Thin film transistor, method for manufacturing same, and display device
US-2015372147-A1 · Dec 24, 2015 · US
being semiconductor metal oxide, e.g. InGaZnO (Group II-VI materials H10D62/86; Group I-VI materials H10D62/871; Pb compounds or alloys H10D62/874)
being semiconductor metal oxide, e.g. InGaZnO (Group II-VI materials H10D62/86; Group I-VI materials H10D62/871; Pb compounds or alloys H10D62/874) · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10D62/875 |
| Official title | {being semiconductor metal oxide, e.g. InGaZnO (Group II-VI materials H10D62/86; Group I-VI materials H10D62/871; Pb compounds or alloys H10D62/874)} |
| Display label | being semiconductor metal oxide, e.g. InGaZnO (Group II-VI materials H10D62/86; Group I-VI materials H10D62/871; Pb compounds or alloys H10D62/874) |
| Total patents | 677 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is growing.
| Year | Patents |
|---|---|
| 2015 | 66 |
| 2016 | 77 |
| 2017 | 75 |
| 2018 | 44 |
| 2019 | 49 |
| 2020 | 48 |
| 2021 | 49 |
| 2022 | 49 |
| 2023 | 52 |
| 2024 | 42 |
| 2025 | 98 |
| 2026 | 28 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Light emitting display apparatus
US-2015372069-A1 · Dec 24, 2015 · US
Oxide for semiconductor layer of thin film transistor, thin film transistor, and display device
US-2015364553-A1 · Dec 17, 2015 · US
In—Ga—Zn oxide sputtering target and method for producing same
US-9206502-B2 · Dec 8, 2015 · US
Display panel
US-2015346535-A1 · Dec 3, 2015 · US
Method for manufacturing semiconductor device
US-9202877-B2 · Dec 1, 2015 · US
Thin film transistor
US-9202926-B2 · Dec 1, 2015 · US
Semiconductor device and manufacturing method thereof
US-9196745-B2 · Nov 24, 2015 · US
Semiconductor device and method for manufacturing the same
US-9196738-B2 · Nov 24, 2015 · US
Method for manufacturing a tft array substrate comprising a zinc oxide semiconductor layer and an ohmic contact layer
US-2015333159-A1 · Nov 19, 2015 · US
Semiconductor device and manufacturing method of semiconductor device
US-9190527-B2 · Nov 17, 2015 · US
Semiconductor device, electronic component, and electronic device
US-2015310906-A1 · Oct 29, 2015 · US
Schottky barrier diode
US-9171967-B2 · Oct 27, 2015 · US
Method for manufacturing semiconductor device
US-2015303286-A1 · Oct 22, 2015 · US
Thin film transistor, method for manufacturing same, and display device
US-9159836-B2 · Oct 13, 2015 · US
Light emitting display apparatus
US-9153635-B2 · Oct 6, 2015 · US
Semiconductor device, power circuit, and manufacturing method of semiconductor device
US-9153702-B2 · Oct 6, 2015 · US
Method for manufacturing semiconductor device
US-9153436-B2 · Oct 6, 2015 · US
Method for manufacturing semiconductor device
US-2015279977-A1 · Oct 1, 2015 · US
Oxide semiconductor thin film and thin film transistor
US-2015279943-A1 · Oct 1, 2015 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10D62/875?
- CPC H10D62/875 is the Cooperative Patent Classification code for “being semiconductor metal oxide, e.g. InGaZnO (Group II-VI materials H10D62/86; Group I-VI materials H10D62/871; Pb compounds or alloys H10D62/874).”
- How many patents are filed under CPC H10D62/875 (being semiconductor metal oxide, e.g. InGaZnO (Group II-VI materials H10D62/86; Group I-VI materials H10D62/871; Pb compounds or alloys H10D62/874))?
- Our database includes 677 publications tagged with this CPC code.
- Is patent activity under CPC H10D62/875 growing?
- Publication counts under this code: 42 in 2024 vs 98 in 2025 (latest complete years).