Top gate recessed channel CMOS thin film transistor and methods of fabrication
US-12388011-B2 · Aug 12, 2025 · US
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Keech Ryan patents
Keech Ryan is listed as an inventor on 40 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Keech Ryan |
| Total patents | 40 |
| First publication | Apr 2, 2020 |
| Latest publication | Aug 12, 2025 |
Notable patents
Publications ranked by popularity score, then publication date.
Contact resistance reduction in transistor devices with metallization on both sides
US-2025227956-A1 · Jul 10, 2025 · US
Contact resistance reduction in transistor devices with metallization on both sides
US-12342574-B2 · Jun 24, 2025 · US
Source or drain structures with vertical trenches
US-12342611-B2 · Jun 24, 2025 · US
High aspect ratio source or drain structures with abrupt dopant profile
US-12288808-B2 · Apr 29, 2025 · US
Self-aligned interconnect structures and methods of fabrication
US-12266570-B2 · Apr 1, 2025 · US
Contact resistance reduction in transistor devices with metallization on both sides
US-2024347610-A1 · Oct 17, 2024 · US
Low resistance approaches for fabricating contacts and the resulting structures
US-12119387-B2 · Oct 15, 2024 · US
Arsenic-doped epitaxial source/drain regions for NMOS
US-12094881-B2 · Sep 17, 2024 · US
Source or drain structures for germanium n-channel devices
US-2024258427-A1 · Aug 1, 2024 · US
Recent patents
Latest publications not already listed above.
Three-dimensional integrated circuits (3DICs) including bottom gate MOS transistors with monocrystalline channel material
US-11996404-B2 · May 28, 2024 · US
Source or drain structures with vertical trenches
US-2024170484-A1 · May 23, 2024 · US
Source or drain structures for germanium N-channel devices
US-11973143-B2 · Apr 30, 2024 · US
Top gate recessed channel cmos thin film transistor and methods of fabrication
US-2024136277-A1 · Apr 25, 2024 · US
Source or drain structures with vertical trenches
US-11935887-B2 · Mar 19, 2024 · US
Top gate recessed channel CMOS thin film transistor in the back end of line and methods of fabrication
US-11929320-B2 · Mar 12, 2024 · US
High aspect ratio source or drain structures with abrupt dopant profile
US-2024014268-A1 · Jan 11, 2024 · US
High aspect ratio source or drain structures with abrupt dopant profile
US-11804523-B2 · Oct 31, 2023 · US
Arsenic-doped epitaxial source/drain regions for nmos
US-2023197729-A1 · Jun 22, 2023 · US
Transistors with reduced epitaxial source/drain span via etch-back for improved cell scaling
US-2023095191-A1 · Mar 30, 2023 · US
Arsenic-doped epitaxial, source/drain regions for NMOS
US-11610889-B2 · Mar 21, 2023 · US
Source or drain structures with phosphorous and arsenic co-dopants
US-11552169-B2 · Jan 10, 2023 · US
Vertically stacked CMOS with upfront M0 interconnect
US-11482621-B2 · Oct 25, 2022 · US
Top gate recessed channel cmos thin film transistor in the back end of line and methods of fabrication
US-2022223519-A1 · Jul 14, 2022 · US
Self-aligned interconnect structures and methods of fabrication
US-2022199468-A1 · Jun 23, 2022 · US
Source & drain dopant diffusion barriers for n-type germanium transistors
US-2022199402-A1 · Jun 23, 2022 · US
Top gate recessed channel CMOS thin film transistor in the back end of line and methods of fabrication
US-11328988-B2 · May 10, 2022 · US
Low resistance approaches for fabricating contacts and the resulting structures
US-2022102521-A1 · Mar 31, 2022 · US
Three-dimensional integrated circuits (3dics) including bottom gate mos transistors with monocrystalline channel material
US-2022093586-A1 · Mar 24, 2022 · US
Three-dimensional integrated circuits (3DICs) including bottom gate MOS transistors with monocrystalline channel material
US-11244943-B2 · Feb 8, 2022 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Intel Corp | 40 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10D62/151 | 34 |
| H01L29/0847 | 25 |
| H10D30/62 | 24 |
| H10D64/017 | 23 |
| H10D84/038 | 23 |