Photoresist and method of manufacture

Patent metadata

Field	Value
Publication number	US-9543147-B2
Application number	US-201514849154-A
Country	US
Kind code	B2
Filing date	Sep 9, 2015
Priority date	Mar 12, 2013
Publication date	Jan 10, 2017
Grant date	Jan 10, 2017

Abstract

A system and method for anti-reflective layers is provided. In an embodiment the anti-reflective layer comprises a floating additive in order to form a floating additive region along a top surface of the anti-reflective layer after the anti-reflective layer has dispersed. The floating additive may comprise an additive group which will decompose along with a fluorine unit bonded to the additive group which will decompose. Additionally, adhesion between the middle layer and the photoresist may be increased by applying an adhesion promotion layer using either a deposition process or phase separation, or a cross-linking may be performed between the middle layer and the photoresist.

First claim

What is claimed is:

1. A method comprising:
dispensing an anti-reflective material over a semiconductor substrate to form an anti-reflective coating layer, the anti-reflective material having a first concentration of a floating additive, wherein the floating additive further comprises:
a group to be decomposed; and
a fluorine group bonded to the group to be decomposed;

forming a floating region adjacent to a top surface of the anti-reflective coating layer, the floating region having a second concentration of the floating additive greater than the first concentration and a thickness of at least 100 Å; and
placing, exposing and developing a photoresist over the floating region.

2. The method of claim 1 , wherein the group to be decomposed further comprises an acid labile group.

3. The method of claim 1 , wherein the floating region further comprises a catalyst.

4. The method of claim 3 , wherein the catalyst is a thermal acid generator.

5. The method of claim 4 , further comprising baking the floating region, wherein the baking the floating region initiates a reaction between the thermal acid generator and the floating additive which cleaves the group to be decomposed.

6. The method of claim 1 , wherein the fluorine group is a substituted fluorine.

7. The method of claim 1 , further comprising applying a middle layer to the floating region.

8. A method of manufacturing a semiconductor device, the method comprising:
applying a middle layer to a bottom layer over a substrate;
applying an adhesion promotion layer to the middle layer, wherein the applying the adhesion promotion layer is performed in a separate step than the applying the middle layer;
applying a photoresist to the adhesion promotion layer; and
exposing and developing the photoresist.

9. The method of claim 8 , wherein the adhesion promotion layer comprises an organic polymer.

10. The method of claim 9 , wherein the organic polymer comprises methacrylate.

11. The method of claim 10 , wherein the adhesion promotion layer comprises an inorganic layer.

12. The method of claim 11 , wherein the inorganic layer comprises a silicon containing polymer.

13. The method of claim 11 , wherein the inorganic layer comprises a metal containing polymer.

14. A method of manufacturing a semiconductor device, the method comprising:
applying a middle layer to a bottom layer, the bottom layer being over a substrate, wherein the middle layer comprises a first cross-linking group;
applying a photoresist to the middle layer, wherein the photoresist comprises a second cross-linking group;
cross-linking the first cross-linking group to the second cross-linking group; and
exposing and developing the photoresist after the cross-linking the first cross-linking group to the second cross-linking group.

15. The method of claim 14 , further comprising cleaving a bond within the first cross-linking group after the cross-linking the first cross-linking group to the second cross-linking group.

16. The method of claim 15 , wherein the cleaving the bond within the first cross-linking group is performed by irradiating a light sensitive group.

17. The method of claim 15 , wherein the cleaving the bond within the first cross-linking group is performed by cleaving an acid labile group.

18. The method of claim 14 , wherein the cross-linking the first cross-linking group to the second cross-linking group is performed at least in part by irradiating a light sensitive group.

19. The method of claim 14 , wherein the cross-linking the first cross-linking group to the second cross-linking group is performed at least in part with an acid-catalyzed reaction.

20. A method of manufacturing a semiconductor device, the method comprising:
applying a middle layer to a substrate having a bottom layer;
performing a phase separation within the middle layer to form a separation region along a top surface of the middle layer;
adhering a photoresist to the separation region; and
exposing and developing the photoresist.

21. The method of claim 20 , wherein the performing the phase separation separates a silicon-containing material from an organic material.

22. The method of claim 20 , wherein the performing the phase separation separates a first silicon-containing material from a second silicon-containing material.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Liu Chen-Yu
• Chang Ching-Yu
• Chen Chien-Chih
• Chen Yen-Hao

Classifications

• H10P50/695

  characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask · CPC title

• H10P50/692

  characterised by their composition, e.g. multilayer masks or materials · CPC title

• H10P50/287

  by chemical means · CPC title

• H10P14/683

  carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC · CPC title

• H10P76/2043 Primary

  using an anti-reflective coating · CPC title