High Critical Temperature Device with Metal Nitride Layer
US-2026082819-A1 · Mar 19, 2026 · US
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Lavan Shane patents
Lavan Shane is listed as an inventor on 31 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Lavan Shane |
| Total patents | 31 |
| First publication | Nov 5, 2020 |
| Latest publication | Mar 19, 2026 |
Notable patents
Publications ranked by popularity score, then publication date.
Detachable Mid Temp Electrostatic Chuck (ESC) for Process Chamber
US-2026015712-A1 · Jan 15, 2026 · US
Target profile for a physical vapor deposition chamber target
US-D1072774-S · Apr 29, 2025 · US
Gas injection process kit to eliminate arcing and improve uniform gas distribution for a PVD process
US-12183560-B2 · Dec 31, 2024 · US
High critical temperature metal nitride layer with oxide or oxynitride seed layer
US-12185643-B2 · Dec 31, 2024 · US
Method and chamber for backside physical vapor deposition
US-12176205-B2 · Dec 24, 2024 · US
Method and chamber for backside physical vapor deposition
US-12142478-B2 · Nov 12, 2024 · US
Method of making high critical temperature metal nitride layer
US-12096701-B2 · Sep 17, 2024 · US
Method of making high critical temperature metal nitride layer
US-12052935-B2 · Jul 30, 2024 · US
Cleaning of SIN with CCP plasma or RPS clean
US-12027354-B2 · Jul 2, 2024 · US
Recent patents
Latest publications not already listed above.
Cleaning of sin with CCP plasma or RPS clean
US-11915918-B2 · Feb 27, 2024 · US
High critical temperature metal nitride layer with oxide or oxynitride seed layer
US-2023345846-A1 · Oct 26, 2023 · US
Method and chamber for backside physical vapor deposition
US-2023335393-A1 · Oct 19, 2023 · US
Method of making high critical temperature metal nitride layer
US-2023329125-A1 · Oct 12, 2023 · US
Gas injection process kit to eliminate arcing and improve uniform gas distribution for a pvd process
US-2023187191-A1 · Jun 15, 2023 · US
Method of making high critical temperature metal nitride layer
US-11678589-B2 · Jun 13, 2023 · US
Gas injection process kit to eliminate arcing and improve uniform gas distribution for a PVD process
US-11600477-B2 · Mar 7, 2023 · US
High critical temperature metal nitride layer with oxide or oxynitride seed layer
US-11600761-B2 · Mar 7, 2023 · US
Method and chamber for backside physical vapor deposition
US-11572618-B2 · Feb 7, 2023 · US
Cleaning of sin with ccp plasma or rps clean
US-2022415636-A1 · Dec 29, 2022 · US
Method and chamber for backside physical vapor deposition
US-2022415649-A1 · Dec 29, 2022 · US
Cleaning of sin with ccp plasma or rps clean
US-2022415637-A1 · Dec 29, 2022 · US
Method and chamber for backside physical vapor deposition
US-11469096-B2 · Oct 11, 2022 · US
Methods of reducing particles in a physical vapor deposition (pvd) chamber
US-2022301828-A1 · Sep 22, 2022 · US
Methods of reducing particles in a physical vapor deposition (PVD) chamber
US-11450514-B1 · Sep 20, 2022 · US
Gas injection process kit to eliminate arcing and improve uniform gas distribution for a pvd process
US-2022186361-A1 · Jun 16, 2022 · US
High critical temperature metal nitride layer with oxide or oxynitride seed layer
US-2022052248-A1 · Feb 17, 2022 · US
Method of making high critical temperature metal nitride layer
US-2022013708-A1 · Jan 13, 2022 · US
Method of making high critical temperature metal nitride layer
US-2022013707-A1 · Jan 13, 2022 · US
Method and chamber for backside physical vapor deposition
US-2021062325-A1 · Mar 4, 2021 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Applied Materials Inc | 31 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| C23C14/50 | 17 |
| C23C14/0036 | 13 |
| C23C14/0641 | 13 |
| H10P14/6329 | 12 |
| C23C14/35 | 12 |