Integrated circuit device
US-12598804-B2 · Apr 7, 2026 · US
This page is not indexed by search engines while we improve data quality.
Yu Haejun patents
Yu Haejun is listed as an inventor on 27 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Yu Haejun |
| Total patents | 27 |
| First publication | Nov 25, 2021 |
| Latest publication | Apr 7, 2026 |
Notable patents
Publications ranked by popularity score, then publication date.
Semiconductor devices including source/drain layers and methods of manufacturing the same
US-2026082634-A1 · Mar 19, 2026 · US
Semiconductor devices including source/drain layers and methods of manufacturing the same
US-12495578-B2 · Dec 9, 2025 · US
Semiconductor device and method of fabricating the same
US-12310055-B2 · May 20, 2025 · US
Integrated circuit device and method of manufacturing the same
US-12288805-B2 · Apr 29, 2025 · US
Semiconductor device having a liner layer and method of fabricating the same
US-12256564-B2 · Mar 18, 2025 · US
Method of forming a static random-access memory (SRAM) cell with fin field effect transistors
US-12243874-B2 · Mar 4, 2025 · US
Integrated circuit device
US-12113108-B2 · Oct 8, 2024 · US
Integrated circuit device and method of manufacturing the same
US-2024304666-A1 · Sep 12, 2024 · US
Semiconductor device having air gap between gate electrode and source/drain pattern
US-12046632-B2 · Jul 23, 2024 · US
Recent patents
Latest publications not already listed above.
Integrated circuit device and method of manufacturing the same
US-12034043-B2 · Jul 9, 2024 · US
Semiconductor device and method of fabricating the same
US-2024162293-A1 · May 16, 2024 · US
Integrated circuit device
US-2024088150-A1 · Mar 14, 2024 · US
Semiconductor device having a liner layer and method of fabricating the same
US-11888028-B2 · Jan 30, 2024 · US
Semiconductor device
US-2023275092-A1 · Aug 31, 2023 · US
Semiconductor device having air gap between gate electrode and source/drain pattern
US-2023223438-A1 · Jul 13, 2023 · US
Semiconductor device
US-11682673-B2 · Jun 20, 2023 · US
Semiconductor device having an air gap between gate electrode and source/drain pattern
US-11605711-B2 · Mar 14, 2023 · US
Semiconductor device and method of fabricating the same
US-2023068364-A1 · Mar 2, 2023 · US
Semiconductor devices including source/drain layers and methods of manufacturing the same
US-2023006052-A1 · Jan 5, 2023 · US
Semiconductor device and method of fabricating the same
US-2022344469-A1 · Oct 27, 2022 · US
Integrated circuit device and method of manufacturing the same
US-2022293730-A1 · Sep 15, 2022 · US
Semiconductor device including a field effect transistor and method of fabricating the same
US-11417731-B2 · Aug 16, 2022 · US
Integrated circuit device
US-2022246738-A1 · Aug 4, 2022 · US
Semiconductor device
US-2022069078-A1 · Mar 3, 2022 · US
Semiconductor device
US-2022059534-A1 · Feb 24, 2022 · US
Semiconductor device and method of fabricating the same
US-2021367036-A1 · Nov 25, 2021 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Samsung Electronics Co Ltd | 27 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10D30/6757 | 27 |
| H10D30/6735 | 27 |
| H10D64/017 | 27 |
| H10D30/797 | 25 |
| H10D84/038 | 25 |