System and method to reduce unwanted receive signal leakage during switching
US-12476660-B2 · Nov 18, 2025 · US
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Genc Alper patents
Genc Alper is listed as an inventor on 38 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Genc Alper |
| Total patents | 38 |
| First publication | Jul 21, 2015 |
| Latest publication | Nov 18, 2025 |
Notable patents
Publications ranked by popularity score, then publication date.
Inductive drain and/or body ladders in rf switch stacks
US-2025096796-A1 · Mar 20, 2025 · US
Switch fet body current management devices and methods
US-2025080104-A1 · Mar 6, 2025 · US
System and method to reduce unwanted receive signal leakage during switching
US-2025047310-A1 · Feb 6, 2025 · US
Gate resistive ladder bypass for rf fet switch stack
US-2024429918-A1 · Dec 26, 2024 · US
Switch FET body current management devices and methods
US-12176888-B2 · Dec 24, 2024 · US
Method and apparatus for use in improving linearity of mosfets using an accumulated charge sink-harmonic wrinkle reduction
US-2024421227-A1 · Dec 19, 2024 · US
Gate resistive ladder bypass for RF FET switch stack
US-12119814-B2 · Oct 15, 2024 · US
Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
US-12074217-B2 · Aug 27, 2024 · US
Gate resistor bypass for rf fet switch stack
US-2024146301-A1 · May 2, 2024 · US
Recent patents
Latest publications not already listed above.
Inductive drain and/or body ladders in RF switch stacks
US-11923838-B2 · Mar 5, 2024 · US
Inductive drain and/or body ladders in rf switch stacks
US-2023412171-A1 · Dec 21, 2023 · US
Switch fet body current management devices and methods
US-2023318596-A1 · Oct 5, 2023 · US
Gate resistive ladder bypass for rf fet switch stack
US-2023283277-A1 · Sep 7, 2023 · US
Switch FET body current management devices and methods
US-11671090-B2 · Jun 6, 2023 · US
Gate resistive ladder bypass for RF FET switch stack
US-11632107-B1 · Apr 18, 2023 · US
Gate resistive ladder bypass for rf fet switch stack
US-2023107974-A1 · Apr 6, 2023 · US
Methods and devices to generate gate induced drain leakage current sink or source path for switch FETs
US-11463087-B2 · Oct 4, 2022 · US
Gate resistor bypass for RF FET switch stack
US-11405035-B1 · Aug 2, 2022 · US
Methods and devices to generate gate induced drain leakage current sink or source path for switch fets
US-2022038099-A1 · Feb 3, 2022 · US
Switch fet body current management devices and methods
US-2022038097-A1 · Feb 3, 2022 · US
Switch fet body current management devices and methods
US-2022038092-A1 · Feb 3, 2022 · US
Method and apparatus for use in improving linearity of mosfets using an accumulated charge sink-harmonic wrinkle reduction
US-2021320206-A1 · Oct 14, 2021 · US
Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
US-11011633-B2 · May 18, 2021 · US
Method and apparatus for use in improving linearity of mosfets using an accumulated charge sink-harmonic wrinkle reduction
US-2020321467-A1 · Oct 8, 2020 · US
Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
US-10797172-B2 · Oct 6, 2020 · US
Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
US-10790390-B2 · Sep 29, 2020 · US
Method and Apparatus for use in Improving Linearity of MOSFETs using an Accumulated Charge Sink-Harmonic Wrinkle Reduction
US-2019237579-A1 · Aug 1, 2019 · US
Method and Apparatus for use in Improving Linearity of MOSFETs using an Accumulated Charge Sink-Harmonic Wrinkle Reduction
US-2019088781-A1 · Mar 21, 2019 · US
Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink—harmonic wrinkle reduction
US-10074746-B2 · Sep 11, 2018 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Psemi Corp | 28 |
| Peregrine Semiconductor Corp | 8 |
| Qualcomm Inc | 2 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H03K17/162 | 24 |
| H10D62/125 | 16 |
| H10D62/60 | 16 |
| H10D30/6711 | 16 |
| H10D30/711 | 16 |