Chunk polycrystalline silicon and process for cleaning polycrystalline silicon chunks
US-9776876-B2 · Oct 3, 2017 · US
Method of supporting a growing single crystal during crystallization of the single crystal according to the FZ method
US10094042B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10094042-B2 |
| Application number | US-201514813287-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 30, 2015 |
| Priority date | Sep 3, 2014 |
| Publication date | Oct 9, 2018 |
| Grant date | Oct 9, 2018 |
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Abstract
Official abstract text for this publication.
A growing single crystal is supported in the region of a conical section of the single crystal via a supporting body during crystallization of the single crystal by the FZ method. The method comprises pressing the supporting body against the conical section of the growing single crystal at a temperature at which a first material of the supporting body becomes soft, and continuing pressing the supporting body against the conical section of the growing single crystal until the first material and a second material of the supporting body that remains hard at the cited temperature touch the conical section of the growing single crystal.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of supporting a growing single crystal in the region of a conical section of the single crystal via a supporting body during crystallization of the single crystal as prepared by the FZ method, comprising pressing a supporting body against the conical section of the growing single crystal at a temperature at which a first material of the supporting body becomes soft, and continuing pressing the supporting body against the conical section of the growing single crystal until the first material and a second material of the supporting body that remains hard at the cited temperature touch the conical section of the growing single crystal. 2. The method of claim 1 , wherein the first material is glass. 3. The method of claim 1 , wherein the first material is borosilicate glass. 4. The method of claim 1 , wherein the second material comprises a metal or a ceramic material. 5. The method of claim 2 , wherein the second material comprises a metal or a ceramic material. 6. The method of claim 3 , wherein the second material comprises a metal or a ceramic material. 7. The method of claim 1 , wherein the second material comprises steel or silicon nitride. 8. The method of claim 1 , wherein the second material comprises steel. 9. The method of claim 1 , wherein the second material comprises silicon nitride. 10. The method of claim 1 , wherein the supporting body comprises an outer cylindrical ring of the second material and an inner cylindrical ring of the first material, and the supporting body is pressed against the conical section of the growing single crystal until an interspace between an inner lateral surface of the outer ring and the growing single crystal is occupied by the first material and crystal ridges of the single crystal contact the inner lateral surface of the outer ring.
Assignees
Inventors
Classifications
Silicon · CPC title
- C30B13/00Primary
Single-crystal growth by zone-melting; Refining by zone-melting (C30B17/00 takes precedence; by changing the cross-section of the treated solid C30B15/00; under a protective fluid C30B27/00; for the growth of homogeneous polycrystalline material with defined structure C30B28/00) · CPC title
- C30B13/285Primary
Crystal holders, e.g. chucks · CPC title
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- What does patent US10094042B2 cover?
- A growing single crystal is supported in the region of a conical section of the single crystal via a supporting body during crystallization of the single crystal by the FZ method. The method comprises pressing the supporting body against the conical section of the growing single crystal at a temperature at which a first material of the supporting body becomes soft, and continuing pressing the s…
- Who is the assignee on this patent?
- Siltronic Ag
- What technology area does this patent fall under?
- Primary CPC classification C30B13/00. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Oct 09 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).