Method for manufacturing a composite structure comprising a thin layer made of monocrystalline sic on a carrier substrate made of SiC
US-12159781-B2 · Dec 3, 2024 · US
by reclaiming or re-processing
by reclaiming or re-processing · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10P90/16 |
| Official title | {by reclaiming or re-processing} |
| Display label | by reclaiming or re-processing |
| Total patents | 71 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is declining.
| Year | Patents |
|---|---|
| 2015 | 5 |
| 2016 | 6 |
| 2017 | 2 |
| 2018 | 5 |
| 2019 | 7 |
| 2020 | 5 |
| 2021 | 9 |
| 2022 | 7 |
| 2023 | 12 |
| 2024 | 6 |
| 2025 | 5 |
| 2026 | 2 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Wafer processing system and rework method thereof
US-11971365-B2 · Apr 30, 2024 · US
Fully automated wafer debonding system and method thereof
US-2023282494-A1 · Sep 7, 2023 · US
Large-diameter substrate for group-iii nitride epitaxial growth and method for producing the same
US-2023257905-A1 · Aug 17, 2023 · US
Method of manufacturing gallium nitride substrate
US-2023238281-A1 · Jul 27, 2023 · US
Method for washing aluminum nitride single crystal substrate, method for producing aluminum nitride single crystal layered body, and method for producing aluminum nitride single crystal substrate, and aluminum nitride single crystal substrate
US-2023227997-A1 · Jul 20, 2023 · US
Method for manufacturing a semiconductor-on-insulator substrate for radiofrequency applications
US-2023207382-A1 · Jun 29, 2023 · US
Semiconductor device and method of manufacturing the same
US-2023197442-A1 · Jun 22, 2023 · US
Method for manufacturing a composite structure comprising a thin layer made of monocrystalline sic on a carrier substrate made of sic
US-2023197435-A1 · Jun 22, 2023 · US
Fully automated wafer debonding system and method thereof
US-11670524-B2 · Jun 6, 2023 · US
Semiconductor substrate crack mitigation systems and related methods
US-11652010-B2 · May 16, 2023 · US
Manufacturing and reuse of semiconductor substrates
US-2023127556-A1 · Apr 27, 2023 · US
Method for preparing the remainder of a donor substrate, substrate produced by said method, and use of such a substrate
US-2023073003-A1 · Mar 9, 2023 · US
Method for preparing the remainder of a donor substrate, substrate produced by said method, and use of such a substrate
US-11542155-B2 · Jan 3, 2023 · US
Method for manufacturing a composite structure comprising a thin layer of monocrystalline sic on an sic carrier substrate
US-2022415653-A1 · Dec 29, 2022 · US
Method of manufacturing sic semiconductor device and sic semiconductor device
US-2022375749-A1 · Nov 24, 2022 · US
Wafer processing system and rework method thereof
US-2022326162-A1 · Oct 13, 2022 · US
Method for manufacturing a composite structure comprising a thin layer of monocrystalline sic on a carrier substrate of polycrystalline sic
US-2022270875-A1 · Aug 25, 2022 · US
Semiconductor substrate singulation systems and related methods
US-11373859-B2 · Jun 28, 2022 · US
Methods of exfoliating single crystal materials
US-11302531-B2 · Apr 12, 2022 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10P90/16?
- CPC H10P90/16 is the Cooperative Patent Classification code for “by reclaiming or re-processing.”
- How many patents are filed under CPC H10P90/16 (by reclaiming or re-processing)?
- Our database includes 71 publications tagged with this CPC code.
- Is patent activity under CPC H10P90/16 growing?
- Publication counts under this code: 6 in 2024 vs 5 in 2025 (latest complete years).