Mask blank and transfer mask

Patent metadata

Field	Value
Publication number	US-2016274457-A1
Application number	US-201415031877-A
Country	US
Kind code	A1
Filing date	Sep 26, 2014
Priority date	Nov 13, 2013
Publication date	Sep 22, 2016
Grant date	—

Abstract

A mask blank, including: a thin film for forming a transfer pattern; a resist underlying film made of a resist underlying composition and provided on the thin film; a resist film made of a chemically amplified resist and provided on the resist underlying film; and a mixture film provided so as to be interposed between the resist underlying film and the resist film, wherein the resist underlying film is configured so that a molecular weight is reduced from the thin film side to the resist film side in a thickness direction, and has a low molecular weight region in which the molecular weight is low on the resist film side surface, and the mixture film is formed by mixing a component of the low molecular weight region and a component of the chemically amplified resist.

First claim

1 . A mask blank, comprising:
a thin film for forming a transfer pattern; a resist underlying film made of a resist underlying composition and provided on the thin film; a resist film made of a chemically amplified resist and provided on the resist underlying film; and a mixture film provided so as to be interposed between the resist underlying film and the resist film, wherein the resist underlying film is configured so that a molecular weight is reduced from the thin film side to the resist film side in a thickness direction, and has a low molecular weight region in which the molecular weight is low on the resist film side surface, and the mixture film is formed by mixing a component of the low molecular weight region and a component of the chemically amplified resist.

2 . The mask blank according to claim 1 , wherein a thickness of the mixture film is 0.1 nm or more and 10 nm or less.

3 . The mask blank according to claim 1 , wherein the resist underlying composition contains at least one kind or more of an organic solvent having a boiling point of 100° C. or more.

4 . The mask blank according to claim 3 , wherein the resist underlying composition contains a crosslinking agent, and a crosslinking start temperature is lower than the boiling point of at least one kind of the organic solvent.

5 . The mask blank according to claim 1 , wherein the resist underlying composition contains a base polymer and a crosslinking catalyst, and contains 0.05 mass % or more and 10 mass % or less of the crosslinking catalyst based on 100 mass % of the base polymer.

6 . A transfer mask, wherein a transfer pattern is formed on the thin film of the mask blank of claim 1 .

Assignees

• Hoya Corp
• Nissan Chemical Ind Ltd

Inventors

• Hiromatsu Takahiro
• Hashimoto Masahiro
• Sakaida Yasushi
• Mizuochi Ryuta
• Sakamoto Rikimaru
• Nagai Masaki

Classifications

• G03F1/82

  Auxiliary processes, e.g. cleaning or inspecting · CPC title

• G03F1/50 Primary

  Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof · CPC title

• G03F7/32

  Liquid compositions therefor, e.g. developers · CPC title

• G03F7/11

  having cover layers or intermediate layers, e.g. subbing layers {(G03F7/091 - G03F7/093, B41N3/03 take precedence)} · CPC title

• G03F1/66

  Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof · CPC title