Electro-optical device

Patent metadata

Field	Value
Publication number	US-9640686-B2
Application number	US-201414167415-A
Country	US
Kind code	B2
Filing date	Jan 29, 2014
Priority date	Jul 31, 2006
Publication date	May 2, 2017
Grant date	May 2, 2017

Abstract

An electro-optical device can include a plurality of nanocrystals positioned between a first electrode and a second electrode.

First claim

What is claimed is:

1. A method of producing an electro-optical device comprising:
providing a first electrode and a second electrode, and
exposing a surface including a plurality of nanocrystals to a solution including a ligand for the nanocrystal;
wherein the plurality of nanocrystals are positioned between the first electrode and the second electrode, and wherein the surface including the plurality of nanocrystals is exposed to the solution when the plurality of nanocrystals are between the first electrode and the second electrode.

2. The method of claim 1 , wherein the ligand is a base.

3. The method of claim 1 , wherein the ligand is an amine.

4. The method of claim 3 , wherein the amine is a C 2-6 alkyl amine.

5. The method of claim 1 , wherein the ligand is a hydroxide salt.

6. The method of claim 5 , wherein the hydroxide salt is sodium hydroxide.

7. The method of claim 1 , wherein the nanocrystal is a CdTe nanocrystal.

8. The method of claim 1 , wherein the plurality of nanocrystals form a layer between a first electrode and a second electrode.

9. The method of claim 8 , wherein the nanocrystal is a CdTe nanocrystal.

10. The method of claim 9 , wherein the first electrode and the second electrode are gold.

11. A method of producing an electro-optical device comprising:
providing a first electrode and a second electrode, and
providing a surface including a plurality of nanocrystals, wherein each nanocrystal includes an inorganic overcoating and an organic ligand; and
heating the surface to remove the organic ligand;
wherein the plurality of nanocrystals are positioned between the first electrode and the second electrode, and wherein the surface is heated when the plurality of nanocrystals are between the first electrode and the second electrode.

12. A method of generating photocurrent comprising:
providing a device comprising a first electrode and a second electrode, the first electrode and the second electrode being positioned on a surface of a substrate, and a plurality of nanocrystals positioned between the first electrode and the second electrode, the nanocrystal and at least one electrode having a valence band gap offset sufficient to inject a charge carrier from the first electrode or second electrode into the nanocrystal;
applying a voltage between the first electrode and the second electrode; and
exposing the nanocrystals to irradiation when the nanocrystals are between the first electrode and the second electrode.

13. The method of claim 12 , wherein the nanocrystal is a CdTe nanocrystal.

14. The method of claim 12 , wherein the first electrode and the second electrode are gold.

15. The method of claim 12 , wherein the substrate is a dielectric layer.

16. The method of claim 15 , further comprising a third electrode positioned on the dielectric layer and opposite the first electrode and second electrode.

17. The method of claim 16 , wherein the third electrode is a doped semiconductor or transparent electrode.

18. The method of claim 12 , further comprising exposing the plurality of nanocrystals to a solution including a ligand for the nanocrystal.

19. The method of claim 18 , wherein the ligand is a base.

20. The method of claim 18 , wherein the ligand is an amine.

21. The method of claim 20 , wherein the amine is a C 2-6 alkyl amine.

22. The method of claim 18 , wherein the ligand is a hydroxide salt.

23. The method of claim 22 , wherein the hydroxide salt is sodium hydroxide.

24. The method of claim 18 , wherein the ligand is butylamine, aniline, 1,6-diaminohexane, 1,4-phenylenediamine, tri-n-butylphosphine, or a hydroxide salt.

Assignees

• Massachusetts Inst Technology

Inventors

• Bawendi Moungi
• Porter Venda J
• Kastner Marc
• Mentzel Tamar

Classifications

• H10P14/3456

  Polycrystalline · CPC title

• H10P14/3436

  being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds · CPC title

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10P14/3432

  Tellurides · CPC title

• H10P14/3424

  being Group IIB-VIA materials · CPC title