Method of making high critical temperature metal nitride layer

Patent metadata

Field	Value
Publication number	US-12096701-B2
Application number	US-202318200388-A
Country	US
Kind code	B2
Filing date	May 22, 2023
Priority date	Feb 21, 2020
Publication date	Sep 17, 2024
Grant date	Sep 17, 2024

Abstract

A method of fabricating a device including a superconductive layer includes depositing a seed layer on a substrate, exposing the seed layer to an oxygen-containing gas or plasma to form a modified seed layer, and after exposing the seed layer to the oxygen-containing gas or plasma depositing a metal nitride superconductive layer directly on the modified seed layer. The seed layer is a nitride of a first metal, and the superconductive layer is a nitride of a different second metal.

First claim

What is claimed is:

1. A method of fabricating a device including a superconductive layer, the method, comprising:
depositing a lower seed layer directly on a substrate, the lower seed layer being a nitride of a first metal;
depositing an upper seed layer directly on the lower seed layer, the upper seed layer being an oxide or oxynitride of the first metal; and
depositing a metal nitride superconductive layer directly on the upper seed layer, the superconductive layer being a nitride of a different second metal.

2. The method of claim 1 , wherein the second metal is niobium nitride, titanium nitride, or niobium titanium nitride.

3. The method of claim 2 , wherein the first metal is aluminum.

4. The method of claim 1 , wherein the first metal is aluminum.

5. The method of claim 1 , wherein depositing the upper seed layer comprises depositing a layer having a thickness of 1-3 nm.

6. The method of claim 1 , wherein the upper seed layer is an oxide of the first metal.

7. The method of claim 1 , wherein depositing the metal nitride superconductive layer comprises depositing a layer having a thickness of 4 to 50 nm.

8. The method of claim 1 , wherein depositing the lower seed layer, depositing the upper seed layer, and depositing the metal nitride superconductive layer are performed in a deposition tool without breaking vacuum.

9. The method of claim 8 , wherein depositing the lower seed layer, depositing the upper seed layer, and depositing the metal nitride superconductive layer comprise physical vapor deposition processes.

10. The method of claim 1 , wherein depositing the lower seed layer, depositing the upper seed layer, and depositing the metal nitride superconductive layer comprise physical vapor deposition processes.

11. A method of fabricating a device including a superconductive layer, the method, comprising:
depositing a lower seed layer on a substrate, the lower seed layer being a nitride of a first metal;
depositing an upper seed layer directly on the lower seed layer, the upper seed layer being an oxynitride of the first metal; and
depositing a metal nitride superconductive layer directly on the upper seed layer, the superconductive layer being a nitride of a different second metal.

12. The method of claim 11 , wherein depositing the lower seed layer comprises depositing a layer having a thickness of 3 to 50 nm.

13. A method of fabricating a device including a superconductive layer, the method, comprising:
depositing a lower seed layer on a substrate, the lower seed layer being a nitride of a first metal;
depositing an upper seed layer directly on the lower seed layer, the upper seed layer being an oxide or oxynitride of the first metal; and
depositing a metal nitride superconductive layer directly on the upper seed layer, the superconductive layer being a nitride of a different second metal, the metal nitride superconductive layer being a lowermost superconductive layer in the device.

14. The method of claim 13 , wherein depositing the upper seed layer is by physical vapor deposition.

15. The method of claim 13 , further comprising switching a target of a deposition chamber, in which depositing both the upper seed layer and the lower seed layer are performed.

16. The method of claim 13 , wherein a thickness of the upper seed layer is 1-2 nm.

Assignees

• Applied Materials Inc

Inventors

• Yang Zihao
• Zhu Mingwei
• Mangipudi Shriram
• Chowdhury Mohammad Kamruzzaman
• Lavan Shane
• Chen Zhebo
• Cao Yong
• Patibandla Nag B

Classifications

• H10N60/0156

  of devices comprising Nb or an alloy of Nb with one or more of the elements of group IVB, e.g. titanium, zirconium or hafnium · CPC title

• H10N60/0241 Primary

  of devices comprising nitrides or carbonitrides · CPC title

• C23C14/0036

  Reactive sputtering · CPC title

• C23C14/5853

  Oxidation · CPC title

• C23C8/36

  using ionised gases, e.g. ionitriding · CPC title