High critical temperature metal nitride layer with oxide or oxynitride seed layer

Patent metadata

Field	Value
Publication number	US-12185643-B2
Application number	US-202318177096-A
Country	US
Kind code	B2
Filing date	Mar 1, 2023
Priority date	Feb 21, 2020
Publication date	Dec 31, 2024
Grant date	Dec 31, 2024

Abstract

A superconducting device includes a substrate, a metal oxide or metal oxynitride seed layer on the substrate, and a metal nitride superconductive layer disposed directly on the seed layer. The seed layer is an oxide or oxynitride of a first metal, and the superconductive layer is a nitride of a different second metal.

First claim

What is claimed is:

1. A superconducting device, comprising:
a dielectric or semiconductive substrate;
a metal oxide or metal oxynitride seed layer on the dielectric or semiconductive substrate, the metal oxide or metal oxynitride seed layer being an oxide or oxynitride of a first metal;
a distributed Bragg reflector between the dielectric or semiconductive substrate and the metal oxide or metal oxynitride seed layer; and
a metal nitride superconductive layer disposed directly on the metal oxide or metal oxynitride seed layer, the superconductive layer being a nitride of a different second metal and patterned to form a wire.

2. A superconducting device, comprising:
a dielectric or semiconductive substrate;
a metal oxide or metal oxynitride seed layer on the dielectric or semiconductive substrate, the metal oxide or metal oxynitride seed layer being an oxide or oxynitride of a first metal;
an optical waveguide between the dielectric or semiconductive substrate and the metal oxide or metal oxynitride seed layer to receive light propagating substantially parallel to a top surface of the dielectric or semiconductive substrate; and
a metal nitride superconductive layer disposed directly on the metal oxide or metal oxynitride seed layer, the superconductive layer being a nitride of a different second metal and patterned to form a wire.

3. A superconducting device, comprising:
a dielectric or semiconductive substrate;
a metal oxide or metal oxynitride seed layer on the dielectric or semiconductive substrate, the seed layer being an oxide or oxynitride of a first metal;
a metal nitride seed layer between the metal oxide or metal oxynitride seed layer and the dielectric or semiconductive substrate, wherein the metal nitride seed layer is a nitride of the first metal; and
a metal nitride superconductive layer disposed directly on the metal oxide or metal oxynitride seed layer, the superconductive layer being a nitride of a different second metal and patterned to form a wire.

4. The device of claim 3 , wherein the metal nitride seed layer has a thickness of 3-50 nm.

5. The device of claim 3 , wherein the different second metal is niobium nitride, titanium nitride, or niobium titanium nitride.

6. The device of claim 5 , wherein the metal nitride superconductive layer comprises δ-phase NbN.

7. A superconducting device, comprising:
a dielectric or semiconductive substrate;
a metal oxide or metal oxynitride seed layer disposed directly on the dielectric or semiconductive substrate, the metal oxide or metal oxynitride seed layer being an oxide or oxynitride of a first metal; and
a metal nitride superconductive layer disposed directly on the metal oxide or metal oxynitride seed layer, the superconductive layer being a nitride of a different second metal and patterned to form a wire.

8. The device of claim 7 , wherein the metal oxide or metal oxynitride seed layer comprises aluminum nitride (AIN) or niobium nitride (NbN) and provides a higher critical temperature to the metal nitride superconductive layer than a metal nitride layer of the first metal.

9. The device of claim 7 , wherein the different second metal is niobium nitride, titanium nitride, or niobium titanium nitride.

10. The device of claim 9 , wherein the metal nitride superconductive layer comprises 8-phase NbN.

11. The device of claim 9 , wherein the first metal is aluminum.

12. The device of claim 7 , where the metal oxide or metal oxynitride seed layer has a thickness less than 2 nm.

13. The device of claim 7 , wherein the metal oxide or metal oxynitride seed layer has a thickness of 3-50 nm.

14. The device of claim 7 , further comprising a capping layer on the superconductive layer.

15. The device of claim 7 , including only one of the metal nitride superconductive layer.

16. The device of claim 7 , wherein the metal nitride superconductive layer has a thickness of 4 to 50 nm.

17. The device of claim 1 , wherein the different second metal is niobium nitride, titanium nitride, or niobium titanium nitride.

18. The device of claim 17 , wherein the metal nitride superconductive layer comprises δ-phase NbN.

19. The device of claim 2 , wherein the different second metal is niobium nitride, titanium nitride, or niobium titanium nitride.

20. The device of claim 19 , wherein the metal nitride superconductive layer comprises δ-phase NbN.

Assignees

• Applied Materials Inc

Inventors

• Yang Zihao
• Zhu Mingwei
• Mangipudi Shriram
• Chowdhury Mohammad Kamruzzaman
• Lavan Shane
• Chen Zhebo
• Cao Yong
• Patibandla Nag B

Classifications

• H10N60/12

  Josephson-effect devices · CPC title

• G02B6/12

  of the integrated circuit kind (electric integrated circuits H10B, H10D84/00 - H10D89/00, H10F19/00, H10F39/00, H10H29/00, H10K19/00, H10K39/00, H10K59/00, H10N19/00, H10N39/00, H10N59/00, H10N69/00, H10N79/00, H10N89/00) · CPC title

• H10N60/20

  Permanent superconducting devices · CPC title

• H10N60/0241

  of devices comprising nitrides or carbonitrides · CPC title

• H10N60/84

  Switching means for devices switchable between superconducting and normal states · CPC title