Semiconductor structure with extending gate structure and method for forming the same
US-2016240650-A1 · Aug 18, 2016 · US
Formation of work-function layers for gate electrode using a gas cluster ion beam
US9748392B1 · US · B1
| Field | Value |
|---|---|
| Publication number | US-9748392-B1 |
| Application number | US-201615053867-A |
| Country | US |
| Kind code | B1 |
| Filing date | Feb 25, 2016 |
| Priority date | Feb 25, 2016 |
| Publication date | Aug 29, 2017 |
| Grant date | Aug 29, 2017 |
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Abstract
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An angled gas cluster ion beam is used for each sidewall and top of a fin (two applications) to form work-function metal layer(s) only on the sidewalls and top of each fin.
First claim
Opening claim text (preview).
The invention claimed is: 1. A method, comprising: providing a starting semiconductor structure, the starting semiconductor structure comprising a semiconductor substrate, at least one fin coupled to the substrate, a bottom portion thereof surrounded by isolation material, and spacers for at least one gate surrounding a top portion of the at least one fin; and selectively forming work-function metal only on sidewalls and a top of the at least one fin, such that no work-function metal is formed on the spacers. 2. The method of claim 1 , wherein the selectively forming comprises: forming work-function metal only on a first sidewall and a top surface of the at least one fin; and forming the work-function metal only on a second sidewall opposite the first sidewall and a top surface of the at least one fin. 3. The method of claim 2 , wherein forming the work-function metal only on the first sidewall and the top surface comprises using a gas cluster ion beam (GCIB) process, wherein an ion beam of the GCIB process is angled with respect to a second sidewall opposite the first sidewall of the at least one fin. 4. The method of claim 3 , wherein forming the work-function metal only on the second sidewall and top surface comprises using the GCIB process again, wherein an ion beam of the GCIB process is angled with respect to the first sidewall of the at least one fin. 5. The method of claim 3 , wherein the angle can be determined according to: Tan X=(Fin Pitch minus Fin Width) divided by a Fin Height, wherein X is the angle.
Assignees
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Classifications
Physical vapour deposition [PVD] · CPC title
of electrodes having a conductor capacitively coupled to a semiconductor by an insulator · CPC title
Electricity · mapped topic
- H01L29/7851Primary
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9748392B1 cover?
- An angled gas cluster ion beam is used for each sidewall and top of a fin (two applications) to form work-function metal layer(s) only on the sidewalls and top of each fin.
- Who is the assignee on this patent?
- Globalfoundries Inc
- What technology area does this patent fall under?
- Primary CPC classification H01L29/7851. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Aug 29 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).