Anti-reflective layer and method

Patent metadata

Field	Value
Publication number	US-9436086-B2
Application number	US-201615005435-A
Country	US
Kind code	B2
Filing date	Jan 25, 2016
Priority date	Mar 12, 2013
Publication date	Sep 6, 2016
Grant date	Sep 6, 2016

Abstract

A system and method for anti-reflective layers is provided. In an embodiment the anti-reflective layer comprises a floating component in order to form a floating region along a top surface of the anti-reflective layer after the anti-reflective layer has dispersed. The floating component may be a floating cross-linking agent, a floating polymer resin, or a floating catalyst. The floating cross-linking agent, the floating polymer resin, or the floating catalyst may comprise a fluorine atom.

First claim

What is claimed is:

1. A method of manufacturing a semiconductor device, the method comprising:
applying an anti-reflective coating onto a substrate, the anti-reflective coating comprising a first component and a second component, wherein prior to the applying the anti-reflective coating the first component has a constant concentration within the anti-reflective coating; and
forming a first region and a second region within the anti-reflective coating, wherein the first region comprises a first concentration of the first component and a second concentration of the second component and wherein the second region comprises a third concentration of the first component and the second concentration of the second component, wherein the first concentration is at least 0.01% and the third concentration is different from the first concentration.

2. The method of claim 1 , further comprising initiating a cross-linking within the first region after the forming the first region and the second region, wherein the second region has a first height prior to the initiating the cross-linking and has the first height subsequent to the initiating the cross-linking.

3. The method of claim 1 , wherein the first concentration is less than about 10%.

4. The method of claim 3 , wherein prior to the applying the anti-reflective coating onto the substrate the anti-reflective coating has a fourth concentration of the first component, the fourth concentration between about 0.01% and about 30%.

5. The method of claim 3 , wherein the first concentration is less than about 5%.

6. The method of claim 1 , wherein the first region has a thickness of at least 10 Å.

7. The method of claim 1 , further comprising initiating a cross-linking within the first region after the forming the first region and the second region, wherein the second region has a first hydrophilicity prior to the initiating the cross-linking and has the first hydrophilicity after the initiating the cross-linking.

8. A method of manufacturing a semiconductor device, the method comprising:
forming fins located over a substrate;
dispensing a bottom anti-reflective coating onto the fins, wherein the bottom anti-reflective coating is dispensed between the fins and comprises a first concentration of a first component as the bottom anti-reflective coating is dispensed; and
forming a floating region within the bottom anti-reflective coating, wherein the floating region has a thickness of at least 10 Å and the first component has a second concentration larger than the first concentration within the floating region than a region outside of the floating region, and wherein a second component different from the first component has a constant concentration throughout both the floating region and outside of the floating region.

9. The method of claim 8 , wherein the first concentration is between about 0.1% and about 60%.

10. The method of claim 8 , wherein the first concentration is between about 0.01% and about 30%.

11. The method of claim 10 , wherein the second concentration is between about 0.01 and about 10%.

12. The method of claim 11 , wherein the first component has a third concentration outside of the floating region that is less than about 5%.

13. The method of claim 8 , further comprising initiating a cross-linking reaction within the floating region after the forming the floating region, wherein the region outside of the floating region experiences no shrinkage during the cross-linking reaction.

14. The method of claim 8 , further comprising:
placing a photoresist onto the floating region after the forming the floating region; and
patterning the bottom anti-reflective coating after the placing the photoresist.

15. A method of manufacturing a semiconductor device, the method comprising:
dispensing an anti-reflective material between a first fin and a second fin, wherein the first fin and the second fin comprise semiconductor material;
waiting until a first component within the anti-reflective material forms a floating region with a thickness of at least 10 Å within the anti-reflective material, wherein the first component has a concentration within the floating region of between about 0.01% to about 10%;
applying a photoresist over the floating region; and
patterning the anti-reflective material while the photoresist is located over the anti-reflective material.

16. The method of claim 15 , wherein the anti-reflective material has a concentration of the first component of between about 0.01% to about 30% prior to the dispensing the anti-reflective material.

17. The method of claim 15 , wherein the patterning the anti-reflective material comprises applying a developer to the anti-reflective material.

18. The method of claim 15 , wherein the patterning the anti-reflective material comprises an etching process.

19. The method of claim 15 , wherein the anti-reflective material has a concentration of the first component of between about 0.01% to about 60% prior to the dispensing the anti-reflective material and wherein the first component is a floating polymer.

20. The method of claim 15 , wherein the first component has a concentration outside of the floating region of less than about 5%.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Su Yu-Chung
• Chang Ching-Yu
• Wang Wen-Yun

Classifications

• H10P76/2043

  using an anti-reflective coating · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P14/6546

  to change the surface groups of the insulating materials · CPC title

• H10P14/6534

  by exposure to a liquid · CPC title

• H01L21/02359

  Electricity · mapped topic