Method and system for edge-of-wafer inspection and review

Patent metadata

Field	Value
Publication number	US-10056224-B2
Application number	US-201615231728-A
Country	US
Kind code	B2
Filing date	Aug 8, 2016
Priority date	Aug 10, 2015
Publication date	Aug 21, 2018
Grant date	Aug 21, 2018

Abstract

An electron-optical system for inspecting or reviewing an edge portion of a sample includes an electron beam source configured to generate one or more electron beams, a sample stage configured to secure the sample and an electron-optical column including a set of electron-optical elements configured to direct at least a portion of the one or more electron beams onto an edge portion of the sample. The system also includes a sample position reference device disposed about the sample and a guard ring device disposed between the edge of the sample and the sample position reference device to compensate for one or more fringe fields. One or more characteristics of the guard ring device are adjustable. The system also includes a detector assembly configured to detect electrons emanating from the surface of the sample.

First claim

What is claimed:

1. A electron-optical system comprising:
an electron beam source configured to generate one or more electron beams;
a sample stage configured to secure a sample;
an electron-optical column including a set of electron-optical elements configured to direct at least a portion of the one or more electron beams onto an edge portion of the sample;
a sample position reference device disposed about the sample;
a guard ring device disposed between the edge of the sample and the sample position reference device to compensate for one or more fringe fields, wherein a height of the guard ring device is adjustable; and
a detector assembly configured to detect electrons emanating from the sample.

2. The system of claim 1 , wherein the guard ring device comprises:
a conductive ring structure.

3. The system of claim 1 , wherein the guard ring device comprises:
a ring structure coated with a conductive material.

4. The system of claim 1 , wherein the height of the guard ring device is adjustable along a direction perpendicular to the surface of the sample.

5. The system of claim 1 , further comprising:
an actuator mechanically coupled to the guard ring device; and
a controller communicatively coupled to the actuator, wherein the controller is configured to direct the actuator to adjust the height of the guard ring device.

6. The system of claim 5 , wherein the adjustment of the height of the guard ring device causes at least one of a redistribution or reduction of the one or more fringe fields in the electron-optical system.

7. The system of claim 6 , wherein the adjustment of the height of the guard ring device causes a reduction in distortion of the one or more electron beams at the sample.

8. The system of claim 6 , wherein the adjustment of the height of the guard ring device causes a reduction in axial astigmatism of the one or more electron beams.

9. The system of claim 6 , wherein the adjustment of the height of the guard ring device causes a reduction in off-axis blur of the one or more electron beams.

10. The system of claim 1 , wherein a voltage of the guard ring device is adjustable.

11. The system of claim 10 , further comprising:
voltage control circuitry electrically coupled to the guard ring device; and
a controller communicatively coupled to the voltage control circuitry, wherein the controller is configured to direct the voltage control circuitry to adjust the voltage of the guard ring device.

12. The system of claim 11 , wherein the adjustment of the voltage of the guard ring device causes at least one of a redistribution or reduction of the one or more fringe fields in the electron-optical system.

13. The system of claim 12 , wherein the adjustment of the voltage of the guard ring device causes a reduction in off-axis blur of the one or more electron beams.

14. The system of claim 12 , wherein the adjustment of the voltage of the guard ring device causes a reduction in distortion of the one or more electron beams at the sample.

15. The system of claim 12 , wherein the adjustment of the voltage of the guard ring device causes a reduction in axial astigmatism of the one or more electron beams.

16. The system of claim 10 , wherein the height of the guard ring device and the voltage of the guard ring device are simultaneously adjusted.

17. The system of claim 1 , wherein the sample position reference device comprises:
one or more mirror plates.

18. The system of claim 1 , wherein the electron beam source comprises:
one or more electron guns.

19. The system of claim 1 , wherein the set of electron-optical elements comprises:
one or more objective lenses.

20. The system of claim 19 , wherein the set of electron-optical elements comprises:
one or more grounding devices positioned at least proximately to the one or more objective lenses.

21. The system of claim 1 , wherein the set of electron-optical elements comprises:
one or more condensing lenses.

22. The system of claim 1 , wherein the set of electron-optical elements comprises:
one or more scanning elements.

23. The system of claim 1 , wherein the sample comprises:
a wafer.

24. The system of claim 1 , wherein the detector assembly comprises:
at least one of one or more secondary electron detectors or one or more backscattered electron detectors.

25. The system of claim 1 , wherein the electron-optical system comprises
at least one of an electron beam inspection system or an electron beam review system.

26. An apparatus for fringe field compensation comprising:
a guard ring device for compensating for one or more fringe fields in an electron-optical system, wherein the guard ring device is disposed between an edge portion of a sample and a sample position reference device, wherein a height of the guard ring device is adjustable; and
a controller, wherein the controller is configured to adjust at least the height of the guard ring device so as to cause the guard ring device to compensate for the one or more fringe fields in the electron-optical system.

27. A electron-optical system comprising:
an electron beam source configured to generate one or more electron beams;
a sample stage configured to secure a sample;
an electron-optical column including a set of electron-optical elements configured to direct at least a portion of the one or more electron beams onto an edge portion of the sample;
one or more mirror plates disposed about the sample;
a guard ring device disposed between the edge of the sample and the one or more mirror plates to compensate for one or more fringe fields, wherein at least one of a voltage or a height of the guard ring device are adjustable; and
a detector assembly configured to detect electrons emanating from the surface of the sample.

Assignees

• Kla Tencor Corp

Inventors

• Jiang Xinrong
• Sears Christopher
• Sinha Harsh
• Trease David
• Kaz David
• Ye Wei

Classifications

• H01J2237/1536

  Image distortions due to scanning · CPC title

• H01J2237/1534

  Aberrations · CPC title

• G01N23/2255 Primary

  using incident ion beams, e.g. proton beams · CPC title

• G01N21/9501

  Semiconductor wafers (manufacturing processes per se of semiconductor devices implementing a measuring step H10P74/20) · CPC title

• H01J37/153 Primary

  Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators · CPC title