Crystal pulling system and methods for producing monocrystalline ingots with reduced edge band defects
US-2021340691-A1 · Nov 4, 2021 · US
the thermal history of growing the ingot
the thermal history of growing the ingot · Cooperative Patent Classification (CPC)
Chemical and metallurgical processes, compounds, and materials.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | C30B15/206 |
| Official title | {the thermal history of growing the ingot} |
| Display label | the thermal history of growing the ingot |
| Total patents | 123 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is declining.
| Year | Patents |
|---|---|
| 2015 | 5 |
| 2016 | 11 |
| 2017 | 8 |
| 2018 | 13 |
| 2019 | 9 |
| 2020 | 11 |
| 2021 | 17 |
| 2022 | 12 |
| 2023 | 13 |
| 2024 | 11 |
| 2025 | 12 |
| 2026 | 1 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size
US-10988859-B2 · Apr 27, 2021 · US
Single crystal silicon plate-shaped body
US-10975496-B2 · Apr 13, 2021 · US
Method of estimating oxygen concentration of silicon single crystal and method of manufacturing silicon single crystal
US-2020407870-A1 · Dec 31, 2020 · US
Method for controlling convection pattern of silicon melt, method for producing silicon single crystals, and device for pulling silicon single crystals
US-2020399783-A1 · Dec 24, 2020 · US
Method and apparatus for manufacturing silicon single crystal
US-10858753-B2 · Dec 8, 2020 · US
Single crystal of silicon with <100> orientation, which is doped with n-type dopant, and method for producing such a single crystal
US-2020270764-A1 · Aug 27, 2020 · US
N-type silicon single crystal production method, n-type silicon single crystal ingot, silicon wafer, and epitaxial silicon wafer
US-2020224329-A1 · Jul 16, 2020 · US
Mono-crystalline silicon growth apparatus
US-2020208295-A1 · Jul 2, 2020 · US
Semiconductor wafer of monocrystalline silicon and method of producing the semiconductor wafer
US-2020168712-A1 · May 28, 2020 · US
Method and apparatus for manufacturing silicon single crystal
US-2020165742-A1 · May 28, 2020 · US
Single crystal silicon production method, epitaxial silicon wafer production method, single crystal silicon, and epitaxial silicon wafer
US-2020135460-A1 · Apr 30, 2020 · US
Radio frequency silicon on insulator structure with superior performance, stability, and manufacturability
US-2020020571-A1 · Jan 16, 2020 · US
Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturability
US-2020020766-A1 · Jan 16, 2020 · US
Apparatus for controlling heat flow within a silicon melt
US-2019338442-A1 · Nov 7, 2019 · US
Silicon single crystal pulling condition calculation program, silicon single crystal hot zone improvement method, and silicon single crystal growing method
US-2019330760-A1 · Oct 31, 2019 · US
Apparatus for controlling heat flow within a silicon melt
US-2019284715-A1 · Sep 19, 2019 · US
Apparatus for controlling heat flow within a silicon melt
US-10415151-B1 · Sep 17, 2019 · US
Crystal growing systems and methods including a passive heater
US-10358740-B2 · Jul 23, 2019 · US
Temperature control device for single crystal ingot growth and temperature control method applied thereto
US-2019211471-A1 · Jul 11, 2019 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC C30B15/206?
- CPC C30B15/206 is the Cooperative Patent Classification code for “the thermal history of growing the ingot.”
- How many patents are filed under CPC C30B15/206 (the thermal history of growing the ingot)?
- Our database includes 123 publications tagged with this CPC code.
- Is patent activity under CPC C30B15/206 growing?
- Publication counts under this code: 11 in 2024 vs 12 in 2025 (latest complete years).