Integrated cluster tool for selective area deposition
US-2017350004-A1 · Dec 7, 2017 · US
of treatments performed before formation of the materials
of treatments performed before formation of the materials · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10P14/6502 |
| Official title | {of treatments performed before formation of the materials} |
| Display label | of treatments performed before formation of the materials |
| Total patents | 229 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is stable.
| Year | Patents |
|---|---|
| 2015 | 17 |
| 2016 | 21 |
| 2017 | 33 |
| 2018 | 18 |
| 2019 | 18 |
| 2020 | 19 |
| 2021 | 17 |
| 2022 | 22 |
| 2023 | 21 |
| 2024 | 19 |
| 2025 | 20 |
| 2026 | 4 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Modulation of the morphology of epitaxial semiconductor material
US-2017345719-A1 · Nov 30, 2017 · US
Method for coating a substrate
US-9799554-B2 · Oct 24, 2017 · US
Self-limiting and saturating chemical vapor deposition of a silicon bilayer and ALD
US-9773663-B2 · Sep 26, 2017 · US
ROBUST HIGH PERFORMANCE LOW HYDROGEN SILICON CARBON NITRIDE (SiCNH) DIELECTRICS FOR NANO ELECTRONIC DEVICES
US-2017263449-A1 · Sep 14, 2017 · US
ROBUST HIGH PERFORMANCE LOW HYDROGEN SILICON CARBON NITRIDE (SiCNH) DIELECTRICS FOR NANO ELECTRONIC DEVICES
US-2017263451-A1 · Sep 14, 2017 · US
Robust high performance low hydrogen silicon carbon nitride (SiCNH) dielectrics for nano electronic devices
US-9735005-B1 · Aug 15, 2017 · US
Method of manufacturing semiconductor device
US-2017213731-A1 · Jul 27, 2017 · US
Layer deposition on III-V semiconductors
US-9685322-B2 · Jun 20, 2017 · US
Differential etch of metal oxide blocking dielectric layer for three-dimensional memory devices
US-2017162597-A1 · Jun 8, 2017 · US
Dislocation SMT For FinFet Device
US-2017154979-A1 · Jun 1, 2017 · US
Techniques for filling a structure using selective surface modification
US-2017140983-A1 · May 18, 2017 · US
Treatment Process and System
US-2017140930-A1 · May 18, 2017 · US
Hydrogen-free silicon-based deposited dielectric films for nano device fabrication
US-9607825-B2 · Mar 28, 2017 · US
SOI based FINFET with strained source-drain regions
US-9601624-B2 · Mar 21, 2017 · US
Na dosing control method
US-9601653-B2 · Mar 21, 2017 · US
Dislocation stress memorization technique for FinFET device
US-9570587-B2 · Feb 14, 2017 · US
Non-lithographically patterned directed self assembly alignment promotion layers
US-9570349-B2 · Feb 14, 2017 · US
Substrate processing apparatus, substrate processing method and substrate processing program
US-2017040177-A1 · Feb 9, 2017 · US
Self-limiting and saturating chemical vapor deposition of a silicon bilayer and ald
US-2017040159-A1 · Feb 9, 2017 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10P14/6502?
- CPC H10P14/6502 is the Cooperative Patent Classification code for “of treatments performed before formation of the materials.”
- How many patents are filed under CPC H10P14/6502 (of treatments performed before formation of the materials)?
- Our database includes 229 publications tagged with this CPC code.
- Is patent activity under CPC H10P14/6502 growing?
- Publication counts under this code: 19 in 2024 vs 20 in 2025 (latest complete years).