Method for preparing the remainder of a donor substrate, substrate produced by said method, and use of such a substrate

Patent metadata

Field	Value
Publication number	US-11542155-B2
Application number	US-201816770013-A
Country	US
Kind code	B2
Filing date	Nov 21, 2018
Priority date	Dec 5, 2017
Publication date	Jan 3, 2023
Grant date	Jan 3, 2023

Abstract

A method is used to prepare the remainder of a donor substrate, from which a layer has been removed by delamination in a plane weakened by ion implantation. The remainder comprises, on a main face, an annular step corresponding to a non-removed part of the donor substrate. The method comprises the deposition of a smoothing oxide on the main face of the remainder in order to fill the inner space defined by the annular step and to cover at least part of the annular step, as well as heat treatment for densification of the smoothing oxide. A substrate is produced by the method, and the substrate may be used in subsequent processes.

First claim

The invention claimed is:

1. A method for preparing a remainder of a donor substrate comprising:
removing a layer from the donor substrate by delamination in a plane weakened by ion implantation, the remainder of the donor substrate including an annular step on a main face of the donor substrate, the annular step corresponding to a non-removed part of the donor substrate;
depositing a smoothing oxide on the main face of the remainder of the donor substrate and filling an inner space defined by the annular step with the smoothing oxide and covering at least part of the annular step with the smoothing oxide; and
then heat treating and densifying the smoothing oxide.

2. The method of claim 1 , wherein the smoothing oxide comprises a spin-on glass.

3. The method of claim 2 , wherein the heat treatment is performed at a temperature of between 225° C. and 900° C.

4. The method of claim 3 , wherein the heat treatment is carried out in a nitrogen atmosphere.

5. The method of claim 4 , wherein depositing the smoothing oxide comprises forming a layer having a thickness at least equal to one and a half times a height of the annular step.

6. The method of claim 5 , further comprising, before depositing the smoothing oxide, removing a peripheral zone of the main surface damaged by ion implantation.

Assignees

• Soitec Silicon On Insulator

Inventors

• Drazek Charlotte
• Belhachemi Djamel

Classifications

• H10W10/181

  Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers · CPC title

• H10P90/1924

  with separation/delamination along a porous layer · CPC title

• H10P90/1916 Primary

  with separation or delamination along an ion implanted layer, e.g. Smart-cut · CPC title

• H10P90/128

  by edge treatment, e.g. chamfering · CPC title

• B81C1/00357 Primary

  involving bonding one or several substrates on a non-temporary support, e.g. another substrate · CPC title