Stacked FET switch bias ladders
US-10886911-B2 · Jan 5, 2021 · US
Switch fet body current management devices and methods
US2025080104A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2025080104-A1 |
| Application number | US-202418952576-A |
| Country | US |
| Kind code | A1 |
| Filing date | Nov 19, 2024 |
| Priority date | Jul 31, 2020 |
| Publication date | Mar 6, 2025 |
| Grant date | — |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
Methods and devices to reduce gate induced drain leakage current in RF switch stacks are disclosed. The described devices utilize multiple discharge paths and/or less negative body bias voltages without compromising non-linear performance and power handling capability of power switches. Moreover, more compact bias voltage generation circuits with smaller footprint can be implemented as part of the disclosed devices.
First claim
Opening claim text (preview).
What is claimed is: 1 . A field effect transistor (FET) switch stack comprising: serially connected FETs coupled at one end to a first terminal and at another end to a second terminal, the first terminal being configured to receive a radio frequency (RF) signal; a body resistor ladder coupled to the first terminal, the body resistor ladder comprising a plurality of body resistor elements connected in series, each body resistor element coupled across body terminals of corresponding adjacent FETs of the serially connected FETs; and a first diode element arrangement comprising: i) a diode element stack comprising two or more diode elements, the diode element stack coupled between the body resistor ladder and the first terminal, and ii) one or more additional diode elements, coupled to the body resistor ladder.
Assignees
Inventors
Classifications
- H03K17/693Primary
Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors (logic circuits H03K19/00; code converters H03M5/00, H03M7/00) · CPC title
Special modifications or use of the back gate voltage of a FET · CPC title
Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors (logic circuits H03K19/00; code converters H03M5/00, H03M7/00) · CPC title
- H03K17/162Primary
without feedback from the output circuit to the control circuit · CPC title
Patent family
Related publications grouped by family.
External sources
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US2025080104A1 cover?
- Methods and devices to reduce gate induced drain leakage current in RF switch stacks are disclosed. The described devices utilize multiple discharge paths and/or less negative body bias voltages without compromising non-linear performance and power handling capability of power switches. Moreover, more compact bias voltage generation circuits with smaller footprint can be implemented as part of …
- Who is the assignee on this patent?
- Psemi Corp
- What technology area does this patent fall under?
- Primary CPC classification H03K17/693. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu Mar 06 2025 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).