Ga2O3 semiconductor element

Patent metadata

Field	Value
Publication number	US-9437689-B2
Application number	US-201214343367-A
Country	US
Kind code	B2
Filing date	Sep 7, 2012
Priority date	Sep 8, 2011
Publication date	Sep 6, 2016
Grant date	Sep 6, 2016

Abstract

A Ga 2 O 3 semiconductor element includes: an n-type β-Ga 2 O 3 single crystal film, which is formed on a high-resistance β-Ga 2 O 3 substrate directly or with other layer therebetween; a source electrode and a drain electrode, which are formed on the n-type β-Ga 2 O 3 single crystal film; and a gate electrode, which is formed on the n-type β-Ga 2 O 3 single crystal film between the source electrode and the drain electrode.

First claim

The invention claimed is:

1. A Ga 2 O 3 -based semiconductor element, comprising:
a β-Ga 2 O 3 single crystal film that is formed on a main surface of a β-Ga 2 O 3 substrate, the main surface being rotated from 50° to 90° with respect to a (100) plane;
a source electrode and a drain electrode that are formed on a same side of the β-Ga 2 O 3 single crystal film;
a gate electrode that is formed on the β-Ga 2 O 3 single crystal film between the source electrode and the drain electrode;
a first region formed in the β-Ga 2 O 3 single crystal film under the source electrode and the drain electrode and including a controlled first dopant concentration; and
a second region formed to surround the first region and including a controlled second dopant concentration lower than the controlled first dopant concentration,
wherein the β-Ga 2 O 3 substrate includes a p-type dopant to be a high electrical resistance.

2. The Ga 2 O 3 -based semiconductor element according to claim 1 , wherein the semiconductor element further comprises a Ga 2 O 3 -based MISFET, and
wherein the gate electrode is formed on the β-Ga 2 O 3 single crystal film via a gate insulating film.

3. The Ga 2 O 3 -based semiconductor element according to claim 1 , wherein the first region comprises a source region and a drain region formed in the β-Ga 2 O 3 single crystal film under the source electrode and the drain electrode, respectively.

4. The Ga 2 O 3 -based semiconductor element according to claim 3 , wherein the β-Ga 2 O 3 single crystal film, the source region and the drain region are n-type, and
wherein the second region comprises a p-type or high-resistance body region formed in the β-Ga 2 O 3 single crystal film so as to surround the source region.

5. The Ga 2 O 3 -based semiconductor element according to claim 1 , wherein the semiconductor element further comprises a Ga 2 O 3 -based MESFET, and
wherein the gate electrode is formed directly on the β-Ga 2 O 3 single crystal film.

6. The Ga 2 O 3 -based semiconductor element according to claim 5 , wherein the β-Ga 2 O 3 single crystal film is n-type, and
wherein the semiconductor element further comprises an n-type source region and an n-type drain region formed in the β-Ga 2 O 3 single crystal film under the source electrode and the drain electrode, respectively.

7. The Ga 2 O 3 -based semiconductor element according to claim 2 , wherein the first region comprises a source region and a drain region formed in the β-Ga 2 O 3 single crystal film under the source electrode and the drain electrode, respectively.

8. The Ga 2 O 3 -based semiconductor element according to claim 1 , wherein an upper surface of the first region is flush with an upper surface of the β-Ga 2 O 3 single crystal film.

9. The Ga 2 O 3 -based semiconductor element according to claim 8 , wherein an upper surface of the second region is flush with an upper surface of the β-Ga 2 O 3 single crystal film.

10. The Ga 2 O 3 -based semiconductor element according to claim 9 , wherein the source electrode is disposed on the upper surface of the first region.

11. The Ga 2 O 3 -based semiconductor element according to claim 9 , wherein the source electrode abuts the upper surface of the first region.

12. The Ga 2 O 3 -based semiconductor element according to claim 11 , wherein the gate electrode is formed on the β-Ga 2 O 3 single crystal film via a gate insulating film disposed on a bottom surface of the gate electrode.

13. The Ga 2 O 3 -based semiconductor element according to claim 12 , wherein a bottom surface of the gate insulating film is disposed on the upper surface of the first region.

14. The Ga 2 O 3 -based semiconductor element according to claim 12 , wherein a bottom surface of the gate insulating film abuts the upper surface of the first region.

15. The Ga 2 O 3 -based semiconductor element according to claim 14 , wherein the bottom surface of the gate insulating film is further disposed on the upper surface of the second region.

16. The Ga 2 O 3 -based semiconductor element according to claim 15 , wherein the bottom surface of the gate insulating film further abuts the upper surface of the second region.

17. The Ga 2 O 3 -based semiconductor element according to claim 16 , wherein the bottom surface of the gate insulating film further abuts an upper surface of the β-Ga 2 O 3 single crystal film.

Assignees

• Sasaki Kohei
• Higashiwaki Masataka
• Tamura Seisakusho Kk
• Nationai Inst Of Information And Communications Tech

Inventors

• Sasaki Kohei
• Higashiwaki Masataka

Classifications

• H10P14/3446

  Transition metal elements; Rare earth elements · CPC title

• H10P14/3442

  N-type · CPC title

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10P14/2926

  Crystal orientations · CPC title

• H10P14/2918 Primary

  being semiconductor metal oxides (Group IIB-VIA materials H10P14/2913) · CPC title