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Chunk polycrystalline silicon and process for cleaning polycrystalline silicon chunks
US9776876B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9776876-B2 |
| Application number | US-201514927779-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 30, 2015 |
| Priority date | Feb 21, 2012 |
| Publication date | Oct 3, 2017 |
| Grant date | Oct 3, 2017 |
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- Title
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- Abstract
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Abstract
Official abstract text for this publication.
The invention provides chunk polycrystalline silicon having a concentration of carbon at the surface of 0.5-35 ppbw. A process for cleaning polycrystalline silicon chunks having carbon contaminations at the surface, includes a thermal treatment of the polycrystalline silicon chunks in a reactor at a temperature of 350 to 600° C., the polycrystalline silicon chunks being present in an inert gas atmosphere during the thermal treatment, and the polycrystalline silicon chunks after the thermal treatment having a concentration of carbon at the surface of 0.5-35 ppbw.
First claim
Opening claim text (preview).
What is claimed is: 1. Chunk polycrystalline silicon cleaned by a non-oxidative cleaning process such that the chunk polycrystalline silicon has a concentration of carbon of 0.5-20 ppbw at a surface thereof, wherein the non-oxidative cleaning process comprises non-oxidative pyrolysis. 2. The chunk polycrystalline silicon as claimed in claim 1 , wherein the concentration of carbon at the surface is 0.5-10 ppbw. 3. The chunk polycrystalline silicon as claimed in claim 1 , wherein the concentration of carbon at the surface is 0.5-5 ppbw. 4. Chunk polycrystalline silicon cleaned by a non-oxidative cleaning process such that the chunk polycrystalline silicon has a concentration of carbon of 0.5-20 ppbw at a surface thereof, wherein the non-oxidative cleaning process comprises vaporization. 5. The chunk polycrystalline silicon as claimed in claim 4 , wherein the concentration of carbon at the surface is 0.5-5 ppbw. 6. The chunk polycrystalline silicon as claimed in claim 4 , wherein the concentration of carbon at the surface is 0.5-10 ppbw.
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Classifications
by dry cleaning only (H10P70/52 takes precedence) · CPC title
- C01B33/02Primary
Silicon (forming single crystals or homogeneous polycrystalline material with defined structure C30B) · CPC title
Single-crystal growth by zone-melting; Refining by zone-melting (C30B17/00 takes precedence; by changing the cross-section of the treated solid C30B15/00; under a protective fluid C30B27/00; for the growth of homogeneous polycrystalline material with defined structure C30B28/00) · CPC title
Single-crystal growth by pulling from a melt, e.g. Czochralski method (under a protective fluid C30B27/00) · CPC title
Compositional purity · CPC title
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- What does patent US9776876B2 cover?
- The invention provides chunk polycrystalline silicon having a concentration of carbon at the surface of 0.5-35 ppbw. A process for cleaning polycrystalline silicon chunks having carbon contaminations at the surface, includes a thermal treatment of the polycrystalline silicon chunks in a reactor at a temperature of 350 to 600° C., the polycrystalline silicon chunks being present in an inert gas …
- Who is the assignee on this patent?
- Wacker Chemie Ag
- What technology area does this patent fall under?
- Primary CPC classification C01B33/02. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Oct 03 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).