Mask blank, method for manufacturing mask blank and transfer mask

Patent metadata

Field	Value
Publication number	US-10042247-B2
Application number	US-201515511555-A
Country	US
Kind code	B2
Filing date	Aug 25, 2015
Priority date	Sep 25, 2014
Publication date	Aug 7, 2018
Grant date	Aug 7, 2018

Abstract

There is provided a mask blank including on a substrate: a thin film for forming a transfer pattern; a resist underlayer formed on the thin film and made of a resist underlayer composition containing a polymer having a unit structure having a lactone ring and a unit structure having a hydroxyl group; a resist film formed on the resist underlayer film and made of a resist composition; and a mixed film formed so as to be interposed between the resist underlayer film and the resist film and made of a mixed component containing the resist underlayer composition and the resist composition.

First claim

The invention claimed is:

1. A mask blank, comprising:
a substrate;
a thin film for forming a transfer pattern on the substrate;
a resist underlayer film provided on the thin film and made of a resist underlayer composition containing a polymer having a unit structure having a lactone ring and a unit structure having a hydroxyl group;
a resist film provided on the resist underlayer film and made of a resist composition; and
a mixed film provided so as to be interposed between the resist underlayer film and the resist film and made of a mixed component containing the resist underlayer composition and the resist composition.

2. The mask blank according to claim 1 , wherein the polymer further contains a unit structure having an aryl group or an arylalkyl group.

3. The mask blank according to claim 1 , wherein the polymer contains a copolymer unit structure comprising repeating units of lactone (meth) acrylate and hydroxyalkyl (meth) acrylate.

4. The mask blank according to claim 1 , wherein the polymer contains a copolymer unit structure comprising repeating units of lactone (meth) acrylate, hydroxyalkyl (meth) acrylate and phenyl (meth) acrylate or benzyl (meth) acrylate.

5. The mask blank according to claim 1 , wherein the polymer is a polymer represented by formula (1) including a unit structure of formula (1-1) and a unit structure of formula (1-2), or a polymer represented by formula (2) including a unit structure of formula (2-1) and a unit structure of formula (2-2) and a unit structure of formula (2-3),

wherein, R 1 , R 2 , R 3 , R 4 and R 5 each represents a hydrogen atom or a methyl group, L 2 and L 4 each represents a hydroxyalkyl group having 1 to 10 carbon atoms, L 5 represents a phenyl group or a benzyl group, L 1 and L 3 each represents formula (L1-1) or formula (L1-2),

wherein, a dotted line indicates a bond with the unit structure of the polymer.

6. The mask blank according to claim 1 , wherein the resist underlayer composition further contains polynuclear phenol.

7. The mask blank according to claim 6 , wherein the polynuclear phenol is at least one of a compound represented by formula (b-1), a compound represented by formula (b-2), or a compound represented by formula (b 3),

wherein, in formula (b-1), each R 11 is a substituent of a hydrogen atom of a benzene ring, and is an organic group composed of a hydroxyl group, a halogen group, an alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 18 carbon atoms, an arylalkyl group having 7 to 25 carbon atoms, an alkylcarbonyl group having 2 to 10 carbon atoms, an alkylcarbonyloxy group having 2 to 10 carbon atoms, an alkylcarbonylamino group having 2 to 10 carbon atoms, an aryloxyalkyl group having 7 to 10 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, or a combination thereof, and R 12 represents a single bond, or a divalent to tetravalent hydrocarbon group having 1 to 10 carbon atoms which may be substituted with halogen atoms, a divalent to tetravalent arylalkyl group having 7 to 25 carbon atoms which may be substituted with halogen atoms, or a sulfonyl group, m1 is an integer of 1 to 5, and n1 is an integer of 0≤n1≤5−m1, and q is an integer of 2 to 4,

wherein, R 13 and R 14 in formula (b-2) are the same as R 11 in formula (b-1) respectively, and R 15 represents a single bond or a divalent to hexavalent hydrocarbon group having 1 to 10 carbon atoms which may be substituted with halogen atoms, a divalent to hexavalent arylalkyl group having 7 to 25 carbon atoms which may be substituted with halogen atoms, or a sulfonyl group, m2 and m3 is an integer of 1 to 5, n2 and n3 are integers of 0≤n2≤5−m2 and 0≤n3≤5−m3, and k and s are each independently an integer of 1 to 3

wherein, R 16 , R 17 , and R 18 in formula (b-3) are the same as R 11 in formula (b-1) respectively, and R 19 and R 20 represent a single bond or a divalent hydrocarbon group having 1 to 10 carbon atoms which may be substituted with halogen atoms, a divalent arylalkyl group having 7 to 25 carbon atoms which may be substituted with halogen atoms, or a sulfonyl group, m5 is an integer of 1 to 4, m4 and m6 are integers of 1 to 5 respectively, n5 is 0≤n5≤4−m5, n4 and n6 are integers of 0≤n4≤5−m4 and 0≤n6≤5−m6 respectively, and t is an integer of 1 to 4.

8. The mask blank according to claim 1 , wherein the resist underlayer composition further contains a crosslinking compound.

9. The mask blank according to claim 1 , wherein the resist underlayer composition further contains an acid compound.

10. A method for manufacturing a mask blank, comprising:
forming a thin film for forming a transfer pattern on a substrate;
forming a resist underlayer film on the thin film by applying a resist underlayer composition containing a polymer including a unit structure having a lactone ring and a unit structure having a hydroxyl group and heating the same; and
forming a resist film by applying a resist composition on the resist underlayer film and heating the same,
wherein in forming the resist film, a surface layer portion of the resist underlayer film is dissolved by applying the resist composition on the resist underlayer film, and a mixed component of a dissolved component of the resist underlayer film and the resist composition is formed on an interface between the resist underlayer film and the applied resist composition, and
the resist film is formed by heating the mixed component together with the resist composition, and a mixed film is formed so as to be interposed between the resist underlayer film and the resist film.

11. A method for manufacturing a transfer mask, comprising:
forming a resist pattern by exposing and developing the resist film and the mixed film of the mask blank manufactured by the method for manufacturing a mask blank of claim 10 ; and
forming a transfer pattern on the substrate by etching the resist underlayer film and the thin film using the resist pattern as a mask.

Assignees

• Hoya Corp
• Nissan Chemical Ind Ltd

Inventors

• Hiromatsu Takahiro
• Hashimoto Masahiro
• Sakaida Yasushi
• Mizuochi Ryuta
• Sakamoto Rikimaru
• Nagai Masaki

Classifications

• H10P76/2041

  Photolithographic processes · CPC title

• H10P76/00

  Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography · CPC title

• H10P50/692

  characterised by their composition, e.g. multilayer masks or materials · CPC title

• H10P50/283

  by chemical means · CPC title

• G03F1/80

  Etching · CPC title