Semiconductor device and manufacturing method for same, crystal, and manufacturing method for same
US-2016149005-A1 · May 26, 2016 · US
Substrate for epitaxial growth, and crystal laminate structure
US2016233307A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016233307-A1 |
| Application number | US-201514851210-A |
| Country | US |
| Kind code | A1 |
| Filing date | Sep 11, 2015 |
| Priority date | Sep 8, 2011 |
| Publication date | Aug 11, 2016 |
| Grant date | — |
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Abstract
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A crystal laminate structure includes an epitaxial growth substrate including a β-Ga 2 O 3 -based single crystal and a ( 010 ) plane or a plane inclined at an angle not more than 37.5° with respect to the ( 010 ) plane as a main surface thereof and a high electrical resistance, and an epitaxial crystal formed on the main surface of the epitaxial growth substrate. The epitaxial crystal includes a Ga-containing oxide.
First claim
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What is claimed is: 1 . A crystal laminate structure, comprising: an epitaxial growth substrate comprising a β-Ga 2 O 3 -based single crystal and a ( 010 ) plane or a plane inclined at an angle not more than 37.5° with respect to the ( 010 ) plane as a main surface thereof and a high electrical resistance; and an epitaxial crystal formed on the main surface of the epitaxial growth substrate, wherein the epitaxial crystal comprises a Ga-containing oxide. 2 . The crystal laminate structure according to claim 1 , wherein the epitaxial crystal comprises an n-type epitaxial crystal. 3 . The crystal laminate structure according to claim 2 , wherein the epitaxial crystal comprises an n-type β-Ga 2 O 3 single crystal. 4 . The crystal laminate structure according to claim 1 , wherein the epitaxial crystal comprises an i-type epitaxial crystal. 5 . The crystal laminate structure according to claim 4 , wherein the epitaxial crystal comprises an i-type β-Ga 2 O 3 single crystal. 6 . The crystal laminate structure according to claim 1 , wherein the epitaxial crystal comprises a crystal laminate structure in which a Ga 2 O 3 layer and a (AlGa) 2 O 3 layer are alternately formed.
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Classifications
P-type · CPC title
N-type · CPC title
being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title
Crystal orientations · CPC title
being semiconductor metal oxides (Group IIB-VIA materials H10P14/2913) · CPC title
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- What does patent US2016233307A1 cover?
- A crystal laminate structure includes an epitaxial growth substrate including a β-Ga 2 O 3 -based single crystal and a ( 010 ) plane or a plane inclined at an angle not more than 37.5° with respect to the ( 010 ) plane as a main surface thereof and a high electrical resistance, and an epitaxial crystal formed on the main surface of the epitaxial growth substrate. The epitaxial crystal includes …
- Who is the assignee on this patent?
- Tamura Seisakusho Kk
- What technology area does this patent fall under?
- Primary CPC classification C30B29/16. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Thu Aug 11 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).