Method of manufacturing semiconductor material from mayenite
US-2020062606-A1 · Feb 27, 2020 · US
Single-crystal growth by zone-melting; Refining by zone-melting (C30B17/00 takes precedence; by changing the cross-section of the treated solid C30B15/00; under a protective fluid C30B27/00; for the growth of homogeneous polycrystalline material with defined structure C30B28/00)
Single-crystal growth by zone-melting; Refining by zone-melting (C30B17/00 takes precedence; by changing the cross-section of the treated solid C30B15/00; under a protective fluid C30B27/00; for the growth of homogeneous polycrystalline material with defined structure C30B28/00) · Cooperative Patent Classification (CPC)
Chemical and metallurgical processes, compounds, and materials.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | C30B13/00 |
| Official title | Single-crystal growth by zone-melting; Refining by zone-melting (C30B17/00 takes precedence; by changing the cross-section of the treated solid C30B15/00; under a protective fluid C30B27/00; for the growth of homogeneous polycrystalline material with defined structure C30B28/00) |
| Display label | Single-crystal growth by zone-melting; Refining by zone-melting (C30B17/00 takes precedence; by changing the cross-section of the treated solid C30B15/00; under a protective fluid C30B27/00; for the growth of homogeneous polycrystalline material with defined structure C30B28/00) |
| Total patents | 94 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is rapidly declining.
| Year | Patents |
|---|---|
| 2015 | 8 |
| 2016 | 13 |
| 2017 | 12 |
| 2018 | 13 |
| 2019 | 13 |
| 2020 | 9 |
| 2021 | 6 |
| 2022 | 10 |
| 2023 | 5 |
| 2024 | 3 |
| 2025 | 2 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Thallium bromide (TIBr) semiconductors and devices with extended life apparatus, methods, and system
US-10516068-B1 · Dec 24, 2019 · US
Polycrystalline silicon rod
US-2019367374-A1 · Dec 5, 2019 · US
Method for manufacturing a FZ silicon single crystal subject to additional gallium doping for solar cells
US-10487417-B2 · Nov 26, 2019 · US
Gallium oxide-doped crystalline material and preparation method and application thereof
US-2019352798-A1 · Nov 21, 2019 · US
Solid electrolyte material and all solid lithium ion secondary battery
US-2019341651-A1 · Nov 7, 2019 · US
Method and apparatus for producing a single-crystalline workpiece
US-2019255613-A1 · Aug 22, 2019 · US
Polycrystalline silicon rod, production method therefor, and FZ silicon single crystal
US-10343922-B2 · Jul 9, 2019 · US
Lithium lanthanum zirconium tantalum oxide garnet crystal and all-solid-state lithium ion secondary battery
US-10319985-B2 · Jun 11, 2019 · US
Polycrystalline silicon rod and method for producing single crystal silicon
US-2019119829-A1 · Apr 25, 2019 · US
Casting method and cast article
US-10265764-B2 · Apr 23, 2019 · US
Wafer supporting structure and method for forming the same
US-10190235-B2 · Jan 29, 2019 · US
Polycrystalline silicon rod and method for producing polycrystalline silicon rod
US-2019017193-A1 · Jan 17, 2019 · US
Fz silicon and method to prepare fz silicon
US-2019006190-A1 · Jan 3, 2019 · US
High throughput chemical vapor deposition electrode
US-10100439-B2 · Oct 16, 2018 · US
Method of supporting a growing single crystal during crystallization of the single crystal according to the FZ method
US-10094042-B2 · Oct 9, 2018 · US
Polycrystalline silicon, FZ single crystal silicon, and method for producing the same
US-10066320-B2 · Sep 4, 2018 · US
Method and apparatus for producing crystalline cladding and crystalline core optical fibers
US-10054735-B2 · Aug 21, 2018 · US
Resin material, vinyl bag, polycrystalline silicon rod, polycrystalline silicon mass
US-2018223450-A1 · Aug 9, 2018 · US
Method for the thermal treatment of granular material composed of silicon, granular material composed of silicon, and method for producing a monocrystal composed of silicon
US-2018194633-A1 · Jul 12, 2018 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC C30B13/00?
- CPC C30B13/00 is the Cooperative Patent Classification code for “Single-crystal growth by zone-melting; Refining by zone-melting (C30B17/00 takes precedence; by changing the cross-section of the treated solid C30B15/00; under a protective fluid C30B27/00; for the growth of homogeneous polycrystalline material with defined structure C30B28/00).”
- How many patents are filed under CPC C30B13/00 (Single-crystal growth by zone-melting; Refining by zone-melting (C30B17/00 takes precedence; by changing the cross-section of the treated solid C30B15/00; under a protective fluid C30B27/00; for the growth of homogeneous polycrystalline material with defined structure C30B28/00))?
- Our database includes 94 publications tagged with this CPC code.
- Is patent activity under CPC C30B13/00 growing?
- Publication counts under this code: 3 in 2024 vs 2 in 2025 (latest complete years).