Fabricating high quality, high stress channel regions in gate-all-around field effect transistors (gaa fets)
US-2026096152-A1 · Apr 2, 2026 · US
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Murthy Anand patents
Murthy Anand is listed as an inventor on 228 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Murthy Anand |
| Total patents | 228 |
| First publication | Apr 23, 2015 |
| Latest publication | Apr 2, 2026 |
Notable patents
Publications ranked by popularity score, then publication date.
Cell architecture with forksheet and gate-all-around devices
US-2026096195-A1 · Apr 2, 2026 · US
Self-aligned backside vias using endpointed subfin etch
US-2026096140-A1 · Apr 2, 2026 · US
Improved removal of sacrificial material for minimized channel extensions
US-2026090039-A1 · Mar 26, 2026 · US
Complementary gate cut plugs for strain optimization
US-2026090024-A1 · Mar 26, 2026 · US
Defect-free epitaxial source and drain structures for ribbon field effect transistors
US-2026090023-A1 · Mar 26, 2026 · US
Replacement conductive material for interconnect features
US-12564030-B2 · Feb 24, 2026 · US
Cladding and condensation for strained semiconductor nanoribbons
US-12557340-B2 · Feb 17, 2026 · US
Multiple epitaxial layer source and drain transistors for low temperature computation
US-12550733-B2 · Feb 10, 2026 · US
Device, method and system to provide epitaxial structures opposite sides of a separation layer between channel stacks
US-12550381-B2 · Feb 10, 2026 · US
Recent patents
Latest publications not already listed above.
Single conductivity type devices for low temperature computation
US-12550732-B2 · Feb 10, 2026 · US
Enriched semiconductor nanoribbons for producing intrinsic compressive strain
US-12543351-B2 · Feb 3, 2026 · US
Backside contact structure with enhanced ohmic contact
US-2026032960-A1 · Jan 29, 2026 · US
Diode structure with backside epitaxial growth
US-12520509-B2 · Jan 6, 2026 · US
Device, method and system to provide heterogeneous memory circuit stacking
US-2026006800-A1 · Jan 1, 2026 · US
Device, method and system to provide electrical coupling across active layers of an integrated circuit die
US-2026005131-A1 · Jan 1, 2026 · US
Silicon source and drain trench fill for wider contacts
US-2026006906-A1 · Jan 1, 2026 · US
Device, method and system to conduct heat through an active layer of an integrated circuit die
US-2026005094-A1 · Jan 1, 2026 · US
Sacrificial ribbon for uniform workfunction and capacitance benefits
US-2026006846-A1 · Jan 1, 2026 · US
Transistor metallization endcap scaling for performance optimization
US-2026006833-A1 · Jan 1, 2026 · US
Backside etch processes for ultra uniformity of front-end structures
US-2026005067-A1 · Jan 1, 2026 · US
Fabrication of ribbon cfets with optimized nmos and pmos channel materials
US-2026006873-A1 · Jan 1, 2026 · US
Strain engineering using gate cuts
US-2026006859-A1 · Jan 1, 2026 · US
Sige nanoribbons for high performance transistors
US-2026006912-A1 · Jan 1, 2026 · US
Vertically stacked memory arrays corresponding to respective single dopant types
US-2026006801-A1 · Jan 1, 2026 · US
Source or drain structures with relatively high germanium content
US-2025380478-A1 · Dec 11, 2025 · US
Gate-all-around integrated circuit structures having underlying dopant-diffusion blocking layers
US-12484266-B2 · Nov 25, 2025 · US
Source or drain structures with relatively high germanium content
US-12484272-B2 · Nov 25, 2025 · US
Staircase-based metal-insulator-metal (MIM) capacitors
US-12451420-B2 · Oct 21, 2025 · US
Co-deposition of titanium and silicon for improved silicon germanium source and drain contacts
US-12439669-B2 · Oct 7, 2025 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Intel Corp | 226 |
| Murthy Anand | 3 |
| Ghani Tahir | 2 |
| Kim Seiyon | 1 |
| Aubertine Daniel | 1 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10D62/151 | 122 |
| H10D62/121 | 117 |
| H10D64/017 | 107 |
| H10D84/038 | 107 |
| H10D30/6757 | 103 |