Manufacturing method of metal mask and mask for deposition using said method

Patent metadata

Field	Value
Publication number	US-10151041-B2
Application number	US-201514864924-A
Country	US
Kind code	B2
Filing date	Sep 25, 2015
Priority date	Mar 31, 2015
Publication date	Dec 11, 2018
Grant date	Dec 11, 2018

Abstract

A mask manufacturing method, including manufacturing a first mold, including forming first patterns having inclined surfaces by patterning a silicon substrate; manufacturing a second mold, including forming second patterns that correspond to the first patterns by coating and curing a hardener on a surface of the first mold in which the first patterns are formed; separating the second mold from the first mold; forming a mask pattern by coating a metal layer on the second mold; and separating the metal layer from the second mold.

First claim

What is claimed is:

1. A mask manufacturing method, comprising:
manufacturing a first mold, including forming first patterns having inclined surfaces by patterning a silicon substrate;
manufacturing a second mold, including forming second patterns that correspond to the first patterns by coating and curing a hardener on a surface of the first mold in which the first patterns are formed;
separating the second mold from the first mold;
forming a mask pattern by coating a metal layer on the second mold; and
separating the metal layer from the second mold to form a mask for forming at least a portion of a sub-pixel of a display device,
wherein, in manufacturing the second mold, a light transmissive electrically conductive layer and a carrier substrate are sequentially layered above the hardener,
in manufacturing the second mold, the hardener is hardened through a photo imprint process that is performed by disposing an ultraviolet light source in front of the carrier substrate and emitting ultraviolet light to pass through the carrier substrate and the light transmissive electrically conductive layer, wherein the light transmissive electrically conductive layer transmits ultraviolet light and is electrically conductive, and the carrier substrate is formed of a transparent material that transmits the ultraviolet light.

2. The mask manufacturing method as claimed in claim 1 , wherein:
the first patterns are concave patterns, and
the second patterns are protruding patterns.

3. The mask manufacturing method as claimed in claim 1 , wherein a thickness of the metal layer is smaller than a thickness of the second patterns.

4. The mask manufacturing method as claimed in claim 1 , wherein:
the silicon substrate is an anisotropic silicon substrate, and
in manufacturing the first mold, anisotropic etching is performed on the silicon substrate.

5. The mask manufacturing method as claimed in claim 4 , wherein the silicon substrate is formed of a (100)-oriented silicon substrate.

6. The mask manufacturing method as claimed in claim 1 , wherein each first pattern has a triangular-shaped cross-section having one open side.

7. The mask manufacturing method as claimed in claim 1 , wherein each first pattern has a trapezoid-shaped cross-section having one open side.

8. The mask manufacturing method as claimed in claim 1 , wherein the hardener includes a thermosetting resin.

9. The mask manufacturing method as claimed in claim 1 , wherein the hardener includes a photosensitive resin.

10. The mask manufacturing method as claimed in claim 1 , wherein:
two or more first patterns are formed in the silicon substrate at a distance from each other, and
two or more second patterns are disposed at locations corresponding to the first patterns.

11. The mask manufacturing method as claimed in claim 10 , wherein, in separating the second mold, spaces between neighboring second patterns are opened by performing an etching process on the hardener.

12. The mask manufacturing method as claimed in claim 1 , wherein the metal layer is formed through an electro-forming coating process.

13. A mask for deposition, manufactured using a mask manufacturing method as claimed in claim 1 and having mask patterns formed therein,
wherein the mask pattern is gradually narrowed toward a rear plane of the mask from a front plane of the mask.

14. The mask as claimed in claim 13 , wherein a shape of the mask pattern viewed from the front plane is a rectangular-shaped cross-section.

15. The mask as claimed in claim 13 , wherein the shape of the mask pattern viewed from the front plane is a rectangular shape.

Assignees

• Samsung Display Co Ltd

Inventors

• Han Jeong Won

Classifications

• C25D1/10 Primary

  Moulds; Masks; Masterforms · CPC title