Method for manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-9256128-B2
Application number	US-201414490517-A
Country	US
Kind code	B2
Filing date	Sep 18, 2014
Priority date	Mar 12, 2013
Publication date	Feb 9, 2016
Grant date	Feb 9, 2016

Abstract

A system and method for anti-reflective layers is provided. In an embodiment the anti-reflective layer comprises a floating component in order to form a floating region along a top surface of the anti-reflective layer after the anti-reflective layer has dispersed. The floating component may be a floating cross-linking agent, a floating polymer resin, or a floating catalyst. The floating cross-linking agent, the floating polymer resin, or the floating catalyst may comprise a fluorine atom. The anti-reflective layers are removed using a fluid.

First claim

What is claimed is:

1. A method of manufacturing a semiconductor device, the method comprising:
dispensing an anti-reflective material over a substrate to form an anti-reflective coating, the anti-reflective material having a first concentration of a floating component;
forming a floating region adjacent to a top surface of the anti-reflective coating, the floating region being at least 10 Å thick and having a second concentration of the floating component greater than the first concentration, wherein after the forming the floating region a second component has a constant concentration throughout the anti-reflective coating;
applying a fluid to the anti-reflective coating to remove the anti-reflective material and the floating region.

2. The method of claim 1 , wherein the applying the fluid applies an aqueous solution.

3. The method of claim 2 , wherein the aqueous solution has a pH of between about −1 and about 4.

4. The method of claim 2 , wherein the aqueous solution has a pH of between about 9 and about 14.

5. The method of claim 1 , wherein the applying the fluid applies an organic solvent.

6. The method of claim 1 , wherein the fluid comprises an inorganic acid.

7. The method of claim 1 , wherein the applying the fluid is performed for less than one minute to remove the anti-reflective material.

8. A method of manufacturing a semiconductor device, the method comprising:
applying an anti-reflective coating onto a substrate;
forming from the anti-reflective coating a first region with a first rate of removal and a first thickness of at least 10 Å along a top surface of the anti-reflective coating, wherein a second region of the anti-reflective coating has a second rate of removal different from the first rate of removal, wherein after the forming the first region the anti-reflective coating has at least one component that has a constant concentration throughout the anti-reflective coating and the first region; and
removing the first region and the second region by applying a fluid to the anti-reflective coating.

9. The method of claim 8 , further comprising patterning the anti-reflective coating prior to removing the first region and the second region.

10. The method of claim 8 , wherein the applying the fluid applies an aqueous solution.

11. The method of claim 10 , wherein the aqueous solution has a pH of between about −1 and about 4.

12. The method of claim 10 , wherein the aqueous solution has a pH of between about 9 and about 14.

13. The method of claim 8 , wherein the applying the fluid applies an organic solvent.

14. The method of claim 8 , wherein the fluid comprises an inorganic acid.

15. The method of claim 8 , wherein the removing the first region and the second region is completed within one minute.

16. A method of manufacturing a semiconductor device, the method comprising:
applying an anti-reflective coating onto a substrate, the anti-reflective coating comprising at least one component that has a fluorine atom;
forming a floating region along a top surface of the anti-reflective coating, wherein the floating region has a higher concentration of the at least one component than a remainder of the anti-reflective coating, wherein the higher concentration is between about 0.01% and about 10%; and
removing the floating region and the remainder of the anti-reflective coating by applying a fluid to the anti-reflective coating for less than one minute.

17. The method of claim 16 , wherein the fluid is an aqueous solution.

18. The method of claim 17 , wherein the aqueous solution has a pH of between about −1 and about 4.

19. The method of claim 17 , wherein the aqueous solution has a pH of between about 9 and about 14.

20. The method of claim 16 , wherein the fluid is an organic solvent.

Assignees

• Taiwan Semiconductor Mfg

Inventors

• Chang Ching-Yu
• Liu Chen-Yu

Classifications

• H10P76/2043

  using an anti-reflective coating · CPC title

• H10P70/23

  during, before or after processing of insulating materials · CPC title

• H10P50/287

  by chemical means · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P14/6546

  to change the surface groups of the insulating materials · CPC title