High Critical Temperature Device with Metal Nitride Layer

Patent metadata

Field	Value
Publication number	US-2026082819-A1
Application number	US-202418829562-A
Country	US
Kind code	A1
Filing date	Sep 10, 2024
Priority date	Feb 21, 2020
Publication date	Mar 19, 2026
Grant date	—

Abstract

A method of fabricating a device including a superconductive layer includes depositing a seed layer on a substrate, exposing the seed layer to an oxygen-containing gas or plasma to form a modified seed layer, and after exposing the seed layer to the oxygen-containing gas or plasma depositing a metal nitride superconductive layer directly on the modified seed layer. The seed layer is a nitride of a first metal, and the superconductive layer is a nitride of a different second metal.

First claim

What is claimed is:

1 . A superconducting device, comprising:
a dielectric or semiconductor substrate; an oxynitride seed layer disposed on the substrate, the oxynitride seed layer being an oxynitride of a first metal; a metal nitride superconductive layer disposed directly on the seed layer and patterned to form a wire, the metal nitride superconductive being a nitride of a different second metal, wherein the second metal is niobium, titanium, or an alloy of niobium and titanium; and a capping layer of amorphous silicon, an oxide, or a metal nitride which is a nitride of silicon, of the first metal or of a different third metal.

2 . The device of claim 1 , wherein the second metal is niobium.

3 . The device of claim 2 , wherein the first metal is aluminum.

4 . The device of claim 1 , wherein the first metal is aluminum.

5 . The device of claim 1 , wherein the oxynitride seed layer has a thickness of 1-3 nm.

6 . The device of claim 5 , wherein the metal nitride superconductive layer has a thickness of 4-50 nm.

7 . The device of claim 1 , wherein the capping layer is an oxide of the first metal.

8 . The device of claim 7 , wherein the first metal is aluminum.

9 . The device of claim 1 , wherein the capping layer is an oxide of the first metal.

10 . The device of claim 9 , wherein the first metal is aluminum.

11 . The device of claim 1 , wherein the capping layer is silicon oxide or silicon nitride.

12 . The device of claim 1 , wherein the capping layer is a nitride of the different third metal.

13 . The device of claim 1 , wherein the capping layer is amorphous silicon.

14 . The device of claim 1 , wherein the wires have a width of 25 to 250 nm.

15 . The device of claim 1 , wherein trenches through the metal nitride superconductive layer to form the wires do not extend into the seed layer.

16 . The device of claim 1 , wherein trenches through the metal nitride superconductive layer to form the wires also extend into the seed layer.

17 . The device of claim 1 , wherein trenches through the capping layer and through the metal nitride superconductive layer to form the wires.

Assignees

• Applied Materials Inc

Inventors

• Yang Zihao
• Zhu Mingwei
• Mangipudi Shriram
• Chowdhury Mohammad Kamruzzaman
• Lavan Shane
• Chen Zhebo
• Cao Yong
• Patibandla Nag B

Classifications

• H10N60/0156

  of devices comprising Nb or an alloy of Nb with one or more of the elements of group IVB, e.g. titanium, zirconium or hafnium · CPC title

• H10N60/0241 Primary

  of devices comprising nitrides or carbonitrides · CPC title

• C23C14/0036

  Reactive sputtering · CPC title

• C23C14/5853

  Oxidation · CPC title

• C23C8/36

  using ionised gases, e.g. ionitriding · CPC title