Method for producing a continuous nitride layer
US-12598924-B2 · Apr 7, 2026 · US
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Feuillet Guy patents
Feuillet Guy is listed as an inventor on 21 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Feuillet Guy |
| Total patents | 21 |
| First publication | Jun 28, 2018 |
| Latest publication | Apr 7, 2026 |
Notable patents
Publications ranked by popularity score, then publication date.
Method for producing nitride mesas each intended to form an electronic or optoelectronic device
US-12278224-B2 · Apr 15, 2025 · US
Method for producing a continuous nitride layer
US-2025118552-A1 · Apr 10, 2025 · US
Process for obtaining a nitride layer
US-12252807-B2 · Mar 18, 2025 · US
Method for producing a nitride layer
US-12134836-B2 · Nov 5, 2024 · US
Method for producing an optoelectronic device comprising microLEDs
US-12080824-B2 · Sep 3, 2024 · US
Method for producing iii-n material-based vertical components
US-2024047201-A1 · Feb 8, 2024 · US
Method for producing a iii-n material-based layer
US-2024038532-A1 · Feb 1, 2024 · US
Method for producing nitride mesas each intended to form an electronic or optoelectronic device
US-2022359479-A1 · Nov 10, 2022 · US
Method for producing a nitride layer
US-2022251730-A1 · Aug 11, 2022 · US
Recent patents
Latest publications not already listed above.
Method for producting an optoelectronic device comprising microleds
US-2022199853-A1 · Jun 23, 2022 · US
Method making it possible to obtain on a crystalline substrate a semi-polar layer of nitride obtained with at least one of the following materials: gallium (Ga), indium (In) and aluminium (Al)
US-11139167-B2 · Oct 5, 2021 · US
Process for obtaining a nitride layer
US-2021164126-A1 · Jun 3, 2021 · US
Method of making a semi-polar nitride layer on a crystalline substrate
US-10892378-B2 · Jan 12, 2021 · US
Method of manufacturing optoelectronic structures provided with coplanar light emitting diodes
US-2020203556-A1 · Jun 25, 2020 · US
Optoelectronic device with three-dimensional semiconductor elements
US-10615299-B2 · Apr 7, 2020 · US
Method for obtaining a semi-polar nitride layer on a crystalline substrate
US-10553426-B2 · Feb 4, 2020 · US
Method making it possible to obtain a semi-polar nitride layer on a crystalline substrate
US-2019081204-A1 · Mar 14, 2019 · US
Method for obtaining a semi-polar nitride layer on a crystalline substrate
US-2018330941-A1 · Nov 15, 2018 · US
Optoelectronic device with three-dimensional semiconductor elements
US-2018233610-A1 · Aug 16, 2018 · US
Method making it possible to obtain on a crystalline substrate a semi-polar layer of nitride obtained with at least one of the following materials: gallium (ga), indium (in) and aluminium (al)
US-2018182622-A1 · Jun 28, 2018 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Commissariat Energie Atomique | 19 |
| Centre Nat Rech Scient | 17 |
| Univ Grenoble Alpes | 4 |
| Aledia | 2 |
| Inst Polytechnique Grenoble | 1 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10H20/01335 | 18 |
| H10H20/825 | 11 |
| C30B29/403 | 10 |
| H10P14/3216 | 10 |
| H10P14/2905 | 10 |