Measuring device and method for measuring layer thicknesses and defects in a wafer stack

Patent metadata

Field	Value
Publication number	US-10109538-B2
Application number	US-201013883777-A
Country	US
Kind code	B2
Filing date	Nov 12, 2010
Priority date	Nov 12, 2010
Publication date	Oct 23, 2018
Grant date	Oct 23, 2018

Abstract

The invention relates to a measurement means and a method for measuring and/or acquiring layer thicknesses and/or voids of one or more layers of a wafer stack on a plurality of measuring points distributed on the wafer stack and a corresponding wafer processing device.

First claim

The invention claimed is:

1. A wafer processing device for processing a temporarily bonded wafer stack, comprising:
a temporary bonding device configured to temporarily bond layers to form the temporarily bonded wafer stack, said temporarily bonded layers comprising a structure wafer, a connecting layer of temporary adhesive, and a carrier wafer, the temporary bonding device being further configured to temporarily bond the structure wafer to the carrier wafer via the temporary adhesive connecting layer;
a measuring device configured to measure layer thicknesses and/or detect voids of one or more of the layers of the temporarily bonded wafer stack on a plurality of measuring points distributed on the temporarily bonded wafer stack, said measuring device comprising:
a housing configured to move relative to the temporarily bonded wafer stack;
a transmitter positioned within said housing in a bottom region thereof, said transmitter being configured to emit signals in the form of electromagnetic waves or ultrasonic waves into the temporarily bonded wafer stack,
a receiver positioned within said housing in the bottom region thereof proximate to said transmitter, said receiver being configured to receive signals that have been emitted by the transmitter and reflected on the temporarily bonded wafer stack, and
an evaluation unit configured to evaluate the signals that have been received by the receiver, distinguish a group of the signals reflected by at least two transitions between the layers of the temporarily bonded wafer stack, determine a distance of each signal of the group to one another and/or to a reference plane (R), and detect the movement of the temporarily bonded wafer stack and/or the device parallel to the reference plane (R) and a position of each measuring point along the reference plane (R), a mount for accommodating and fixing the temporarily bonded wafer stack on one surface of the mount and for moving the fixed temporarily bonded wafer stack parallel to the reference plane (R), and

a debonding device configured to detach the temporarily bonded structure wafer from the carrier wafer.

2. A wafer processing device as claimed in claim 1 , wherein the temporary bonding device, the measuring device, the debonding device, and the mount are disposed in an in-line system having a painting module for at least partial painting of the temporarily bonded wafer stack and an inspection module.

3. The device as claimed in claim 1 , wherein the temporary adhesive connecting layer is positioned between the structure wafer and the carrier wafer to temporarily bond the structure wafer to the carrier wafer.

4. The device as claimed in claim 3 , wherein the measured layer thickness of the temporary adhesive connecting layer is measured and/or voids in the temporary adhesive connecting layer are detected by the transmitter, the receiver, and the evaluation unit.

5. The device as claimed in claim 1 , wherein the transmitter and the receiver are included in a transmitter-receiver unit, the transmitter-receiver unit being configured to move over an entirety of the wafer stack parallel to the reference plane (R) to scan the entirety of the wafer stack.

6. The device as claimed in claim 1 , wherein the transmitter and the receiver are included in a transmitter-receiver unit, the transmitter-receiver unit being configured to scan the entirety of the wafer stack.

7. The device as claimed in claim 1 , wherein the transmitter, the receiver, and the evaluation unit are configured to operate at a distance (H) from the temporarily bonded wafer stack.

8. The device as claimed in claim 1 , wherein the transmitter and the receiver operate at the same time for measurement of the layer thicknesses and detection of the voids.

9. The device as claimed in claim 1 , wherein adjacent ones of the measuring points with a distance less than 5 mm are measured.

10. The device as claimed in claim 1 , wherein the transmitter, the receiver, and the evaluation unit are operated in-situ during a grinding process or a separating process.

11. The device as claimed in claim 1 , further comprising an interferometer mechanically coupled and fixed to the transmitter and the receiver, the interferometer being configured to measure a distance from the interferometer to a surface of a mount on at least one of the measuring points.

12. The device as claimed in claim 1 , wherein the transmitter and the receiver are aligned in a direction of the wafer stack parallel to the reference plane (R).

13. A wafer processing device for processing a temporarily bonded wafer stack, comprising:
a temporary bonding device configured to temporarily bond one or more layers to form the wafer stack, said layers comprising a structure wafer, a connecting layer of temporary adhesive, and a carrier wafer, the temporary bonding device being further configured to temporarily bond the structure wafer to the carrier wafer via the temporary adhesive connecting layer;
a measurement device arranged relative to a flat side of the wafer stack, the measurement device being configured to measure layer thickness and/or detect voids of the layers of the wafer stack at a plurality of measuring points distributed on the wafer stack, the measurement device comprising:
a housing configured to move relative to the wafer stack;
a transmitter positioned within said housing, said transmitter being configured to emit ultrasonic wave signals into the wafer stack; and
a receiver positioned within said housing proximate to said transmitter, said receiver being configured to receive signals that have been emitted by the transmitter and reflected on the wafer stack, evaluate the received signals, distinguish a group of the signals reflected by at least two transitions between the layers of the wafer stack, determine a distance of each signal of the group to one another and/or to a reference plane (R), and detect the movement of the wafer stack and/or the device parallel to the reference plane (R) and a position of each measuring point along the reference plane (R);

a mount for accommodating and fixing the wafer stack on one surface of the mount and for moving the fixed wafer stack parallel to the reference plane (R); and
a debonding device configured to detach the temporarily bonded structure wafer from the carrier wafer,
wherein the housing is further configured to immerse the transmitter and the receiver in a liquid applied to the wafer stack,
wherein the transmitter is further configured to emit the ultrasonic wave signals into the wafer stack while being immersed in the liquid by the housing, and
wherein the receiver is further configured to receive the reflected signals while being immersed in the liquid by the housing.

14. The device as claimed in claim 13 , wherein the housing is further configured to apply the liquid to the wafer stack.

15. The device as claimed in claim 13 , wherein the housing comprises a feed line through which the liquid is applied.

16. The device as claimed in claim 13 , wherein the housing is further configured to apply the liquid to a membrane protecting the wafer stack from the liquid.

17. The device as claimed in claim 16 , wherein the transmitter is further configured to inject the ultrasonic wave signals through the liquid and the membrane into the wafer stack.

18. A wafer processing device for processing a temporarily bonded wafer stack, comprising:
a temporary bonding device configured to temporarily bond one or more layers to form the wafer stack, said layers comprising a structure wafer, a connecting layer o

Assignees

• Wimplinger Markus
• Ev Group E Thallner Gmbh

Inventors

• Wimplinger Markus

Classifications

• H10P72/0616

  Monitoring of warpages, curvatures, damages, defects or the like · CPC title

• H10P74/203

  Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title

• H10P72/0604

  Process monitoring, e.g. flow or thickness monitoring · CPC title

• H10P74/23 Primary

  characterised by multiple measurements, corrections, marking or sorting processes · CPC title

• G01N29/275

  by moving both the sensor and the material · CPC title