Group 5 cyclopentadienyl transition metal-containing precursors for deposition of group 5 transition metal-containing films

Patent metadata

Field	Value
Publication number	US-9518075-B2
Application number	US-201314106241-A
Country	US
Kind code	B2
Filing date	Dec 13, 2013
Priority date	Dec 13, 2013
Publication date	Dec 13, 2016
Grant date	Dec 13, 2016

Abstract

Transition metal-containing precursors are disclosed. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit transition metal-containing films on one or more substrates via a vapor deposition process.

First claim

We claim:

1. A transition metal-containing precursor having the formula:

Formula 1), wherein M is selected from the group consisting of V and Ta and each of R 1 , R 2 , R 3 , R 4 , and R 5 is independently selected from the group consisting of H; a C1-C5 linear, branched, or cyclic alkyl group; a C1-C5 linear, branched, or cyclic alkylsilyl group; a C1-C5 linear, branched, or cyclic alkylamino group; and a C1-C5 linear, branched, or cyclic fluoroalkyl group.

2. The transition metal-containing precursor of claim 1 , wherein R 2 and R 3 are the same.

3. The transition metal-containing precursor of claim 1 , wherein the transition metal-containing precursor is selected from the group consisting of:
tert-butylimidocyclopentadienylmono(diethylamido)mono(iso-propylalkoxo)Vanadium(V);
tert-butylimidocyclopentadienylmono(diethylamido)mono(tert-butylalkoxo)Vanadium(V);
tert-butylimidocyclopentadienylmono(dimethylamido)mono(iso-propylalkoxo)Vanadium(V);
tert-butylimidocyclopentadienylmono(dimethylamido)mono(tert-butylalkoxo)Vanadium(V);
tert-butylimidomethylcyclopentadienylmono(diethylamido)mono(iso-propylalkoxo)Vanadium(V);
tert-butylimidomethylcyclopentadienylmono(diethylamido)mono(tert-butylalkoxo)Vanadium(V);
tert-butylimidomethylcyclopentadienylmono(dimethylamido)mono(iso-propylalkoxo)Vanadium(V);
tert-butylimidomethylcyclopentadienylmono(dimethylamido)mono(tert-butylalkoxo)Vanadium(V);
tert-amylimidocyclopentadienylmono(diethylamido)mono(iso-propylalkoxo)Vanadium(V);
tert-amylimidocyclopentadienylmono(diethylamido)mono(tert-butylalkoxo)Vanadium(V);
tert-amylimidocyclopentadienylmono(dimethylamido)mono(iso-propylalkoxo)Vanadium(V);
tert-amylimidocyclopentadienylmono(dimethylamido)mono(tert-butylalkoxo)Vanadium(V);
tert-butylimidocyclopentadienylmono(diethylamido)mono(iso-propylalkoxo)Tantalum(V);
tert-butylimidocyclopentadienylmono(diethylamido)mono(tert-butylalkoxo)Tantalum(V);
tert-butylimidocyclopentadienylmono(dimethylamido)mono(iso-propylalkoxo)Tantalum(V);
tert-butylimidocyclopentadienylmono(dimethylamido)mono(tert-butylalkoxo)Tantalum(V);
tert-butylimidomethylcyclopentadienylmono(diethylamido)mono(iso-propylalkoxo)Tantalum(V);
tert-butylimidomethylcyclopentadienylmono(diethylamido)mono(tert-butylalkoxo)Tantalum(V);
tert-butylimidomethylcyclopentadienylmono(dimethylamido)mono(iso-propylalkoxo)Tantalum(V);
tert-butylimidomethylcyclopentadienylmono(dimethylamido)mono(tert-butylalkoxo)Tantalum(V);
tert-amylimidocyclopentadienylmono(diethylamido)mono(iso-propylalkoxo)Tantalum(V); and
tert-amylimidocyclopentadienylmono(diethylamido)mono(tert-butylalkoxo)Tantalum(V).

4. The transition metal-containing precursor of claim 2 , wherein the transition metal-containing precursor is tert-butylimidocyclopentadienyl mono(dimethylamino)mono(tert-butylalkoxo)Tantalum(V).

5. A process for the deposition of a transition metal-containing film on a substrate, comprising:
introducing at least one transition metal-containing precursor into a reactor having at least one substrate disposed therein, the at least one transition metal-containing precursor having the following formula:

wherein M is selected from the group consisting of V, and Ta and each of R 1 , R 2 , R 3 , R 4 , and R 5 is independently selected from H; a C1-C5 linear, branched, or cyclic alkyl group; a C1-C5 linear, branched, or cyclic alkylsilyl group; a C1-C5 linear, branched, or cyclic alkylamino group; and a C1-C5 linear, branched, or cyclic fluoroalkyl group; and
depositing at least part of the at least one transition metal-containing precursor onto the at least one substrate to form the transition metal-containing film using a vapor deposition method.

