Quantum well infrared photodetectors using II-VI material systems

Patent metadata

Field	Value
Publication number	US-9698286-B2
Application number	US-201414185404-A
Country	US
Kind code	B2
Filing date	Feb 20, 2014
Priority date	Feb 20, 2013
Publication date	Jul 4, 2017
Grant date	Jul 4, 2017

Abstract

A quantum well infrared photodetector (QWIP) and method of making is disclosed. The QWIP includes a plurality of epi-layers formed into multiple periods of quantum wells, each of the quantum wells being separated by a barrier, the quantum wells and barriers being formed of II-VI semiconductor materials. A multiple wavelength QWIP is also disclosed and includes a plurality of QWIPs stacked onto a single epitaxial structure, in which the different QWIPs are designed to respond at different wavelengths. A dual wavelength QWIP is also disclosed and includes two QWIPs stacked onto a single epitaxial structure, in which one QWIP is designed to respond at 10 μm and the other at 3-5 μm wavelengths.

First claim

What is claimed is:

1. A quantum well infrared photodetector (QWIP) comprising:
a plurality of epi-layers formed into multiple periods of quantum wells, each of the quantum wells being separated by a barrier,
an emitter contact layer formed above the quantum wells, and
a collector contact layer formed below the quantum wells,
the quantum wells, barriers, emitter contact layer, and collector contact layer being formed of II-VI semiconductor materials comprising zinc, cadmium, and selenium.

2. A multiple wavelength QWIP comprising a plurality of QWIPs of claim 1 stacked onto a single epitaxial structure, in which the different QWIPs are designed to respond at different wavelengths.

3. A dual wavelength QWIP comprising two QWIPs of claim 1 stacked onto a single epitaxial structure, in which one QWIP is designed to respond at 10 μm and the other at 3-5 μm wavelengths.

4. The QWIP of claim 1 wherein the II-VI semiconductor materials further comprise magnesium.

5. The QWIP of claim 1 comprising an active region grown on an InP substrate wherein the II-VI semiconductor materials comprise compositions that produce layers that are lattice-matched to the InP substrate.

6. The QWIP of claim 1 wherein the quantum wells comprise Zn 0.51 Cd 0.49 Se.

7. The QWIP of claim 1 wherein the barriers comprise Zn 0.45 Cd 0.42 Mg 0.13 Se.

8. The QWIP of claim 1 wherein the barriers comprise Zn 0.29 Cd 0.26 Mg 0.45 Se.

9. The QWIP of claim 1 comprising an active region grown on an InP substrate.

10. The QWIP of claim 1 comprising an active region grown on InP substrate with a lattice-matched InGaAs buffer layer.

11. A method of making quantum well infrared photodetector (QWIP), the method comprising:
forming a plurality of epi-layers formed into multiple periods of quantum wells;
forming at least one barrier between the quantum wells;
forming an emitter contact layer above the quantum wells; and
forming a collector contact layer below the quantum wells, the quantum wells, barrier, emitter contact layer, and collector contact layer being formed of II-VI semiconductor materials comprising zinc, cadmium, and selenium.

12. The method of claim 11 further comprising forming a plurality of the QWIPs of claim 11 stacked onto a single epitaxial structure, in which the different QWIPs are designed to respond at different wavelengths.

13. The method of claim 11 further comprising forming dual wavelength QWIP comprised of two QWIPs of claim 11 stacked onto a single epitaxial structure, in which one QWIP is designed to respond at 10 μm and the other at 3-5 μm wavelengths.

14. The method of claim 11 wherein the II-VI semiconductor materials further comprise magnesium.

15. The method of claim 11 further comprising forming an active region grown on an InP substrate wherein the II-VI semiconductor materials comprise compositions that produce layers that are lattice-matched to the InP substrate.

16. The method of claim 11 wherein the quantum wells comprise Zn 0.51 Cd 0.49 Se.

17. The method of claim 11 wherein the barriers comprise Zn 0.45 Cd 0.42 Mg 0.13 Se.

18. The method of claim 11 wherein the barriers comprise Zn 0.29 Cd 0.26 Mg 0.45 Se.

19. The method of claim 11 further comprising forming an active region grown on an InP substrate.

20. The method of claim 11 further comprising forming an active region grown on InP substrate with a lattice-matched InGaAs buffer layer.

21. A quantum well infrared photodetector (QWIP) comprising:
a plurality of epi-layers formed into multiple periods of quantum wells, each of the quantum wells being separated by a barrier,
an emitter contact layer formed below the quantum wells, and
a collector contact layer formed above the quantum wells,
the quantum wells, barriers, emitter contact layer, and collector contact layer being formed of II-VI semiconductor materials comprising zinc, cadmium, and selenium.

Assignees

• Ravikumar Arvind
• Gmachl Claire
• Shen Aidong
• Tamargo Maria
• The Res Found Of The City Univ Of New York
• Univ Princeton

Inventors

• Ravikumar Arvind
• Gmachl Claire
• Shen Aidong
• Tamargo Maria

Classifications

• H01L31/02966 Primary

  Electricity · mapped topic

• Y02E10/50

  Photovoltaic [PV] energy · CPC title

• H01L31/035236

  Electricity · mapped topic

• H01L31/1836

  Electricity · mapped topic

• H01L31/1013

  Electricity · mapped topic