Temperature dependent refresh read rate
US-12374379-B2 · Jul 29, 2025 · US
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Wang Yanzhen patents
Wang Yanzhen is listed as an inventor on 12 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Wang Yanzhen |
| Total patents | 12 |
| First publication | Aug 29, 2017 |
| Latest publication | Jul 29, 2025 |
Notable patents
Publications ranked by popularity score, then publication date.
Temperature dependent refresh read rate
US-2024395308-A1 · Nov 28, 2024 · US
Method to form high performance fin profile for 12LP and above
US-10580857-B2 · Mar 3, 2020 · US
Novel method to form high performance fin profile for 12lp and above
US-2019386100-A1 · Dec 19, 2019 · US
Single-diffusion break structure for fin-type field effect transistors
US-10177151-B1 · Jan 8, 2019 · US
Single-diffusion break structure for fin-type field effect transistors
US-2018374851-A1 · Dec 27, 2018 · US
Methods, apparatus, and system for fabricating finfet devices with increased breakdown voltage
US-2018358267-A1 · Dec 13, 2018 · US
Methods, apparatus, and system for fabricating finFET devices with increased breakdown voltage
US-10153211-B1 · Dec 11, 2018 · US
Methods of forming short channel and long channel finFET devices so as to adjust threshold voltages
US-10074732-B1 · Sep 11, 2018 · US
Fin-type field effect transistors with single-diffusion breaks and method
US-10014296-B1 · Jul 3, 2018 · US
Recent patents
Latest publications not already listed above.
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Globalfoundries Inc | 10 |
| Western Digital Tech Inc | 2 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10D84/038 | 8 |
| H10D30/024 | 7 |
| H10D84/0158 | 6 |
| H10D84/834 | 6 |
| H01L29/0649 | 5 |