Photovoltaic cell and photovoltaic cell manufacturing method

Patent metadata

Field	Value
Publication number	US-10008627-B2
Application number	US-201615229320-A
Country	US
Kind code	B2
Filing date	Aug 5, 2016
Priority date	Nov 26, 2012
Publication date	Jun 26, 2018
Grant date	Jun 26, 2018

Abstract

A photovoltaic cell manufacturing method includes depositing a first buffer layer for performing lattice relaxation on a first silicon substrate; depositing a first photoelectric conversion cell on the first buffer layer, the first photoelectric conversion cell being formed with a compound semiconductor including a pn junction, and the first photoelectric conversion cell having a lattice constant that is higher than that of silicon; connecting a support substrate to the first photoelectric conversion cell to form a first layered body; and removing the first buffer layer and the first silicon substrate from the first layered body.

First claim

The invention claimed is:

1. A photovoltaic cell manufacturing method comprising:
depositing a first buffer layer on a first silicon substrate, for performing lattice relaxation;
depositing a first photoelectric conversion cell on the first buffer layer,
the first photoelectric conversion cell being formed by a compound semiconductor that includes a pn junction, and the first photoelectric conversion cell having a lattice constant that is higher than a lattice constant of the first silicon substrate, wherein
the lattice relaxation by the first buffer layer disposed between the first silicon substrate and the first photoelectric conversion cell relaxes a difference between the lattice constant of the first silicon substrate and the lattice constant of the first photoelectric conversion cell;
forming a second photoelectric conversion cell on a second silicon substrate;
forming a layered body including the first silicon substrate, the first buffer layer, the first photoelectric conversion cell deposited on the first buffer layer and having the lattice constant that is higher than that of the first silicon substrate on which the first buffer layer was deposited, the second photoelectric conversion cell, and the second silicon substrate, by bonding the first photoelectric conversion cell and the second photoelectric conversion cell; and
removing the first silicon substrate and the first buffer layer from the first photoelectric conversion cell.

2. The photovoltaic cell manufacturing method according to claim 1 , wherein the first photoelectric conversion cell and the second photoelectric conversion cell are stacked in series with each other in a stack direction.

3. The photovoltaic cell manufacturing method according to claim 1 , wherein the first photoelectric conversion cell is formed with a material having a lattice constant that is between a lattice constant of GaAs and a lattice constant of InP.

4. The photovoltaic cell manufacturing method according to claim 1 , wherein a part of the first buffer layer is a Ge layer or a SiGe layer.

5. The photovoltaic cell manufacturing method according to claim 1 , wherein the first buffer layer is a strained super lattice layer including GaAs.

6. The photovoltaic cell manufacturing method according to claim 1 , further comprising:
depositing a first joining layer on the first photoelectric conversion cell after forming the first photoelectric conversion cell; and
depositing a second joining layer on the second photoelectric conversion cell,
wherein the forming of the layered body includes joining the first photoelectric conversion cell and the second photoelectric conversion cell, by joining the first joining layer and the second joining layer.

7. The photovoltaic cell manufacturing method according to claim 1 , wherein at least a part of the first buffer layer has a lattice constant that is higher than the lattice constant of the first silicon substrate and lower than the lattice constant of the first photoelectric conversion cell.

8. A photovoltaic cell manufacturing method comprising:
depositing a first buffer layer on a first silicon substrate, for performing lattice relaxation;
depositing a first photoelectric conversion cell on the first buffer layer, the first photoelectric conversion cell being formed by a compound semiconductor that includes a pn junction, and the first photoelectric conversion cell having a lattice constant that is higher than a lattice constant of the first silicon substrate, wherein
the lattice relaxation by the first buffer layer disposed between the first silicon substrate and the first photoelectric conversion cell relaxes a difference between the lattice constant of the first silicon substrate and the lattice constant of the first photoelectric conversion cell;
forming a second photoelectric conversion cell on a second silicon substrate;
forming a layered body including the first silicon substrate, the first buffer layer, the first photoelectric conversion cell deposited on the first buffer layer and having the lattice constant that is higher than that of the first silicon substrate on which the first buffer layer was deposited, the second photoelectric conversion cell, and the second silicon substrate, by bonding the first photoelectric conversion cell and the second photoelectric conversion cell; and
removing the first silicon substrate and the first buffer layer from the first photoelectric conversion cell,
wherein the second photoelectric conversion cell is made of a silicon semiconductor.

9. The photovoltaic cell manufacturing method according to claim 8 , wherein the first photoelectric conversion cell is formed with a material having band gap energy of 1.4 eV through 1.9 eV.

10. The photovoltaic cell manufacturing method according to claim 8 , wherein the first photoelectric conversion cell and the second photoelectric conversion cell are stacked in series with each other in a stack direction.

11. The photovoltaic cell manufacturing method according to claim 8 , wherein the first photoelectric conversion cell is formed with a material having a lattice constant that is between a lattice constant of GaAs and a lattice constant of InP.

12. The photovoltaic cell manufacturing method according to claim 8 , wherein a part of the first buffer layer is a Ge layer or a SiGe layer.

13. The photovoltaic cell manufacturing method according to claim 8 , wherein the first buffer layer is a strained super lattice layer including GaAs.

14. The photovoltaic cell manufacturing method according to claim 8 , further comprising:
depositing a first joining layer on the first photoelectric conversion cell after forming the first photoelectric conversion cell; and
depositing a second joining layer on the second photoelectric conversion cell,
wherein the forming of the layered body includes joining the first photoelectric conversion cell and the second photoelectric conversion cell, by joining the first joining layer and the second joining layer.

15. The photovoltaic cell manufacturing method according to claim 8 , wherein at least a part of the first buffer layer has a lattice constant that is higher than the lattice constant of the first silicon substrate and lower than the lattice constant of the first photoelectric conversion cell.

16. A photovoltaic cell manufacturing method comprising:
depositing a first buffer layer for performing lattice relaxation on a first silicon substrate;
depositing a first photoelectric conversion cell on the first buffer layer, the first photoelectric conversion cell being formed by a compound semiconductor that includes a pn junction, and the first photoelectric conversion cell having a lattice constant that is higher than that of silicon;
depositing a second buffer layer for performing lattice relaxation on a second silicon substrate;
depositing a second photoelectric conversion cell on the second buffer layer, the second photoelectric conversion cell being formed by a compound semiconductor that includes a pn junction, and the second photoelectric conversion cell having a lattice constant that is higher than that of silicon and that is different from that of the first photoelectric conversion cell;
forming a first layered body including the first silicon substrate, the first buffer layer, the first photoelectric conversion cell, the second photoelectric conversion cell, the second buffer layer, and the second silicon substrate, by bonding the first photoelectric conversion cell and the second photoelectric conversion cell;
removing the second silicon substrate and the second buffer laye

Assignees

• Sato Shunichi
• Nishiyama Nobuhiko
• Ricoh Co Ltd

Inventors

• Sato Shunichi
• Nishiyama Nobuhiko

Classifications

• Y02E10/544

  Solar cells from Group III-V materials · CPC title

• H01L31/1892

  Electricity · mapped topic

• H01L31/1836 Primary

  Electricity · mapped topic

• H01L31/035236

  Electricity · mapped topic

• H01L31/06875

  Electricity · mapped topic