High critical temperature metal nitride layer with oxide or oxynitride seed layer

Patent metadata

Field	Value
Publication number	US-11600761-B2
Application number	US-202117178187-A
Country	US
Kind code	B2
Filing date	Feb 17, 2021
Priority date	Feb 21, 2020
Publication date	Mar 7, 2023
Grant date	Mar 7, 2023

Abstract

A superconducting device includes a substrate, a metal oxide or metal oxynitride seed layer on the substrate, and a metal nitride superconductive layer disposed directly on the seed layer. The seed layer is an oxide or oxynitride of a first metal, and the superconductive layer is a nitride of a different second metal.

First claim

What is claimed is:

1. A superconducting device, comprising:
a substrate;
a metal oxide or metal oxynitride seed layer on the substrate, the seed layer being an oxide or oxynitride of a first metal;
a metal nitride superconductive layer disposed directly on the seed layer, the superconductive layer being a nitride of a different second metal; and
a distributed Bragg reflector between the substrate and the metal oxide or metal oxynitride seed layer.

2. The device of claim 1 , wherein the nitride of the second metal is niobium nitride, titanium nitride, or niobium titanium nitride.

3. The device of claim 2 , wherein the metal nitride superconductive layer comprises δ-phase NbN.

4. The device of claim 2 , wherein the first metal is aluminum.

5. The device of claim 1 , where the metal oxide or metal oxynitride seed layer has a thickness less than 2 nm.

6. The device of claim 1 , wherein the metal oxide or metal oxynitride seed layer has a thickness of 3-50 nm.

7. The device of claim 1 , further comprising a capping layer on the superconductive layer.

8. A superconducting device, comprising:
a substrate having a top surface;
a metal oxide or metal oxynitride seed layer on the substrate, the seed layer being an oxide or oxynitride of a first metal;
a metal nitride superconductive layer disposed directly on the seed layer, the superconductive layer being a nitride of a different second metal; and
an optical waveguide between the substrate and the metal oxide or metal oxynitride seed layer to receive light propagating substantially parallel to the top surface of the substrate.

9. The device of claim 1 , wherein the metal nitride superconductive layer has a thickness of 4 to 50 nm.

10. A superconducting device, comprising:
a substrate;
a lower seed layer on the substrate, the lower seed layer being a nitride of a first metal;
an upper seed layer disposed directly on the lower seed layer, the upper seed layer being an oxide or oxynitride of the first metal; and
a superconductive layer disposed directly on the upper seed layer, the superconductive layer being a nitride of a different second metal.

11. The device of claim 10 , wherein the upper seed layer has a thickness of 0.1 to 1 nm.

12. The device of claim 11 , wherein the lower seed layer has a thickness of 3-50 nm.

13. The device of claim 10 , wherein the nitride of the second metal is niobium nitride, titanium nitride, or niobium titanium nitride.

14. The device of claim 13 , wherein the first metal is aluminum.

15. A superconducting device, comprising:
a substrate;
an aluminum nitride seed layer on the substrate;
an aluminum oxide or aluminum oxynitride seed layer disposed directly on the aluminum nitride seed layer; and
a superconductive layer disposed directly on the upper aluminum oxide or aluminum oxynitride seed layer, the superconductive layer being niobium nitride, titanium nitride, or niobium titanium nitride.

16. The device of claim 8 , wherein the second metal is niobium nitride, titanium nitride, or niobium titanium nitride.

17. The device of claim 16 , wherein the metal nitride superconductive layer comprises δ-phase NbN.

18. The device of claim 16 , wherein the first metal is aluminum.

19. The device of claim 8 , where the metal oxide or metal oxynitride seed layer has a thickness less than 2 nm.

20. The device of claim 8 , wherein the metal oxide or metal oxynitride seed layer has a thickness of 3-50 nm.

Assignees

• Applied Materials Inc

Inventors

• Yang Zihao
• Zhu Mingwei
• Mangipudi Shriram
• Chowdhury Mohammad Kamruzzaman
• Lavan Shane
• Chen Zhebo
• Cao Yong
• Patibandla Nag B

Classifications

• H10N60/12

  Josephson-effect devices · CPC title

• H10N60/84

  Switching means for devices switchable between superconducting and normal states · CPC title

• G02B6/12

  of the integrated circuit kind (electric integrated circuits H10B, H10D84/00 - H10D89/00, H10F19/00, H10F39/00, H10H29/00, H10K19/00, H10K39/00, H10K59/00, H10N19/00, H10N39/00, H10N59/00, H10N69/00, H10N79/00, H10N89/00) · CPC title

• H10N60/85 Primary

  Superconducting active materials · CPC title

• H10N60/0241

  of devices comprising nitrides or carbonitrides · CPC title