Evaluation method for oxide semiconductor thin film, quality control method for oxide semiconductor thin film, and evaluation element and evaluation device used in the evaluation method

Patent metadata

Field	Value
Publication number	US-10090208-B2
Application number	US-201414654736-A
Country	US
Kind code	B2
Filing date	Jan 9, 2014
Priority date	Jan 11, 2013
Publication date	Oct 2, 2018
Grant date	Oct 2, 2018

Abstract

Provided are: a method for measuring and evaluating (predicting or estimating) stress stability of an oxide semiconductor thin film in a contactless manner; and a quality control method for an oxide semiconductor. This evaluation method comprises a first step and a second step. The first step includes: subjecting an oxide semiconductor thin film to irradiation with both excitation light and microwave radiation; stopping the irradiation with the excitation light after the maximum intensity of reflected wave of the microwave radiation, which varies with the irradiation of the excitation light, from the thin film has been observed; and thereafter measuring a variation in the reflectance with which the microwave radiation is reflected by the thin film. The second step includes: calculating, from the variation in the reflectance, a parameter that corresponds to slow attenuation observed about 1 μs after the stopping; and thus evaluating the stress stability of the oxide semiconductor.

First claim

The invention claimed is:

1. A method for identifying an oxide semiconductor thin film with desired stress stability, the method comprising:
irradiating both excitation light and microwave radiation to a specimen on which an oxide semiconductor thin film is formed,
measuring a maximum intensity of reflected wave of the microwave radiation, which varies with an irradiation of the excitation light, from the oxide semiconductor thin film, then
stopping the irradiation of the excitation light, and thereafter
measuring a variation in reflectance with time of the microwave radiation reflected by the oxide semiconductor thin film after the stopping,
calculating, from the variation in the reflectance, a parameter that corresponds to slow attenuation observed about 1 μs after the stopping for the oxide semiconductor thin film, and
identifying the oxide semiconductor thin film that has a value of the parameter within a predetermined range as the oxide semiconductor thin film with the desired stress stability.

2. The method according to claim 1 , wherein the stress stability of the oxide semiconductor thin film is evaluated by both the parameter corresponding to the slow attenuation of the reflectance of the microwave radiation observed about 1 μs after the stopping of the excitation light and the maximum intensity of reflectance of the microwave radiation.

3. The method according to claim 1 , wherein the parameter is a lifetime value.

4. The method according to claim 1 , wherein the oxide semiconductor thin film comprises at least one element selected from the group consisting of In Ga, Zn, and Sn.

5. The method according to claim 1 , wherein the oxide semiconductor thin film is deposited on a surface of a gate insulator film.

6. The method according to claim 1 , wherein a passivation film is formed on a surface of the oxide semiconductor thin film.

7. An evaluation element, comprising
a substrate,
the oxide semiconductor thin film identified by the method according to claim 1 ,
wherein the oxide semiconductor thin film is formed on the substrate.

8. The evaluation element according to claim 7 , wherein the oxide semiconductor thin film is formed directly on the substrate.

9. The evaluation element according to claim 7 , wherein the oxide semiconductor thin film is formed directly on a surface of a gate insulator film.

10. The evaluation element according to claim 7 , wherein a passivation film is formed on a surface of the oxide semiconductor thin film.

11. An evaluation device, comprising
a plurality of the evaluation elements according to claim 7 arrayed on a substrate.

12. The method according to claim 1 , wherein the parameter is
a time until the intensity of the reflected microwave attenuates to lie: of the maximum value;
a slope of a log-transformed intensity decay curve of the reflected microwave in a range of from 1/e to 1/e 2 of the maximum value, or an absolute value of inverse of the slope;
a slope of a decay curve of the reflected microwave in a range of about 1 μs to 2 μs after the stopping of the excitation light, or an absolute value of inverse of the slope;
an intensity of the reflected microwave observed about 1 μs after the stopping of the excitation light;
a lifetime value τ2 derived by parameter fitting to Expression (1) representing the reflectance of the microwave:
n 1 exp(− t/τ 1 )+ n 2 exp(− t/τ 2 )  Expression (1)

