Substrate processing apparatus and substrate processing method

Patent metadata

Field	Value
Publication number	US-10121646-B2
Application number	US-201715825779-A
Country	US
Kind code	B2
Filing date	Nov 29, 2017
Priority date	Aug 7, 2015
Publication date	Nov 6, 2018
Grant date	Nov 6, 2018

Abstract

In order to remove from a substrate having a concavo-convex pattern formed on a surface of the substrate, a solid material with which a concave portion of the concavo-convex pattern is filled and which is formed by evaporating a solvent in a sublimable substance solution containing a sublimable substance that sublimates at a temperature equal to or higher than a first temperature, and an impurity that evaporates at a temperature equal to or higher than a second temperature that is higher than the first temperature, the prevent invention provides a substrate processing apparatus and a substrate processing method which heat the substrate to a temperature equal to or higher than the second temperature.

First claim

The invention claimed is:

1. A substrate processing apparatus, comprising:
a processing unit configured to remove from a substrate having a concavo-convex pattern formed on a surface of the substrate, a solid material with which a concave portion of the concavo-convex pattern is filled; and
a control unit configured to control an operation of the processing unit,
wherein the processing unit comprises a processing chamber in which the substrate is disposed, a substrate heating unit configured to heat the substrate disposed in the processing chamber, wherein the processing unit further comprises a wall-surface heating unit configured to heat a wall surface of the processing chamber, and an exhaust unit configured to discharge an atmosphere inside the processing chamber,
the solid material is formed by evaporating a solvent in a sublimable substance solution supplied to the concave portion, the sublimable substance solution containing a sublimable substance that sublimates at a temperature equal to or higher than a first temperature, and an impurity that evaporates at a temperature equal to or higher than a second temperature that is higher than the first temperature, and
the control unit controls the substrate heating unit and the exhaust unit so that the substrate disposed in the processing chamber is heated to a temperature equal to or higher than the second temperature while discharging the atmosphere inside the processing chamber.

2. The substrate processing apparatus according to claim 1 ,
wherein the control unit controls the substrate heating unit and the exhaust unit so that the substrate disposed in the processing chamber is heated at a temperature that is equal to or higher than the first temperature and lower than the second temperature and is subsequently heated at a temperature equal to or higher than the second temperature while discharging the atmosphere inside the processing chamber.

3. The substrate processing apparatus according to claim 2 ,
wherein the control unit controls the substrate heating unit and the exhaust unit so that an exhaust volume per unit time discharged from the processing chamber when the substrate disposed in the processing chamber is heated at a temperature equal to or higher than the second temperature exceeds an exhaust volume per unit time discharged from the processing chamber when the substrate disposed in the processing chamber is heated at a temperature that is equal to or higher than the first temperature and lower than the second temperature.

4. The substrate processing apparatus according to claim 1 ,
wherein the control unit controls the substrate heating unit and the exhaust unit so that the substrate disposed in the processing chamber is heated at the temperature equal to or higher than the second temperature while discharging the atmosphere inside the processing chamber.

5. The substrate processing apparatus according to claim 1 ,
wherein the control unit controls the substrate heating unit and the exhaust unit so that a temperature of the substrate disposed in the processing chamber is maintained at a temperature equal to or higher than the second temperature for predetermined time while discharging the atmosphere inside the processing chamber.

6. The substrate processing apparatus according to claim 1 ,
the control unit controls the substrate heating unit, the exhaust unit and the wall-surface heating unit so that the wall surface of the processing chamber is heated to a temperature equal to or higher than the second temperature when the substrate disposed in the processing chamber is heated while discharging the atmosphere inside the processing chamber.

7. The substrate processing apparatus according to claim 1 ,
the apparatus further comprising a supplying unit configured to supply the sublimable substance solution to the concave portion,
wherein the solid material is formed by evaporating the solvent in the sublimable substance solution supplied to the concave portion by the supplying unit.

Assignees

• Tokyo Electron Ltd

Inventors

• Kagawa Koji
• Kawano Hisashi
• Aibara Meitoku
• Yoshida Yuki

Classifications

• H10P72/0602

  Temperature monitoring · CPC title

• H10P72/0462

  characterised by the construction of the processing chambers, e.g. modular processing chambers · CPC title

• H10P72/0434

  mainly by convection · CPC title

• H10P72/0414

  using mainly spraying means, e.g. nozzles · CPC title

• H10P72/0408

  for drying · CPC title