- What technology area does this patent fall under?
- Primary CPC classification C30B25/165. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Thu Sep 15 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).