where t represents measurement time in second, n1 and n2 are constants, τ1 represents lifetime of carriers having a short time constant, and τ2 represents lifetime of carriers having a long time constant;
a lifetime value τ 2 derived by parameter fitting to Expression (2) representing the reflectance of the microwave:
n 1 exp(− t/τ 1 )+ n 2 exp(− t/τ 2 ) β   Expression (2)

where t represents measurement time in second, n 1 and n 2 are constants, τ 1 represents lifetime of carriers having a short time constant, τ 2 represents lifetime of carriers having a long time constant, and β represents a relaxation factor;
a lifetime value B derived by parameter fitting to Expression (3) representing the reflectance of the microwave:
y=A ×exp (−x/B)   Expression (3)

where y is reflectance, A is a constant, and x is measurement time; or
a lifetime value C derived by parameter fitting to Expression (4) representing the reflectance of the microwave:
y=A×x C   Expression (4)

where y is reflectance, A is a constant, and x is measurement time.

13. The method according to claim 1 , wherein the stress stability of the oxide semiconductor thin film represents resistance to stress caused by light irradiation and/or voltage application.

14. The method according to claim 13 , wherein the stress stability is defined as threshold voltage shift ΔV th of the oxide semiconductor thin film before and after applying the stress.

15. The method according to claim 1 , wherein the parameter is a lifetime ratio, and the predetermined range is 0.90 or smaller.

16. A method for controlling quality of an oxide semiconductor thin film in a manufacturing process of a semiconductor, the method comprising
irradiating both excitation light and microwave radiation to a specimen on which the oxide semiconductor thin film is formed,
measuring a maximum intensity of reflected wave of the microwave radiation, which varies with an irradiation of the excitation light, from the oxide semiconductor thin film, then
stopping the irradiation of the excitation light, and thereafter
measuring a variation in reflectance with time of the microwave radiation reflected by the oxide semiconductor thin film after the stopping,
calculating, from the variation in the reflectance, a parameter that corresponds to slow attenuation observed about 1 μs after the stopping for the oxide semiconductor thin film, and
controlling the quality of the oxide semiconductor thin film by identifying the oxide semiconductor thin film that has a value of the parameter within a predetermined range.

17. The method according to claim 16 , wherein the stress stability of the oxide semiconductor thin film represents resistance to stress caused by light irradiation and/or voltage application.

18. The method according to claim 17 , wherein the stress stability is defined as threshold voltage shift ΔV th of the oxide semiconductor thin film before and after applying the stress.

19. The method according to claim 16 , Wherein the parameter is a lifetime ratio, and the predetermined range is 0.90 or smaller.

20. A method for comparing stress stability of at least two oxide semiconductor thin films, the method comprising:
irradiating both excitation light and microwave radiation to a specimen on which each of the oxide semiconductor thin films is formed,
measuring a maximum intensity of reflected wave of the microwave radiation, which varies with an irradiation of the excitation light, from each of the oxide semiconductor thin films, then
stopping the irradiation of the excitation light, and thereafter
measuring a variation in reflectance with time of the microwave radiation reflected by each of the oxide semiconductor thin films after the stopping,
calculating, from the variation in the reflectance, a parameter that corresponds to slow attenuation observed about 1 μs after the stopping for each of the oxide semiconductor thin films, and
identifying the oxide semiconductor thin film that has a small value of the parameter as having a stress stability superior

Assignees

• Kobe Steel Ltd

Inventors

• Kishi Tomoya
• Hayashi Kazushi
• Kugimiya Toshihiro

Classifications

• H10P74/203 Primary

  Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title

• H01L22/12 Primary

  Electricity · mapped topic

• G01R31/2894

  Aspects of quality control [QC] (G01R31/31718 takes precedence; program control for QC G05B19/41875) · CPC title

• H01L29/78603

  Electricity · mapped topic

• H01L29/24

  Electricity · mapped topic