Stress compensation for piezoelectric optical MEMS devices
US-11148939-B2 · Oct 19, 2021 · US
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Jiang Neng patents
Jiang Neng is listed as an inventor on 22 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Jiang Neng |
| Total patents | 22 |
| First publication | Aug 6, 2015 |
| Latest publication | Oct 19, 2021 |
Notable patents
Publications ranked by popularity score, then publication date.
Method of forming a semiconductor device
US-10319899-B2 · Jun 11, 2019 · US
Stress compensation for piezoelectric optical mems devices
US-2018179054-A1 · Jun 28, 2018 · US
Devices with specific termination angles in titanium tungsten layers and methods for fabricating the same
US-10009001-B2 · Jun 26, 2018 · US
High-temperature isotropic plasma etching process to prevent electrical shorts
US-9939710-B2 · Apr 10, 2018 · US
Stress compensation for piezoelectric optical MEMS devices
US-9890040-B2 · Feb 13, 2018 · US
Piezoeletric wet etch process with reduced resist lifting and controlled undercut
US-2017338401-A1 · Nov 23, 2017 · US
Piezoeletric wet etch process with reduced resist lifting and controlled undercut
US-9755139-B2 · Sep 5, 2017 · US
Sloped photoresist edges for defect reduction for metal dry etch processes
US-9716013-B2 · Jul 25, 2017 · US
Sloped termination in molybdenum layers and method of fabricating
US-9660603-B2 · May 23, 2017 · US
Recent patents
Latest publications not already listed above.
Devices with specific termination angles in titanium tungsten layers and methods for fabricating the same
US-2017063325-A1 · Mar 2, 2017 · US
Method for fabricating specific termination angles in titanium tungsten layers
US-9524881-B2 · Dec 20, 2016 · US
Method for fabricating specific termination angles in titanium tungsten layers
US-2016322235-A1 · Nov 3, 2016 · US
High-temperature isotropic plasma etching process to prevent electrical shorts
US-2016313627-A1 · Oct 27, 2016 · US
Sloped termination in molybdenum layers and method of fabricating
US-2016300693-A1 · Oct 13, 2016 · US
High-temperature isotropic plasma etching process to prevent electrical shorts
US-9405089-B2 · Aug 2, 2016 · US
Bond-pad integration scheme for improved moisture barrier and electrical contact
US-9304283-B2 · Apr 5, 2016 · US
Stress compensation for piezoelectric optical mems devices
US-2015378127-A1 · Dec 31, 2015 · US
Piezoeletric wet etch process with reduced resist lifting and controlled undercut
US-2015380637-A1 · Dec 31, 2015 · US
High-temperature isotropic plasma etching process to prevent electrical shorts
US-2015340245-A1 · Nov 26, 2015 · US
Bond-pad integration scheme for improved moisture barrier and electrical contact
US-2015338604-A1 · Nov 26, 2015 · US
Sloped photoresist edges for defect reduction for metal dry etch processes
US-2015221524-A1 · Aug 6, 2015 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Texas Instruments Inc | 22 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10P50/267 | 12 |
| H10P50/71 | 12 |
| H10N30/082 | 10 |
| H01L21/32136 | 9 |
| H01L21/32139 | 9 |