Method for growing silicon single crystal

Patent metadata

Field	Value
Publication number	US-10100430-B2
Application number	US-201314420806-A
Country	US
Kind code	B2
Filing date	Aug 5, 2013
Priority date	Aug 28, 2012
Publication date	Oct 16, 2018
Grant date	Oct 16, 2018

Abstract

A method for growing a silicon single crystal by a Czochralski method, includes: conducting preliminary examination of growth conditions under which crystal collapse does not occur, the preliminary examination being based on a correlation between presence or absence of the crystal collapse in the silicon single crystal and a position at which an internal stress in the crystal when the silicon single crystal is grown will exceed a prescribed threshold, the position being away from a crystal growth interface; and growing the silicon single crystal in accordance with the growth conditions under which the crystal collapse does not occur, the growth conditions being determined from the preliminary examination. The method can grow a silicon single crystal while crystal collapse is effectively prevented.

First claim

The invention claimed is:

1. A method for growing a silicon single crystal by a Czochralski method, comprising: conducting a preliminary examination of growth conditions under which crystal collapse does not occur, the preliminary examination being based on a correlation between presence or absence of the crystal collapse in the silicon single crystal and a position at which an internal stress in the crystal when the silicon single crystal is grown will exceed a prescribed threshold, the position being away from a crystal growth interface; and growing the silicon single crystal after adjusting the growth conditions based on the preliminary examination to prevent crystal collapse, wherein the silicon single crystal is grown with a growing apparatus comprising a cooling cylinder configured to surround the silicon single crystal and to forcibly cool the silicon single crystal with a cooling medium and an auxiliary cooling cylinder disposed so as to contact the cooling cylinder, the auxiliary cooling cylinder surrounding the silicon single crystal, and the growth conditions include a position of a lower end of at least one of the cooling cylinder and the auxiliary cooling cylinder, wherein the prescribed threshold is 1.27×10 4 exp(10170/T), where T is a crystal temperature (K).

2. The method for growing a silicon single crystal according to claim 1 , wherein the silicon single crystal is grown while a temperature gradient (G) of a central portion of the crystal near the crystal growth interface is equal to or more than 350/r (K/mm), where r is a crystal radius.

3. The method for growing a silicon single crystal according to claim 1 , wherein the silicon single crystal has a diameter of 300 mm or more.

4. The method for growing a silicon single crystal according to claim 2 , wherein the silicon single crystal has a diameter of 300 mm or more.

5. The method for growing a silicon single crystal according to claim 1 , wherein the cooling cylinder is made of a metal selected from a group consisting of iron, chromium, nickel, copper, titanium, molybdenum, and tungsten, or an alloy containing the metal, or the metal or the alloy coated with titanium, molybdenum, tungsten, or platinum metal.

6. The method for growing a silicon single crystal according to claim 1 , wherein the auxiliary cooling cylinder is made of a metal selected from a group consisting of a graphite material, a carbon composite, stainless steel, molybdenum, and tungsten and has a slit that axially penetrates.

7. The method for growing a silicon single crystal according to claim 5 , wherein the auxiliary cooling cylinder is made of a metal selected from a group consisting of a graphite material, a carbon composite, stainless steel, molybdenum, and tungsten and has a slit that axially penetrates.

8. The method for growing a silicon single crystal according to claim 1 , wherein the silicon single crystal is grown in such a manner that a cooling rate is 0.96° C./min or more when the temperature is decreased from a melting point of silicon to 950° C., the cooling rate is 0.88° C./min or more when the temperature is decreased from 1150° C. to 1080° C., and the cooling rate is 0.71° C./min or more when the temperature is decreased from 1050° C. to 950° C.

9. The method for growing a silicon single crystal according to claim 7 , wherein the silicon single crystal is grown in such a manner that a cooling rate is 0.96° C./min or more when the temperature is decreased from a melting point of silicon to 950° C., the cooling rate is 0.88° C./min or more when the temperature is decreased from 1150° C. to 1080° C., and the cooling rate is 0.71° C./min or more when the temperature is decreased from 1050° C. to 950° C.

10. The method for growing a silicon single crystal according to claim 1 , wherein the preliminary examination comprises measuring, for a plurality of growth conditions, whether the position is located a predetermined distance away from the crystal growth interface.

11. The method for growing a silicon single crystal according to claim 10 , wherein the predetermined distance is equal to or greater than the crystal radius.

Assignees

• Shinetsu Handotai Kk

Inventors

• Hoshi Ryoji
• Takazawa Masanori

Classifications

• C30B15/206

  the thermal history of growing the ingot · CPC title

• C30B15/22 Primary

  Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal · CPC title

• C30B15/14

  Heating of the melt or the crystallised materials · CPC title

• C30B29/06

  Silicon · CPC title

• C30B15/20 Primary

  Controlling or regulating (controlling or regulating in general G05) · CPC title