6. The process of claim 5 , further comprising introducing at least one reactant into the reactor.

7. The process of claim 6 , wherein the reactant is selected from the group consisting of H 2 , H 2 CO N 2 H 4 , NH 3 , SiH 4 , Si 2 H 6 , Si 3 H 8 , SiH 2 Me 2 , SiH 2 Et 2 , N(SiH 3 ) 3 , hydrogen radicals thereof; and mixtures thereof.

8. The process of claim 6 , wherein the reactant is selected from the group consisting of: O 2 , O 3 , H 2 O, H 2 O 2 NO, N 2 O, NO 2 , oxygen radicals thereof; and mixtures thereof.

9. The process of claim 6 , wherein the transition metal-containing precursor and the reactant are introduced into the reactor sequentially.

10. The process of claim 5 , wherein the vapor deposition method is chemical vapor deposition.

11. The process of claim 6 , wherein the transition metal-containing precursor and the reactant are introduced into the reactor sequentially.

12. The process of claim 5 , wherein the vapor deposition method is atomic layer deposition.

13. The process of claim 5 , wherein the transition metal-containing precursor is selected from the group consisting of:
tert-butylimidocyclopentadienylmono(diethylamido)mono(iso-propylalkoxo)Vanadium(V);
tert-butylimidocyclopentadienylmono(diethylamido)mono(tert-butylalkoxo)Vanadium(V);
tert-butylimidocyclopentadienylmono(dimethylamido)mono(iso-propylalkoxo)Vanadium(V);
tert-butylimidocyclopentadienylmono(dimethylamido)mono(tert-butylalkoxo)Vanadium(V);
tert-butylimidomethylcyclopentadienylmono(diethylamido)mono(iso-propylalkoxo)Vanadium(V);
tert-butylimidomethylcyclopentadienylmono(diethylamido)mono(tert-butylalkoxo)Vanadium(V);
tert-butylimidomethylcyclopentadienylmono(dimethylamido)mono(iso-propylalkoxo)Vanadium(V);
tert-butylimidomethylcyclopentadienylmono(dimethylamido)mono(tert-butylalkoxo)Vanadium(V);
tert-amylimidocyclopentadienylmono(diethylamido)mono(iso-propylalkoxo)Vanadium(V);
tert-amylimidocyclopentadienylmono(diethylamido)mono(tert-butylalkoxo)Vanadium(V);
tert-amylimidocyclopentadienylmono(dimethylamido)mono(iso-propylalkoxo)Vanadium(V);
tert-amylimidocyclopentadienylmono(dimethylamido)mono(tert-butylalkoxo)Vanadium(V);
tert-butylimidocyclopentadienylmono(diethylamido)mono(iso-propylalkoxo)Tantalum(V);
tert-butylimidocyclopentadienylmono(diethylamido)mono(tert-butylalkoxo)Tantalum(V);
tert-butylimidocyclopentadienylmono(dimethylamido)mono(iso-propylalkoxo)Tantalum(V);
tert-butylimidocyclopentadienylmono(dimethylamido)mono(tert-butylalkoxo)Tantalum(V);
tert-butylimidomethylcyclopentadienylmono(diethylamido)mono(iso-propylalkoxo)Tantalum(V);
tert-butylimidomethylcyclopentadienylmono(diethylamido)mono(tert-butylalkoxo)Tantalum(V);
tert-butylimidomethylcyclopentadienylmono(dimethylamido)mono(iso-propylalkoxo)Tantalum(V);
tert-butylimidomethylcyclopentadienylmono(dimethylamido)mono(tert-butylalkoxo)Tantalum(V);
tert-amylimidocyclopentadienylmono(diethylamido)mono(iso-propylalkoxo)Tantalum(V); and
tert-amylimidocyclopentadienylmono(diethylamido)mono(tert-butylalkoxo)Tantalum(V).

14. The process of claim 13 , wherein the transition metal-containing precursor is tert-butylimidocyclopentadienylmono(dimethylamido)mono(tert-butylalkoxo)Niobium(V) or tert-butylimidocyclopentadienylmono(dimethylamido)mono(tert-butylalkoxo)Tantalum(V).

15. A transition metal-containing precursor having the formula:

Formula 1), wherein M is Nb and each of R 1 , R 2 , R 3 , R 4 , and R 5 is independently selected from the group consisting of H; a C1-C5 linear, branched, or cyclic alkyl group; a C1-C5 linear, branched, or cyclic alkylsilyl group; a C1-C5 linear, branched,

Assignees

• L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude

Inventors

• Lansalot-Matras Clément
• Noh Wontae

Classifications

• C23C16/18 Primary

  from metallo-organic compounds · CPC title

• C07F9/00

  Compounds containing elements of Groups 5 or 15 of the Periodic Table · CPC title

• C07F17/00 Primary

  Metallocenes · CPC title