Tungsten feature fill

Patent metadata

Field	Value
Publication number	US-10103058-B2
Application number	US-201715482271-A
Country	US
Kind code	B2
Filing date	Apr 7, 2017
Priority date	Aug 4, 2009
Publication date	Oct 16, 2018
Grant date	Oct 16, 2018

Abstract

Described herein are methods of filling features with tungsten and related systems and apparatus. The methods include inside-out fill techniques as well as conformal deposition in features. Inside-out fill techniques can include selective deposition on etched tungsten layers in features. Conformal and non-conformal etch techniques can be used according to various implementations. The methods described herein can be used to fill vertical features, such as in tungsten vias, and horizontal features, such as vertical NAND (VNAND) word lines. Examples of applications include logic and memory contact fill, DRAM buried word line fill, vertically integrated memory gate/word line fill, and 3-D integration with through-silicon vias (TSVs).

First claim

The invention claimed is:

1. A method comprising:
introducing an inhibition chemistry to a processing chamber, the processing chamber housing a substrate having a feature to be filled, the feature having a surface and a feature opening and a feature bottom; and
treating the surface of the feature with the inhibition chemistry in a mass-transport limited regime such the concentration of the inhibition chemistry and the inhibition rate are higher at the feature opening than inside the feature, wherein the treatment inhibits tungsten nucleation on the surface and wherein the inhibition is greater near the feature opening than inside the feature, and wherein there is no net etch during the treatment.

2. The method of claim 1 , further comprising, after treating the surface of the feature with the inhibition chemistry, depositing a tungsten-containing material in the feature wherein the deposition rate of the tungsten-containing material is greater inside the feature than at the feature opening.

3. The method of claim 2 , further comprising etching the tungsten-containing material in the feature.

4. The method of claim 1 , wherein the treating the surface of the feature forms a layer of material that is more prevalent at the feature opening than inside the feature.

5. The method of claim 1 , wherein the feature to be filled is partially filled with a tungsten-containing material and further comprising etching the tungsten-containing material in the feature prior to introducing the inhibition chemistry to the processing chamber.

6. A method comprising:
introducing an inhibition chemistry to a processing chamber, the processing chamber housing a substrate having a feature to be filled, the feature having a surface and a feature opening, such that the concentration of the inhibition chemistry and the inhibition rate are higher at the feature opening than inside the feature;
treating the surface of the feature with the inhibition chemistry, wherein the treatment inhibits tungsten nucleation on the surface and wherein the inhibition is greater near the feature opening than inside the feature; and
after treating the surface of the feature, depositing a tungsten-containing material inside the feature.

7. The method of claim 6 , further comprising etching the tungsten-containing material in the feature.

8. The method of claim 6 , wherein the treating the surface of the feature forms a layer of material that is more prevalent at the feature opening than inside the feature.

9. The method of claim 6 , wherein the feature to be filled is partially filled with tungsten further comprising etching tungsten in the feature prior to introducing the inhibition chemistry to the processing chamber.

10. The method of claim 6 , wherein treating the surface of the feature with the inhibition chemistry comprises a mass-transport limited regime.

11. The method of claim 6 , wherein there is no net etch during the treatment.

12. The method of claim 6 , where the treatment forms a layer of material on the feature surface.

13. A method comprising:
introducing an inhibition chemistry to a processing chamber, the processing chamber housing a substrate having a feature to be filled, the feature having a surface and a feature opening and a feature bottom; and
treating the surface of the feature with the inhibition chemistry such that the concentration of the inhibition chemistry and the inhibition rate are higher at the feature opening than inside the feature, wherein the treatment inhibits tungsten nucleation on the surface and wherein the inhibition is greater near the feature opening than inside the feature.

Assignees

• Novellus Systems Inc

Inventors

• Chandrashekar Anand
• Jeng Esther
• Humayun Raashina
• Danek Michal
• Gao Juwen
• Wang Deqi

Classifications

• H10W20/0595

  by using multiple deposition steps separated by etching steps · CPC title

• H10W20/0261

  characterised by the filling method or the material of the conductive fill · CPC title

• H10P95/00

  Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title

• H10P50/267

  using plasmas · CPC title

• H10P50/264

  by chemical means · CPC title