Semiconductor device including a repeater/buffer at upper metal routing layers and methods of manufacturing the same
US-11404405-B2 · Aug 2, 2022 · US
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Bowen Chris patents
Bowen Chris is listed as an inventor on 17 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Bowen Chris |
| Total patents | 17 |
| First publication | Feb 16, 2016 |
| Latest publication | Aug 2, 2022 |
Notable patents
Publications ranked by popularity score, then publication date.
Method of screening materials using forward conducting modes
US-11087055-B2 · Aug 10, 2021 · US
Semiconductor device including a repeater/buffer at upper metal routing layers and methods of manufacturing the same
US-2020381414-A1 · Dec 3, 2020 · US
Semiconductor device including a repeater/buffer at upper metal routing layers and methods of manufacturing the same
US-10854591-B2 · Dec 1, 2020 · US
Low-k dielectric pore sealant and metal-diffusion barrier formed by doping and method for forming the same
US-10510665-B2 · Dec 17, 2019 · US
Method of screening materials using forward conducting modes
US-2019155977-A1 · May 23, 2019 · US
Unipolar complementary logic
US-10153368-B2 · Dec 11, 2018 · US
Unipolar complementary logic
US-2018254350-A1 · Sep 6, 2018 · US
Semiconductor device including a repeater/buffer at upper metal routing layers and methods of manufacturing the same
US-2018130785-A1 · May 10, 2018 · US
Sacrificial non-epitaxial gate stressors
US-9893187-B2 · Feb 13, 2018 · US
Recent patents
Latest publications not already listed above.
Sacrificial non-epitaxial gate stressors
US-2017345932-A1 · Nov 30, 2017 · US
Vertical field effect transistor with biaxial stressor layer
US-9773904-B2 · Sep 26, 2017 · US
Metal oxysilicate diffusion barriers for damascene metallization with low RC delays and methods for forming the same
US-9728502-B2 · Aug 8, 2017 · US
Vertical Field Effect Transistor with Biaxial Stressor Layer
US-2017077304-A1 · Mar 16, 2017 · US
Low-k dielectric pore sealant and metal-diffusion barrier formed by doping and method for forming the same
US-2016148870-A1 · May 26, 2016 · US
Metal oxysilicate diffusion barriers for damascene metallization with low rc delays and methods for forming the same
US-2016133513-A1 · May 12, 2016 · US
Fin-FET transistor with punchthrough barrier and leakage protection regions
US-9263549-B2 · Feb 16, 2016 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Samsung Electronics Co Ltd | 17 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10W20/43 | 6 |
| H01L23/528 | 6 |
| H10D84/038 | 6 |
| H10D30/021 | 6 |
| H01L21/76802 | 6 |